发明授权
- 专利标题: Sputtering target and method of manufacturing the same
- 专利标题(中): 溅射靶及其制造方法
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申请号: US12845申请日: 1993-02-04
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公开(公告)号: US5418071A公开(公告)日: 1995-05-23
- 发明人: Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
- 申请人: Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
- 申请人地址: JPX Kanagawa
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX4-054259 19920205
- 主分类号: B22F3/14
- IPC分类号: B22F3/14 ; C04B35/58 ; C22C1/05 ; C23C14/06 ; C23C14/34 ; H01L21/28 ; H01L21/285 ; B22F7/06
摘要:
In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
公开/授权文献
- USD357370S Tray 公开/授权日:1995-04-18