公开(公告)号：US5385865A

公开(公告)日：1995-01-31

申请号：US724426

申请日：1991-07-03

申请人： Johannes Nieder ,  Peter Grambow ,  Herbert Lage ,  Klaus Ploog ,  Andreas Wieck ,  Detlef Heitmann ,  Klaus Von Klitzing

发明人： Johannes Nieder ,  Peter Grambow ,  Herbert Lage ,  Klaus Ploog ,  Andreas Wieck ,  Detlef Heitmann ,  Klaus Von Klitzing

IPC分类号： H01L21/335 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/775 ,  H01L21/306

CPC分类号： B82Y10/00 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66469 ,  H01L29/775 ,  Y10S438/91

摘要： A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.

摘要翻译： 从调制掺杂AlGaAS / GaAs异质结构中的二维电子系统（2DES）开始实现了一种新型的单极晶体管器件。 600纳米宽的1D通道与2DES方案横向隔离700纳米宽的深台面蚀刻沟槽。 准一维通道中的电导率可以通过相邻2DES栅极的面内横向场效应进行调节，其中蚀刻沟槽中的真空（或空气）用作电介质。 证明室温操作产生对应于160mS / mm 2D跨导的161S跨导。