发明授权
- 专利标题： Selectivity for etching an oxide over a nitride
- 专利标题（中）： 在氮化物上蚀刻氧化物的选择性
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申请号： US941501申请日： 1992-09-08
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公开(公告)号： US5423945A公开(公告)日： 1995-06-13
- 发明人: Jeffrey Marks , Kenneth S. Collins , Chan-Lon Yang , David W. Groechel , Peter R. Keswick
- 申请人： Jeffrey Marks , Kenneth S. Collins , Chan-Lon Yang , David W. Groechel , Peter R. Keswick
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/30
- IPC分类号： C23C16/30 ; C23C16/50 ; C23F4/00 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; H01L21/311 ; H05H1/46 ; H01L21/00
摘要：
A method of etching an oxide over a nitride with high selectivity comprising plasma etching the oxide with a carbon and fluorine-containing etchant gas in the presence of a scavenger for fluorine, thereby forming a carbon-rich polymer which passivates the nitride. This polymer is inert to the plasma etch gases and thus provides high selectivity to the etch process.
公开/授权文献
- US4726922A Yarn drying process 公开/授权日：1988-02-23
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