Sealed self aligned contact process
    1.
    发明授权
    Sealed self aligned contact process 失效
    密封自对准接触过程

    公开(公告)号:US5385634A

    公开(公告)日:1995-01-31

    申请号:US43569

    申请日:1993-04-07

    摘要: In fabricating a contact window to source/drain electrode next to a gate electrode of an integrated circuit: (1) establishing a structure with a window over the source/drain region next to the gate electrode; (2) establishing a region of titanium silicide over the source/drain electrode and establishing a titanium nitride layer over the window and gate electrode; (3) establishing a layer of silicon nitride over the titanium nitride layer; (4) patterning the silicon nitride layer; (5) using the patterned silicon nitride layer as a mask to pattern the titanium nitride layer; (6) adding another silicon nitride layer to seal the gate electrode where it is not protected by titanium nitride; (7) opening a window over the electrode by an anisotropic etch; (8) widening the window with an isotropic etch, using the silicon nitride and titanium nitride as a protective barrier; and (9) adding contact material in said windows.

    摘要翻译: 在制造与集成电路的栅电极相邻的源极/漏电极的接触窗口时:(1)在栅电极旁边的源极/漏极区域上建立具有窗口的结构; (2)在源/漏电极上建立硅化钛区域,并在窗口和栅电极上建立氮化钛层; (3)在氮化钛层上建立氮化硅层; (4)构图氮化硅层; (5)使用图案化氮化硅层作为掩模来图案化氮化钛层; (6)添加另一个氮化硅层以密封其不受氮化钛保护的栅电极; (7)通过各向异性蚀刻在电极上打开窗口; (8)使用氮化硅和氮化钛作为保护屏障,用各向同性蚀刻来加宽窗口; 和(9)在所述窗口中添加接触材料。

    Process for fabricating transistors using composite nitride structure
    2.
    发明授权
    Process for fabricating transistors using composite nitride structure 失效
    使用复合氮化物结构制造晶体管的工艺

    公开(公告)号:US5610099A

    公开(公告)日:1997-03-11

    申请号:US267278

    申请日:1994-06-28

    CPC分类号: H01L29/6659 H01L21/28518

    摘要: In fabricating a source/drain electrode of an integrated circuit transistor and a contact window for it: (1) establishing a structure with a window over the source/drain region next to a gate electrode and isolation structure; (2) establishing a dielectric layer covering the isolation structure, the window, and gate electrode; (3) implanting a moderate concentration of impurities into the source/drain region through said dielectric layer so that the moderate concentration region extends partially under the gate electrode; (4) removing the horizontal portions of the dielectric layer with an anisotropic etch thereby leaving the dielectric on vertical side walls; (5) establishing a region of titanium silicide over the moderately dosed source/drain region and establishing a titanium nitride layer over the isolation structure, windows, and gate electrode; (6) establishing a layer of silicon nitride over the titanium nitride layer; (7) implanting the substrate with a relatively heavier dose of ions through the silicon nitride, titanium nitride, and titanium silicide layers to create a heavier concentration source/drain region intersecting said moderate concentration region, where the heavy concentration region does not underlie the gate electrode; (8) patterning the silicon nitride layer; (9) using the patterned silicon nitride layer as a mask to pattern the titanium nitride layer; (10) adding thick interlevel dielectric over the patterned nitride layers; (11) opening windows over the electrodes; and (12) adding contact material in said windows.

    摘要翻译: 在制造集成电路晶体管的源极/漏极电极及其接触窗口时:(1)在栅极电极和隔离结构旁边的源极/漏极区域上建立具有窗口的结构; (2)建立覆盖隔离结构,窗口和栅电极的电介质层; (3)通过所述电介质层将中等浓度的杂质注入源极/漏极区域,使得中等浓度区域部分地延伸到栅电极下方; (4)用各向异性蚀刻去除电介质层的水平部分,从而将电介质留在垂直侧壁上; (5)在中等剂量的源极/漏极区域上建立硅化钛区域,并在隔离结构,窗口和栅电极上建立氮化钛层; (6)在氮化钛层上建立氮化硅层; (7)通过氮化硅,氮化钛和硅化钛层将相对较重剂量的离子注入衬底以产生与所述中等浓度区域相交的较重的浓度源/漏区,其中重浓度区域不位于栅极 电极; (8)构图氮化硅层; (9)使用图案化的氮化硅层作为掩模来图案化氮化钛层; (10)在图案化的氮化物层上添加厚的层间电介质; (11)在电极上打开窗户; 和(12)在所述窗口中添加接触材料。

    SYSTEM FOR USE OF EXTERNAL SECONDARY PAYLOADS
    3.
    发明申请
    SYSTEM FOR USE OF EXTERNAL SECONDARY PAYLOADS 审中-公开
    使用外部二次付费的系统

    公开(公告)号:US20090127399A1

    公开(公告)日:2009-05-21

    申请号:US11955612

    申请日:2007-12-13

    IPC分类号: B64G1/62 B64G1/00 B64G1/40

    摘要: An experiment system with six different re-entry experiment locations for testing high temperature re-entry materials, creating new thermal protection systems, proving innovative new concepts for spacecraft exterior surfaces and the incremental development of next generation aerospace materials. A commercial transportation system to and from orbit provides a 24-hour return cycle for the experiments on a surface actually re-entering the earth's atmosphere. Now using existing doors, hatches and other points on the reusable launch vehicle's exterior, the actual re-entry environment is experienced by test specimens with quick turn around for a wide variety of different re-entry temperatures ranges for broad testing and development purposes. The reusable launch vehicle launches, remains in orbit for 24 hours and returns to provide an actual test environment for the exterior experiment system.

    摘要翻译: 具有六个不同重新进入实验位置的实验系统,用于测试高温重入物料,创建新的热保护系统,为航天器外表面提供创新的新概念,以及下一代航空材料的增量开发。 往返轨道的商业运输系统为实际重新进入地球大气层的表面提供了24小时的循环。 现在在可重复使用的运载火箭的外部使用现有的门,舱口和其他点,实际的重入环境经历了快速转弯的各种不同的重新进入温度范围,用于广泛的测试和开发目的。 可重复使用的运载火箭发射,保持在轨道上24小时,并返回,为外部实验系统提供实际的测试环境。

    Inflatable habitation volumes in space
    4.
    发明授权
    Inflatable habitation volumes in space 有权
    空间充气居住体积

    公开(公告)号:US06439508B1

    公开(公告)日:2002-08-27

    申请号:US09686145

    申请日:2000-10-10

    申请人: Thomas C. Taylor

    发明人: Thomas C. Taylor

    IPC分类号: B64G110

    摘要: An improved inflatable habitation volume in space comprising reduced cost, improved debris impact protection, enhanced penetration resistance, self sealing qualities, innovative flat end caps, industry accepted commercial design/manufacturing techniques, enhanced inflatable assembly techniques and expanded interior volume. Costs are reduced by compressing the launch package, removing the three gravity launch load requirements from the transportation process and inflating in microgravity. The inflatable habitation volume unit can be connected to either existing orbital facilities or connected to similar units to create expanded volumes and space tourist torus structures rotated for partial gravity.

    摘要翻译: 空间中的改善的充气居住体积包括降低的成本,改进的碎片冲击保护,增强的穿透阻力,自密封性质,创新的扁平端盖,业界公认的商业设计/制造技术,增强的充气组装技术和扩大的内部容积。 通过压缩发射包降低成本,消除运输过程中的三个重力发射载荷要求,并在微重力中膨胀。 可充气居住体积单元可以连接到现有的轨道设施或连接到类似的单元,以产生扩展的体积和空间的旅游环形结构旋转以进行部分重力。

    Flat end cap module for space transportation systems
    6.
    发明授权
    Flat end cap module for space transportation systems 失效
    用于空间运输系统的平端盖模块

    公开(公告)号:US4867395A

    公开(公告)日:1989-09-19

    申请号:US858739

    申请日:1986-05-01

    IPC分类号: B64G1/12 B64G1/14

    CPC分类号: B64G1/14 B64G1/12

    摘要: A module incorporating at least one flat end cap is positioned within the payload of the Space Shuttle or other space vehicle to enhance the capabilities of the payload area. The flat end cap reduces the required volume in the launch vehicle to be occupied by the module and provides for efficient use of the interior space of the Space Shuttle by providing more flat surfaces to which necessary equipment can be fastened. The module is truncated, thus adding another flat surface, i.e., a ceiling, to the interior of the vehicle. The truncated top of the module is capable of separate integration and carries additional experiments within racks which can be attached to its interior surface. The module can be fabricated from aluminum members in an aircraft type fashion of construction, or can be assembled from existing or modified Space Lab hardware. The module provides a full scope of services within its pressurized interior and will enhance the carrying capability of the shuttle with respect to handling both personnel and cargo.

    Flat valve for orbital applications
    7.
    发明授权
    Flat valve for orbital applications 有权
    用于轨道应用的扁平阀

    公开(公告)号:US07562670B1

    公开(公告)日:2009-07-21

    申请号:US11412786

    申请日:2006-04-28

    IPC分类号: F16K17/40

    摘要: A thin diaphragm valve includes a base plate attached to a valve attach plate. A diaphragm is positioned between the plates to move between open and closed positions. A spring can be provided between the diaphragm and a sealing flange of a pipe. Because no sliding friction occurs between sealing surfaces, wear is reduced and leakage is also reduced. A pierceable membrane can also be added to provide additional security.

    摘要翻译: 薄隔膜阀包括附接到阀附接板的基板。 隔板位于板之间,以在打开和关闭位置之间移动。 可以在隔膜和管道的密封凸缘之间设置弹簧。 由于密封面之间不产生滑动摩擦,所以磨损减少,泄漏也减少。 也可以添加可刺破的膜以提供额外的安全性。

    Space transportation node including tether system
    8.
    发明授权
    Space transportation node including tether system 有权
    空间运输节点包括系绳系统

    公开(公告)号:US07503526B1

    公开(公告)日:2009-03-17

    申请号:US11232932

    申请日:2005-09-23

    IPC分类号: B64G1/28

    摘要: A transportation node system orbits a celestial body. The node system includes a truss having two ends, the truss rotating around its center of mass while orbiting the celestial body. The truss stores payloads. The node system also includes tether tips, each attached to one end of the truss via a tether so that each tether tip can extend from the truss and retract to the truss for transfer of payloads. The tether runs through the length of the truss and connects to each tether tip, each tether tip being capable of engaging payloads. The node further includes at least one tether cable reel that reels in and reels out the tether so the tether tips can extend from and retract to the truss.

    摘要翻译: 运输节点系统绕着天体。 节点系统包括具有两端的桁架,桁架围绕其中心旋转,同时绕着天体转动。 桁架存储有效载荷。 节点系统还包括系绳末端,每个系绳尖通过系绳连接到桁架的一端,使得每个系绳尖端可以从桁架延伸并缩回到桁架以传送有效载荷。 系绳穿过桁架的长度并连接到每个系绳尖端,每个系绳尖端能够接合有效载荷。 节点还包括至少一个系绳电缆卷轴,其卷绕并卷出系绳,使得系绳尖端可以从桁架延伸并缩回到桁架。

    Fabrication of metal-ferroelectric-metal capacitors with a two step
patterning sequence
    10.
    发明授权
    Fabrication of metal-ferroelectric-metal capacitors with a two step patterning sequence 失效
    金属 - 铁电 - 金属电容器的制造,具有两步图案化顺序

    公开(公告)号:US5789323A

    公开(公告)日:1998-08-04

    申请号:US428544

    申请日:1995-04-25

    申请人: Thomas C. Taylor

    发明人: Thomas C. Taylor

    IPC分类号: H01L21/02 H01L21/302

    CPC分类号: H01L28/60

    摘要: A method of fabricating a metal-ferroelectric-metal ("MFM") capacitor includes the steps of depositing a silicon dioxide layer on a silicon or other substrate, a lower platinum or other noble metal electrode, a PZT or other ferroelectric material dielectric layer, and an upper platinum or other noble metal electrode. The upper electrode and ferroelectric dielectric layer are patterned and etched according to a first pattern corresponding to the final dimensions of the ferroelectric dielectric layer. The upper electrode and lower electrode are subsequently patterned and etched according to a second pattern corresponding to the final dimensions of one or more upper electrodes and the final extent of the lower electrode. The second etching step leaves a benign vestigial upper electrode feature. An oxide layer is finally deposited over the entire surface of the MFM capacitor structure, which is etched and metalized over desired upper and lower electrode contacts.

    摘要翻译: 制造金属 - 铁电体(“MFM”)电容器的方法包括以下步骤:在硅或其它基底,下部铂金或其它贵金属电极,PZT或其它铁电材料电介质层上沉积二氧化硅层, 和上铂金或其他贵金属电极。 根据对应于铁电介质层的最终尺寸的第一图案,对上电极和铁电介质层进行图案化和蚀刻。 随后根据对应于一个或多个上电极的最终尺寸和下电极的最终尺寸的第二图案对上电极和下电极进行图案化和蚀刻。 第二蚀刻步骤留下良性残留的上电极特征。 氧化层最终沉积在MFM电容器结构的整个表面上,该MFM电容器结构在所需的上部和下部电极触点上被蚀刻和金属化。