发明授权
- 专利标题： Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
- 专利标题（中）： 通过具有平行于表面的2D电荷载体层的起始结构产生有源半导体结构的方法
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申请号： US724426申请日： 1991-07-03
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公开(公告)号： US5385865A公开(公告)日： 1995-01-31
- 发明人: Johannes Nieder , Peter Grambow , Herbert Lage , Klaus Ploog , Andreas Wieck , Detlef Heitmann , Klaus Von Klitzing
- 申请人： Johannes Nieder , Peter Grambow , Herbert Lage , Klaus Ploog , Andreas Wieck , Detlef Heitmann , Klaus Von Klitzing
- 申请人地址： DEX Gottingen
- 专利权人： Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften
- 当前专利权人： Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften
- 当前专利权人地址： DEX Gottingen
- 优先权： EPX90112970 19900706
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L21/8252 ; H01L27/06 ; H01L29/775 ; H01L21/306
摘要：
A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.
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