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公开(公告)号：US5612571A
公开(公告)日：1997-03-18
申请号：US512911
申请日：1995-08-09
Applicant: Michio Satou , Takasi Yamanobe , Mituo Kawai , Tooru Komatu , Hiromi Shizu , Noriaki Yagi
Inventor： Michio Satou , Takasi Yamanobe , Mituo Kawai , Tooru Komatu , Hiromi Shizu , Noriaki Yagi
CPC classification number: C04B35/58085 , C04B35/58092 , C04B35/645 , C23C14/3414 , Y10S75/95
Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.
Abstract translation: 根据本发明，金属硅化物晶粒以连接的方式彼此耦合以提供金属硅化物相，并且形成Si相的Si晶粒不连续地分散在金属硅化物相的间隙中，从而提供 高密度溅射靶的混合结构，并以小于100ppm的速度含有碳。 由于目标的高密度和高强度，可以减少溅射时的颗粒的产生，并且由于碳的含量降低，可以防止通过溅射形成的薄膜中的碳的混合。
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公开(公告)号：US5470527A
公开(公告)日：1995-11-28
申请号：US302996
申请日：1994-09-12
Applicant: Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
Inventor： Takashi Yamanobe , Michio Satou , Takashi Ishigami , Minoru Obata , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Shigeru Ando
CPC classification number: C23C14/3414
Abstract: A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.
Abstract translation: 基本上由Ti-W相的连续基体，分散在基体中的粒径为50μm以下的Ti相和粒径为20μm以下的W相组成的溅射靶也分布在 矩阵。 优选地，靶含有1ppm以下的铝。 目标具有高密度和低杂质含量，当用于溅射时，该靶减少了靶中的粒子的产生。 还公开了溅射靶的制造方法。
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公开(公告)号：US5458697A
公开(公告)日：1995-10-17
申请号：US351542
申请日：1994-12-07
Applicant: Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
Inventor： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC: C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , H01L21/477
CPC classification number: C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
Abstract translation: 这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。 高纯度金属的Al含量不大于10ppm。 氧含量大于250ppm，Fe，Ni和Cr的含量不大于10ppm，Na和K的含量不超过0.1ppm。 高纯度金属是通过用碘化法纯化粗金属或用粗金属表面处理去除存在于其表面上的污染层，然后在高真空中熔化具有电子束的表面处理材料而获得的。
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公开(公告)号：US4857120A
公开(公告)日：1989-08-15
申请号：US4273
申请日：1987-01-06
Applicant: Osamu Watanabe , mituo Kawai , Kanzi Kawaguchi
Inventor： Osamu Watanabe , mituo Kawai , Kanzi Kawaguchi
CPC classification number: C22C38/001 , C22C38/44 , C22C38/48
Abstract: A heat-resisting steel contains 0.08 to 0.15 percent by weight of carbon, over 0.2 to 0.6 percent of silicon, 0.3 to 0.8 percent of manganese, 0.6 to 1.2 percent of nickel, 9.5 to 11.0 percent of chromium, 0.7 to 1.5 percent of molybdenum, 0.15 to 0.27 percent of vanadium, 0.10 to 0.27 percent in total of niobium and/or tantalum, 0.03 to 0.08 percent of nitrogen, over 1.1 to 1.3 percent of tungsten, and iron for the remainder. The creep rupture strength of this heat-resisting steel is much higher than that of a prior art 12-Cr heat-resisting steel. A turbine component formed of the heat-resisting steel of the present invention has enough strength for use at a high temperature of 600.degree. to 650.degree. C.
Abstract translation: 耐热钢含有0.08〜0.15重量％的碳，超过0.2〜0.6％的硅，0.3〜0.8％的锰，0.6〜1.2％的镍，9.5〜11.0％的铬，0.7〜1.5％的钼 ，0.15〜0.27％的钒，0.10〜0.27％的铌和/或钽，0.03〜0.08％的氮，超过1.1％至1.3％的钨，其余为铁。 该耐热钢的蠕变断裂强度比现有技术的12-Cr耐热钢的蠕变断裂强度高得多。 由本发明的耐热钢形成的涡轮部件在600℃〜650℃的高温下具有足够的强度。
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公开(公告)号：US4585620A
公开(公告)日：1986-04-29
申请号：US386534
申请日：1982-06-09
Applicant: Hisato Kamohara , Tatsuyoshi Aisaka , Mituo Kawai
Inventor： Hisato Kamohara , Tatsuyoshi Aisaka , Mituo Kawai
CPC classification number: B23K35/304 , C22C19/052
Abstract: There is disclosed a wear-resistant alloy which comprises, in terms of weight ratio, 10 to 45% of chromium, 3 to 15% of niobium, 4 to 20% of molybdenum, 0.01 to 2.0% of boron, and nickel as the remainder.The wear-resistant alloy having a novel composition of the present invention is suitable for face portions of valves used in various plants such as a chemical plant and an atomic power plant, parts of jet pumps and sliding parts for various machines.
Abstract translation: 公开了一种耐磨合金，其以重量比计含有10〜45％的铬，3〜15％的铌，4〜20％的钼，0.01〜2.0％的硼和作为其余的镍的耐磨合金 。 具有本发明的新型组合物的耐磨合金适用于各种工厂如化工厂和原子能发电厂，喷射泵部件和各种机器的滑动部件中使用的阀门的面部。
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Patent Agency Ranking
公开(公告)号：US4400346A
公开(公告)日：1983-08-23
申请号：US189329
申请日：1980-09-22
Applicant: Tatsuyoshi Aisaka , Mituo Kawai , Suteto Hasegawa , Takeo Nawai
Inventor： Tatsuyoshi Aisaka , Mituo Kawai , Suteto Hasegawa , Takeo Nawai
CPC classification number: G21C7/113 , G21Y2002/104 , G21Y2004/30 , G21Y2004/301 , Y02E30/39 , Y10S384/901 , Y10T29/4984
Abstract: A control rod to be arranged in a nuclear reactor core comprises a body of a control rod, control rod guide rollers, pins connected to the guide rollers, and fixing members directly welded to the body of the control rod. The pins slidably support the respective guide rollers and the fixing members are engaged with the pins with a small clearance therebetween so as not to transfer welding heat from the fixing member to the pin.
Abstract translation: 设置在核反应堆堆芯中的控制杆包括控制棒的主体，控制杆导向辊，连接到引导辊的销和直接焊接到控制棒的主体的固定构件。 销可滑动地支撑相应的导向辊，并且固定构件与销之间以小间隙与销接合，以便不将焊接热量从固定构件转移到销上。
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7.发明授权公开(公告)号：US06210634B1
公开(公告)日：2001-04-03
申请号：US09280001
申请日：1999-03-29
Applicant: Takashi Ishigami , Mituo Kawai , Noriaki Yagi
Inventor： Takashi Ishigami , Mituo Kawai , Noriaki Yagi
IPC: C22C1400
CPC classification number: C22B9/228 , C22B34/1295 , C22C14/00 , C23C14/3414 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01074
Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.
Abstract translation: 通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。 否则，粗Ti颗粒被酸处理。 然后电子束熔化。 通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是 获得。 可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。
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公开(公告)号：US5530467A
公开(公告)日：1996-06-25
申请号：US689285
申请日：1991-06-19
Applicant: Takashi Ishigami , Mituo Kawai , Atsuko Iida
Inventor： Takashi Ishigami , Mituo Kawai , Atsuko Iida
CPC classification number: C23C14/3414 , H01C17/12
Abstract: A sputtering target comprises an oxide containing niobium, a silicide containing niobium and silicon oxide substantially for the rest. The sputtering target is formed e.g. by reactive sintering a powdery niobium or a powdery niobium alloy containing silicon oxide in the range of 15 to 70 mol % by mole ratio. A film resistor formed by using the sputtering target exhibits high specific resistance, good stabilities of resistance and a film composition and excellent reproducibility and is used as a heat generating resistor in e.g. a thermal printer head.
Abstract translation: PCT No.PCT / JP91 / 00119 Sec。 371日期1991年6月19日 102（e）1991年6月19日PCT 1991年1月31日PCT PCT。 公开号WO91 / 11328 日期为1991年8月8日。溅射靶包括含有铌的氧化物，含有铌的硅化物和基本上为其余的氧化硅。 溅射靶例如形成。 通过反应性烧结含有氧化硅的粉末状铌或含有氧化硅的粉末状铌合金的比例为15〜70摩尔％。 通过使用溅射靶形成的薄膜电阻器具有高电阻率，良好的电阻稳定性和薄膜组成以及优异的再现性，并且用作例如发热电阻器。 热敏打印头。
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公开(公告)号：US5418071A
公开(公告)日：1995-05-23
申请号：US12845
申请日：1993-02-04
Applicant: Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
Inventor： Michio Satou , Takashi Yamanobe , Takashi Ishigami , Mituo Kawai , Noriaki Yagi , Toshihiro Maki , Minoru Obata , Shigeru Ando
CPC classification number: C04B35/58085 , C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414 , Y10T428/12014 , Y10T428/12028 , Y10T428/12049 , Y10T428/12056
Abstract: In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
Abstract translation: 在本发明中，金属硅化物晶粒形成金属硅化物相的互连结构，形成Si相的Si晶粒不连续地分散在金属硅化物相之间，以提供具有高密度二相结构的溅射靶，并具有 铝含量为1ppm以下。 由于目标的高密度和高强度，溅射期间从目标产生颗粒减少，并且由于靶的碳含量降低，可以防止在溅射期间将碳混入薄膜中。
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公开(公告)号：US5196916A
公开(公告)日：1993-03-23
申请号：US655950
申请日：1991-02-15
Applicant: Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
Inventor： Takashi Ishigami , Minoru Obata , Mituo Kawai , Michio Satou , Takashi Yamanobe , Toshihiro Maki , Noriaki Yagi , Shigeru Ando
IPC: C22B9/22 , C22B34/10 , C22B34/12 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532
CPC classification number: C22B34/1272 , C22B34/10 , C22B34/129 , C22B34/1295 , C22B9/22 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002
Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.
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