公开(公告)号：US5400282A

公开(公告)日：1995-03-21

申请号：US914744

申请日：1992-07-17

申请人： Youichi Suzuki ,  Makoto Segawa ,  Toshiaki Ohno ,  Sumako Shiraishi

发明人： Youichi Suzuki ,  Makoto Segawa ,  Toshiaki Ohno ,  Sumako Shiraishi

IPC分类号： G11C29/00 ,  G01R31/28 ,  G11C11/413 ,  G11C29/06 ,  G11C29/34

CPC分类号： G11C29/34

摘要： A semiconductor memory device having a normal mode of reading and writing data from and to a selected memory cell of a memory cell array. The semiconductor memory device is characterized by control means for switching the normal operation mode to a test mode in response to a test mode signal applied to a certain input terminal, selecting all desired memory cells of the memory cell array at a time, and allowing data applied to a data input terminal to be written to all the selected and desired memory cells at one time.

摘要翻译： 具有从存储单元阵列的选定存储单元读取数据的正常模式的半导体存储器件。 半导体存储器件的特征在于用于响应于施加到某个输入端子的测试模式信号将正常操作模式切换到测试模式的控制装置，一次选择存储单元阵列的所有期望存储单元，并允许数据 一次应用于要写入所有所选存储单元的数据输入端。

公开(公告)号：US5307317A

公开(公告)日：1994-04-26

申请号：US726379

申请日：1991-07-05

申请人： Sumako Shiraishi ,  Youichi Suzuki

发明人： Sumako Shiraishi ,  Youichi Suzuki

IPC分类号： G11C11/41 ,  G11C7/10 ,  H01L27/10 ,  G11C7/00 ,  G11C11/42

CPC分类号： G11C7/1048 ,  G11C7/1051

摘要： One cell of the first cell group CG and one cell of the second cell group CxG are selected simultaneously in response to address signals A1 and A2; data of these selected cells are amplified by the first and second sense amplifiers SA1 and SA2, respectively as sense outputs dA, dA, dB, dB; these sense outputs are given to a select circuit SEL including output buffer circuits OB; the select circuit outputs any of the first and second sense outputs to an output circuit Q17, Q18 in response to select signals ODA, ODB applied from an output switch circuit OSW on the basis of a specific address signal A12, A12. Since plural sense outputs based upon plural cell data are previously outputted simultaneously from the sense amplifiers to the select circuit and then one of the sense outputs is selected on the basis of a specific address, the cell data can be read at high speed as compared with when data are simply read from cells without simultaneous data transfer and data selection.

摘要翻译： 响应于地址信号A1和A2，同时选择第一小区组CG的一个小区和第二小区组CxG的一个小区; 这些选择的单元的数据分别由第一和第二读出放大器SA1和SA2放大作为感测输出dA，d（OVS），dB，d（OVS）; 这些感测输出被给予包括输出缓冲电路OB的选择电路SEL; 响应于从输出开关电路OSW基于特定地址信号A12施加的选择信号O（OVS），O（OVS），选择电路将任何第一和第二感测输出输出到输出电路Q17，Q18， A12。 由于基于多个单元数据的多个感测输出预先从读出放大器输出到选择电路，然后基于特定地址选择感测输出中的一个，所以可以高速读取单元数据，与 当从单元格中简单地读取数据，而不需要同时进行数据传输和数据选择。

公开(公告)号：US5263002A

公开(公告)日：1993-11-16

申请号：US713530

申请日：1991-06-12

申请人： Youichi Suzuki ,  Makoto Segawa

发明人： Youichi Suzuki ,  Makoto Segawa

IPC分类号： G11C11/41 ,  G11C7/10 ,  G11C8/14 ,  G11C11/401 ,  G11C11/407 ,  H01L27/10 ,  G11C5/06

CPC分类号： G11C8/14 ,  G11C7/10

摘要： In the semiconductor memory device, memory cells are divided into plural blocks; each block is further divided into plural I/O unit groups; and furthermore each I/O unit group is divided into plural small groups. The word lines provided for each small group of memory cells arranged at similar locations in each unit group are connected in common to a word line selecting line selected by a select circuit. Therefore, the number of memory cells connected to one word line can be reduced to decrease the power consumption and to increase the operating speed, without increasing the wiring capacitance and the chip size.

摘要翻译： 在半导体存储器件中，存储单元被分成多个块; 每个块进一步分为多个I / O单元组; 此外，每个I / O单元组被分成多个小组。 为每个单元组中相似位置布置的每个小组存储单元提供的字线共同连接到由选择电路选择的字线选择线。 因此，可以减少连接到一个字线的存储单元的数量，从而降低功耗并提高工作速度，而不增加布线电容和芯片尺寸。

公开(公告)号：US4893159A

公开(公告)日：1990-01-09

申请号：US219805

申请日：1988-07-13

申请人： Youichi Suzuki ,  Makoto Segawa ,  Shoji Ariizumi ,  Takeo Kondo ,  Fujio Masuoka

发明人： Youichi Suzuki ,  Makoto Segawa ,  Shoji Ariizumi ,  Takeo Kondo ,  Fujio Masuoka

IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L27/06 ,  H01L29/866 ,  H02H7/20 ,  H03F1/00 ,  H03F1/42 ,  H03F1/52

CPC分类号： H01L27/0251

摘要： This protected MOS transistor circuit has a p-type semiconductor substrate, VSS terminal, input MOS transistor, first resistor connected to the gate electrode of transistor, and MOS transistor which has a gate electrode connected to the VSS terminal and a current path connected between the VSS terminal and a junction of the first resistor and the gate electrode of the input MOS transistor. This protected MOS transistor circuit further has a second resistor connected in series with the first resistor, and pn-junction diode connected reversely between the VSS terminal and the junction of the first and second resistors.

摘要翻译： 该受保护的MOS晶体管电路具有p型半导体衬底，VSS端子，输入MOS晶体管，连接到晶体管的栅电极的第一电阻器和连接到VSS端子的栅电极的MOS晶体管， VSS端子和输入MOS晶体管的第一电阻和栅电极的结。 该受保护MOS晶体管电路还具有与第一电阻器串联连接的第二电阻器，并且pn结二极管反向连接在VSS端子与第一和第二电阻器的结点之间。

公开(公告)号：US4864164A

公开(公告)日：1989-09-05

申请号：US254915

申请日：1988-10-07

申请人： Shigeo Ohshima ,  Youichi Suzuki ,  Makoto Segawa

发明人： Shigeo Ohshima ,  Youichi Suzuki ,  Makoto Segawa

IPC分类号： G11C11/413 ,  G11C5/06 ,  G11C5/14 ,  G11C7/10 ,  G11C11/401 ,  G11C11/409 ,  H01L27/10 ,  H03K19/003

CPC分类号： G11C7/1057 ,  G11C5/063 ,  G11C5/14 ,  G11C7/1051 ,  G11C7/1078 ,  G11C7/1084 ,  H03K19/00361

摘要： An integrated circuit includes an input buffer circuit and an output buffer circuit. The source voltage to the input buffer circuit and the output buffer circuit are supplied through bonding pads formed independently on a semiconductor chip, and electrically connected to a source potential lead pin. The input node of the input buffer circuit is coupled to the source potential of the output buffer circuit with a capacitor.

公开(公告)号：US20120263857A1

公开(公告)日：2012-10-18

申请号：US13518155

申请日：2010-12-20

申请人： Youichi Suzuki

发明人： Youichi Suzuki

IPC分类号： A23F3/16

CPC分类号： A23F3/14 ,  A23F3/30

摘要： Provided is an instant black tea, which includes the non-polymer catechins at high concentration, is further reduced in bitterness and astringency, and is excellent in the appearance of its infusion. The instant black tea includes a beverage material containing black tea leaves and a dried green tea extract and sealed in a tea bag. A mass ratio of the non-polymer catechins/tannin in the beverage material is from 0.65 to 0.95.

摘要翻译： 提供了包含高浓度的非聚合型儿茶素类的即时红茶，进一步降低了苦味和涩味，并且其输液外观优异。 本发明的红茶包括含有红茶叶和干绿茶提取物的饮料，并密封在茶袋中。 饮料原料中的非聚合型儿茶素/单宁的质量比为0.65〜0.95。

公开(公告)号：US20110045380A1

公开(公告)日：2011-02-24

申请号：US12067877

申请日：2006-11-11

申请人： Youichi Suzuki ,  Hiroyoshi Fujimoto

发明人： Youichi Suzuki ,  Hiroyoshi Fujimoto

IPC分类号： H01M8/10

CPC分类号： H01M8/1004 ,  H01M8/0273 ,  H01M8/0276 ,  H01M8/028 ,  H01M8/0286 ,  H01M8/0297 ,  H01M8/242

摘要： The objective of the present invention is to provide a membrane electrode assembly, and a solid polymer electrolyte fuel cell having the assembly. The assembly has a member that has excellent gas sealing properties, and at the same time, is capable of improving electrode membrane strength. In the assembly, the polymer electrode membrane is not deteriorated. Further, the assembly is easy to be built up, since the number of components is small. The membrane electrode assembly for a solid polymer electrolyte fuel cell of the present invention is characterized in comprising a polymer electrolyte membrane, a fuel electrode layer and an air electrode layer located respectively on each surface of the membrane, and a fuel electrode diffusing layer and an air electrode diffusing layer located respectively on the fuel electrode layer and the air electrode layer; wherein an area of a planer section of the polymer electrolyte membrane is slightly larger than areas of planer sections of the fuel electrode layer and the air electrode layer; a reinforcing frame formed of a thermosetting resin is located on a part of the polymer electrolyte membrane where the fuel electrode layer or the air electrode layer is not formed on one side or both sides thereof; and a protective later exists in at least a part between the polymer electrolyte membrane and the reinforcing frame.

摘要翻译： 本发明的目的是提供一种膜电极组件和具有组件的固体聚合物电解质燃料电池。 该组件具有优异的气体密封性能，同时能够提高电极膜的强度。 在组装中，聚合物电极膜不劣化。 此外，组件易于构建，因为部件的数量很少。 本发明的固体高分子电解质型燃料电池用膜电极组件的特征在于，具备分别位于所述膜的各表面上的高分子电解质膜，燃料电极层和空气极层，以及燃料极扩散层和 分别位于燃料电极层和空气电极层上的空气电极漫射层; 其中所述聚合物电解质膜的平面部分的面积比所述燃料电极层和所述空气电极层的平面部分的面积稍大; 在聚合物电解质膜的一侧或两侧没有形成燃料电极层或空气电极层的部分上设置由热固性树脂形成的加强框架， 并且在聚合物电解质膜和加强框架之间的至少一部分中存在保护。

公开(公告)号：US07320237B2

公开(公告)日：2008-01-22

申请号：US11399324

申请日：2006-04-07

申请人： Hiroshi Kubota ,  Youichi Suzuki

发明人： Hiroshi Kubota ,  Youichi Suzuki

IPC分类号： B21B31/06 ,  B21C5/00 ,  G01B11/00

CPC分类号： B21B31/16 ,  B21B17/04 ,  B21B38/105 ,  B21C51/00

摘要： While a reference means having a positional relationship to the pass-line of a continuance mill determined in advance and caliber profile (area enclosed by the groove profile of a rolling roll) formed by a rolling roll at each stand are imaged within the same visual field and a position corresponding to the pass-line is calculated based on the region corresponding to the reference means within the taken image, the center position of the region corresponding to the caliber profile within the taken image is calculated and the misalignment amount of the caliber profile can be calculated based on the calculated center position and the calculated position corresponding to the pass-line. Accordingly, a misalignment amount can be measured accurately as long as images of the reference means and the caliber profile are taken within the same visual field.

摘要翻译： 虽然具有与预先确定的连续轧机的通过线的位置关系的参考装置在由每个支架上的轧辊形成的口径轮廓（由滚轧辊的槽轮廓包围的区域）成像在相同的视野内 并且基于与拍摄图像内的参考装置对应的区域计算与通行对应的位置，计算与拍摄图像内的口径轮廓对应的区域的中心位置，并且计算出口径轮廓的未对准量 可以基于计算的中心位置和对应于通过线的计算位置来计算。 因此，只要在相同的视野内拍摄参考装置和口径轮廓的图像，就可以精确地测量不对准量。

公开(公告)号：US06995399B2

公开(公告)日：2006-02-07

申请号：US10473688

申请日：2003-02-20

申请人： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

发明人： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  H01S5/026 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

摘要： AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

摘要翻译： AlGaInP系统激光器件（24）和AlGaAs系统激光器件（26）被布置成使得各条纹（28,30）彼此平行。 AlGaInP系统激光器件（24）从衬底的中心线放置到（011）平面（22b）侧，并且将AlGaAs系统激光器件（26）放置在（0 {过滤（1） 从主发射平面（01（激光的超（1）（22））侧观察基板的中心线的平面（22 a）侧，基板（22）是偏离基板，并从（0 { 在2度和15度的范围内相对于（100）平面以一定角度（θoff）向（011）平面（22b）向（011）平面（22b） AlGaInP系统激光器件（24）的轴L 1＆lt; 1＆gt;与AlGaAs系激光器件（26）的光轴L 2平行，并以约0.5°的角度接近 度。

公开(公告)号：US20050258434A1

公开(公告)日：2005-11-24

申请号：US11165014

申请日：2005-06-23

申请人： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

发明人： Hiroaki Abe ,  Shinichi Agatsuma ,  Nozomu Hoshi ,  Youichi Suzuki

IPC分类号： G11B7/126 ,  H01S5/026 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L27/15

CPC分类号： B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  H01S5/026 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4056 ,  H01S5/4087

摘要： AlGaInP system laser device (24) and AlGaAs system laser device (26) are arranged so that respective stripes (28, 30) are parallel to each other. The AlGaInP system laser device (24) is placed to (011) plane (22b) side from the centerline of the substrate and the AlGaAs system laser device (26) is placed to the (0{overscore (1)}{overscore (1)}) plane (22a) side from the centerline of the substrate when viewed from the main emitting plane (01{overscore (1)}) (22c) side of laser light. Substrate (22) is an off substrate and inclines from the (0{overscore (1)}{overscore (1)}) plane (22a) toward the (011) plane (22b) with respect to the (100) plane at a certain angle (θ off) within the range of 2 degrees and 15 degrees. Optical axis L1 of the AlGaInP system laser device (24) is parallel to optical axis L2 of the AlGaAs system laser device (26) and approaches at an angle of about 0.5 degrees.

摘要翻译： AlGaInP系统激光器件（24）和AlGaAs系统激光器件（26）被布置成使得各条纹（28,30）彼此平行。 AlGaInP系统激光器件（24）从衬底的中心线放置到（011）平面（22b）侧，并且将AlGaAs系统激光器件（26）放置在（0 {过滤（1） 从主发射平面（01（激光的超（1）（22））侧观察基板的中心线的平面（22 a）侧，基板（22）是偏离基板，并从（0 { 在2度和15度的范围内相对于（100）平面以一定角度（θoff）向（011）平面（22b）向（011）平面（22b） AlGaInP系统激光器件（24）的轴L 1＆lt; 1＆gt;与AlGaAs系激光器件（26）的光轴L 2平行，并以约0.5°的角度接近 度。