发明授权
- 专利标题: Circuit for generating substrate voltage and pumped-up voltage with a single oscillator
- 专利标题(中): 用单个振荡器产生衬底电压和抽吸电压的电路
-
申请号: US997302申请日: 1992-12-23
-
公开(公告)号: US5396114A公开(公告)日: 1995-03-07
- 发明人: Jae-Heong Lee , Dong-Jae Lee
- 申请人: Jae-Heong Lee , Dong-Jae Lee
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX1991-23944 19911223
- 主分类号: G11C11/407
- IPC分类号: G11C11/407 ; G05F3/20 ; G11C5/14 ; G11C11/4074 ; H01L21/822 ; H01L27/04 ; H02M3/07 ; H03K19/096 ; H03L5/00 ; H03K3/354
摘要:
A constant voltage generator having a substrate voltage pumping circuit, a voltage pumping circuit and a single oscillator for generating pulses to which the substrate voltage pumping circuit and the voltage pumping circuit are commonly responsive, reducing current consumption of a semiconductor memory device during a stand-by state thereof.
公开/授权文献
信息查询
IPC分类: