发明授权
- 专利标题： Low temperature ternary C4 flip chip bonding method
- 专利标题（中）： 低温三元C4倒装芯片接合方法
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申请号： US229883申请日： 1994-04-19
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公开(公告)号： US5391514A公开(公告)日： 1995-02-21
- 发明人: Thomas P. Gall , Anthony P. Ingraham
- 申请人： Thomas P. Gall , Anthony P. Ingraham
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/28 ; H01L21/58
摘要：
A method of flip chip bonding an integrated circuit chip to a chip carrier. A high melting temperature composition, such as a binary Pb/Sn alloy, is deposited on contacts on, for example, the chip, and constituents of a low melting composition, such as Bi and Sn, are codeposited on contacts on, for example, the chip carrier. The chip and chip carrier are then heated. This causes the lower melting temperature composition, for example the Bi and Sn, to melt and form a low melting temperature alloy, such as a Bi/Sn alloy. The low melting alloy dissolves the higher melting composition, as Pb/Sn. This results in the formation of a solder bond of a low melting point third composition, such as a ternary alloy of Bi/Pb/Sn.
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