发明授权
- 专利标题: Detector circuit for testing semiconductor memory device
- 专利标题(中): 用于测试半导体存储器件的检测电路
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申请号: US914744申请日: 1992-07-17
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公开(公告)号: US5400282A公开(公告)日: 1995-03-21
- 发明人: Youichi Suzuki , Makoto Segawa , Toshiaki Ohno , Sumako Shiraishi
- 申请人: Youichi Suzuki , Makoto Segawa , Toshiaki Ohno , Sumako Shiraishi
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX3-177012 19910717
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G01R31/28 ; G11C11/413 ; G11C29/06 ; G11C29/34
摘要:
A semiconductor memory device having a normal mode of reading and writing data from and to a selected memory cell of a memory cell array. The semiconductor memory device is characterized by control means for switching the normal operation mode to a test mode in response to a test mode signal applied to a certain input terminal, selecting all desired memory cells of the memory cell array at a time, and allowing data applied to a data input terminal to be written to all the selected and desired memory cells at one time.
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