发明授权
US5384279A Method of manufacturing a semiconductor device comprising a silicon body
in which semiconductor regions are formed by ion implantations
失效
制造半导体器件的方法，该半导体器件包括通过离子注入形成半导体区域的硅体
- 专利标题： Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations
- 专利标题（中）： 制造半导体器件的方法，该半导体器件包括通过离子注入形成半导体区域的硅体
-
申请号： US144091申请日： 1993-10-27
-
公开(公告)号： US5384279A公开(公告)日： 1995-01-24
- 发明人: Andre Stolmeijer , Paulus M. T. M. Van Attekum , Hubertus Den Blanken , Paulus A. Van Der Plas , Reinier De Werdt
- 申请人： Andre Stolmeijer , Paulus M. T. M. Van Attekum , Hubertus Den Blanken , Paulus A. Van Der Plas , Reinier De Werdt
- 申请人地址： NY New York
- 专利权人： U.S. Philips Corporation
- 当前专利权人： U.S. Philips Corporation
- 当前专利权人地址： NY New York
- 优先权： NLX8802219 19880909
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/8238 ; H01L27/092 ; H01L21/70
摘要：
A method of manufacturing a semiconductor device is set forth, comprising a silicon body (1) having a surface (4) where there are situated a number of semiconductor regions (5, 6) and field oxide regions (7). The semiconductor regions is formed, after the field oxide regions have been provided, by implantations of n-type and p-type dopants. In accordance with the invention the implantations with the n-type dopant (10, 11, 14), which are performed using an implantation mask (8) provided on the surface and comprising openings (9) at the area of a part of the semiconductor regions (5) to be formed, are combined with the implantations with the p-type dopant (12, 13, 15) which are carried out without using the implantation mask. Thus, the semiconductor regions (5, 6) are realised by means of a single implantation mask (8).
公开/授权文献
- US4823940A Flat article conveyor 公开/授权日：1989-04-25