公开(公告)号：US5470527A

公开(公告)日：1995-11-28

申请号：US302996

申请日：1994-09-12

申请人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

发明人： Takashi Yamanobe ,  Michio Satou ,  Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Shigeru Ando

IPC分类号： C23C14/14 ,  C23C14/34 ,  B22F3/10

CPC分类号： C23C14/3414

摘要： A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

摘要翻译： 基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在 矩阵。 优选地，靶含有1ppm以下的铝。 目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。 还公开了溅射靶的制造方法。

公开(公告)号：US5458697A

公开(公告)日：1995-10-17

申请号：US351542

申请日：1994-12-07

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/477

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5418071A

公开(公告)日：1995-05-23

申请号：US12845

申请日：1993-02-04

申请人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

发明人： Michio Satou ,  Takashi Yamanobe ,  Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi ,  Toshihiro Maki ,  Minoru Obata ,  Shigeru Ando

IPC分类号： B22F3/14 ,  C04B35/58 ,  C22C1/05 ,  C23C14/06 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  B22F7/06

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C04B35/65 ,  C23C14/3414 ,  Y10T428/12014 ,  Y10T428/12028 ,  Y10T428/12049 ,  Y10T428/12056

摘要： In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

摘要翻译： 在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有 铝含量为1ppm以下。 由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。

公开(公告)号：US5196916A

公开(公告)日：1993-03-23

申请号：US655950

申请日：1991-02-15

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

公开(公告)号：US5679983A

公开(公告)日：1997-10-21

申请号：US454583

申请日：1995-05-31

申请人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

发明人： Takashi Ishigami ,  Minoru Obata ,  Mituo Kawai ,  Michio Satou ,  Takashi Yamanobe ,  Toshihiro Maki ,  Noriaki Yagi ,  Shigeru Ando

IPC分类号： C22B9/22 ,  C22B34/10 ,  C22B34/12 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C22B34/1272 ,  C22B34/10 ,  C22B34/129 ,  C22B34/1295 ,  C22B9/22 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53257 ,  H01L2924/0002

摘要： This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

摘要翻译： 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。

公开(公告)号：US5612571A

公开(公告)日：1997-03-18

申请号：US512911

申请日：1995-08-09

申请人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

发明人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC分类号： C04B35/58 ,  C23C14/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

摘要： According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

摘要翻译： 根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒不连续地分散在金属硅化物相的间隙中，从而提供 高密度溅射靶的混合结构，并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5508000A

公开(公告)日：1996-04-16

申请号：US345405

申请日：1994-11-21

申请人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

发明人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC分类号： C04B35/58 ,  C23C14/34 ,  B22F1/00

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

摘要： According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

摘要翻译： 根据本发明，硅化物颗粒以连接方式彼此连接以提供金属硅化物相，并且形成Si相的晶粒不连续地分散在金属硅化物相的间隙中，以提供混合结构 的高密度溅射靶并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5409517A

公开(公告)日：1995-04-25

申请号：US793384

申请日：1992-03-13

申请人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

发明人： Michio Satou ,  Takasi Yamanobe ,  Mituo Kawai ,  Tooru Komatu ,  Hiromi Shizu ,  Noriaki Yagi

IPC分类号： C04B35/58 ,  C23C14/34 ,  B22F5/00

CPC分类号： C04B35/58085 ,  C04B35/58092 ,  C04B35/645 ,  C23C14/3414 ,  Y10S75/95

摘要： According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

摘要翻译： PCT No.PCT / JP91 / 00639 Sec。 371日期：1992年3月13日 102（e）1992年3月13日PCT PCT 1991年5月15日提交PCT公布。 出版物WO91 / 18125 日本1991年11月28日。根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒分散在金属硅化物的间隙中 相，以提供高密度溅射靶和低于100ppm的碳的混合结构。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。

公开(公告)号：US5584906A

公开(公告)日：1996-12-17

申请号：US28084

申请日：1993-03-08

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： C22B9/22 ,  C22B34/12 ,  C22C14/00 ,  C23C14/34 ,  C25C3/28

CPC分类号： C22C14/00 ,  C22B34/1295 ,  C22B9/228 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

公开(公告)号：US06210634B1

公开(公告)日：2001-04-03

申请号：US09280001

申请日：1999-03-29

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： C22C1400

CPC分类号： C22B9/228 ,  C22B34/1295 ,  C22C14/00 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

摘要翻译： 通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。 否则，粗Ti颗粒被酸处理。 然后电子束熔化。 通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是 获得。 可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。