发明授权
- 专利标题： Sealed self aligned contact process
- 专利标题（中）： 密封自对准接触过程
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申请号： US43569申请日： 1993-04-07
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公开(公告)号： US5385634A公开(公告)日： 1995-01-31
- 发明人: Douglas Butler , E. Henry Stevens , Richard A. Bailey , Thomas C. Taylor
- 申请人： Douglas Butler , E. Henry Stevens , Richard A. Bailey , Thomas C. Taylor
- 申请人地址： CO Colorado Springs JPX Chiba
- 专利权人： Ramtron International Corporation,Nippon Steel Semiconductor Corporation
- 当前专利权人： Ramtron International Corporation,Nippon Steel Semiconductor Corporation
- 当前专利权人地址： CO Colorado Springs JPX Chiba
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/3213 ; H01L21/336 ; H01L21/60 ; H01L21/768 ; H01L23/485 ; H01L29/78 ; H01L21/00
摘要：
In fabricating a contact window to source/drain electrode next to a gate electrode of an integrated circuit: (1) establishing a structure with a window over the source/drain region next to the gate electrode; (2) establishing a region of titanium silicide over the source/drain electrode and establishing a titanium nitride layer over the window and gate electrode; (3) establishing a layer of silicon nitride over the titanium nitride layer; (4) patterning the silicon nitride layer; (5) using the patterned silicon nitride layer as a mask to pattern the titanium nitride layer; (6) adding another silicon nitride layer to seal the gate electrode where it is not protected by titanium nitride; (7) opening a window over the electrode by an anisotropic etch; (8) widening the window with an isotropic etch, using the silicon nitride and titanium nitride as a protective barrier; and (9) adding contact material in said windows.
公开/授权文献
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