发明授权
- 专利标题： Dry etching method
- 专利标题（中）： 干蚀刻法
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申请号： US937781申请日： 1992-09-01
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公开(公告)号： US5401357A公开(公告)日： 1995-03-28
- 发明人: Hidekazu Okuhira , Tetsuo Ono , Susumu Hiraoka , Keizo Suzuki , Junji Shigeta , Hiroshi Masuda , Mitsuhiro Mori , Takuma Tanimoto , Shinichi Nakatsuka , Katsuhiko Mitani
- 申请人： Hidekazu Okuhira , Tetsuo Ono , Susumu Hiraoka , Keizo Suzuki , Junji Shigeta , Hiroshi Masuda , Mitsuhiro Mori , Takuma Tanimoto , Shinichi Nakatsuka , Katsuhiko Mitani
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-239242 19910919
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/285 ; H01L21/302 ; H01L21/306 ; H01L21/3065 ; H01L21/308 ; H01L21/316 ; H01L21/331 ; H01L21/335 ; H01L21/338 ; H01L29/205 ; H01L29/73 ; H01L29/737 ; H01L29/778 ; H01L29/812 ; B44C1/22
摘要：
A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma. The method is capable of selectively etching the desired material from a plurality of materials having different types of band gap energies or from a plurality of materials having different band gap energies. The method includes a step of irradiating a light having the specified wavelength on the sample for reducing an etching rate of a region having a large photo-absorption coefficient to the light, thereby selectively etching a region having a small photo-absorption coefficient to the light.
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