Invention Grant
- Patent Title: Low temperature ternary C4 flip chip bonding method
- Patent Title (中): 低温三元C4倒装芯片接合方法
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Application No.: US229883Application Date: 1994-04-19
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Publication No.: US5391514APublication Date: 1995-02-21
- Inventor: Thomas P. Gall , Anthony P. Ingraham
- Applicant: Thomas P. Gall , Anthony P. Ingraham
- Applicant Address: NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: NY Armonk
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L21/28 ; H01L21/58
Abstract:
A method of flip chip bonding an integrated circuit chip to a chip carrier. A high melting temperature composition, such as a binary Pb/Sn alloy, is deposited on contacts on, for example, the chip, and constituents of a low melting composition, such as Bi and Sn, are codeposited on contacts on, for example, the chip carrier. The chip and chip carrier are then heated. This causes the lower melting temperature composition, for example the Bi and Sn, to melt and form a low melting temperature alloy, such as a Bi/Sn alloy. The low melting alloy dissolves the higher melting composition, as Pb/Sn. This results in the formation of a solder bond of a low melting point third composition, such as a ternary alloy of Bi/Pb/Sn.
Public/Granted literature
- US5006505A Peltier cooling stage utilizing a superconductor-semiconductor junction Public/Granted day:1991-04-09
Information query
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