公开(公告)号：US5385865A

公开(公告)日：1995-01-31

申请号：US724426

申请日：1991-07-03

申请人： Johannes Nieder ,  Peter Grambow ,  Herbert Lage ,  Klaus Ploog ,  Andreas Wieck ,  Detlef Heitmann ,  Klaus Von Klitzing

发明人： Johannes Nieder ,  Peter Grambow ,  Herbert Lage ,  Klaus Ploog ,  Andreas Wieck ,  Detlef Heitmann ,  Klaus Von Klitzing

IPC分类号： H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/775 ,  H01L21/306

CPC分类号： B82Y10/00 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66469 ,  H01L29/775 ,  Y10S438/91

摘要： A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.

摘要翻译： 从调制掺杂AlGaAS / GaAs异质结构中的二维电子系统（2DES）开始实现了一种新型的单极晶体管器件。 600纳米宽的1D通道与2DES方案横向隔离700纳米宽的深台面蚀刻沟槽。 准一维通道中的电导率可以通过相邻2DES栅极的面内横向场效应进行调节，其中蚀刻沟槽中的真空（或空气）用作电介质。 证明室温操作产生对应于160mS / mm 2D跨导的161S跨导。

公开(公告)号：US06987484B2

公开(公告)日：2006-01-17

申请号：US10704379

申请日：2003-11-07

申请人： Klaus Von Klitzing ,  Sergey Anatolievich Mikhailov ,  Jurgen Hubert Irma Smet ,  Igor Vladimirovich Kukushkin

发明人： Klaus Von Klitzing ,  Sergey Anatolievich Mikhailov ,  Jurgen Hubert Irma Smet ,  Igor Vladimirovich Kukushkin

IPC分类号： H01Q1/26

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/1035

摘要： A detector for detecting electromagnetic radiation, especially for electromagnetic radiation in the GHz or THz range. The detector comprises a semiconductor structure having a 2D charge carrier layer or a quasi 2D charge carrier layer with an edge, at least first and second contacts to said charge carrier layer, said contacts being provided at said edge and being spaced apart by a distance, and a device for measuring at least one of the photocurrent between said first and second contacts, the photovoltage between said first and second contacts and the resistance between said first and second contacts. A device is provided for applying a magnetic field to said detector with a field component perpendicular to said charge carrier layer. An output signal of said measuring device provides information about at least one of the presence of electromagnetic radiation, the intensity of the incident electromagnetic radiation and the frequency of the incident electromagnetic radiation.

摘要翻译： 用于检测电磁辐射的检测器，特别是用于GHz或THz范围内的电磁辐射。 检测器包括具有2D电荷载体层或具有边缘的准2D电荷载体层的半导体结构，至少第一和第二触点到所述电荷载体层，所述触点设置在所述边缘处并且间隔一定距离， 以及用于测量所述第一和第二触点之间的光电流中的至少一个的电流，所述第一和第二触点之间的光电压以及所述第一和第二触点之间的电阻。 提供了一种用于向垂直于所述电荷载体层的场分量向所述检测器施加磁场的装置。 所述测量装置的输出信号提供关于电磁辐射的存在，入射电磁辐射的强度和入射的电磁辐射的频率中的至少一个的信息。