LAYER-LAYER ETCH OF NON VOLATILE MATERIALS
    1.
    发明申请
    LAYER-LAYER ETCH OF NON VOLATILE MATERIALS 审中-公开
    非挥发性物质的层间蚀刻

    公开(公告)号:US20130270227A1

    公开(公告)日:2013-10-17

    申请号:US13446778

    申请日:2012-04-13

    IPC分类号: C23F1/02 H01L21/306

    摘要: A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber.

    摘要翻译: 提供了一种用于蚀刻金属层的方法,其设置在掩模下方。 将金属层放置在蚀刻室中。 前体气体流入蚀刻室。 前体气体被吸附到金属层中以形成前体金属络合物。 将前体金属络合物加热到高于前体金属络合物的汽化温度的温度,同时将金属层暴露于前体气体。 蒸发的前体金属络合物从蚀刻室中排出。

    HEAT INDEX
    2.
    发明申请
    HEAT INDEX 审中-公开
    热指数

    公开(公告)号:US20090062941A1

    公开(公告)日:2009-03-05

    申请号:US12201971

    申请日:2008-08-29

    IPC分类号: G06F19/00

    摘要: The system generates a heat index for each player in a sporting event. Historical data is maintained over time and is available for display by a user. In one embodiment, the heat index is provided via a network such as the internet. In another embodiment, the heat index is displayed as part of an event or game broadcast. The heat index represents the current level of performance of a player pursuant to a calculation algorithm that includes objective and subjective information. The objective information includes statistical data from a game or contest. The subjective information may include references from announcers and input from viewers.

    摘要翻译: 该系统为体育赛事中的每个玩家生成热指数。 历史数据经过一段时间的维护,可供用户显示。 在一个实施例中,热指数通过诸如互联网的网络来提供。 在另一个实施例中,热指数被显示为事件或游戏广播的一部分。 热指数代表根据包括客观和主观信息的计算算法的玩家目前的表现水平。 客观信息包括来自游戏或比赛的统计数据。 主观信息可能包括播音员的参考资料和观众的输入。

    SYSTEM FOR PROVIDING PROMOTIONAL CONTENT AS PART OF SECONDARY CONTENT ASSOCIATED WITH A PRIMARY BROADCAST
    3.
    发明申请
    SYSTEM FOR PROVIDING PROMOTIONAL CONTENT AS PART OF SECONDARY CONTENT ASSOCIATED WITH A PRIMARY BROADCAST 审中-公开
    提供促销内容的系统作为与初级广播相关的二级内容的一部分

    公开(公告)号:US20080083003A1

    公开(公告)日:2008-04-03

    申请号:US11849238

    申请日:2007-08-31

    IPC分类号: H04N7/173

    摘要: The system provides a computer based presentation of promotional content synchronized to a broadcast and not merely to an event. The system includes a customizable interface that uses a broadcast and a plurality of secondary sources to present data and information to a user to enhance and optimize a broadcast experience. The system provides customizable delivery of the promotional content that is based on both the content and the context of the primary content broadcast. The contextual triggers define a state of the broadcast and select from a library of promotional content that is appropriate for that state and for the user. The system can also synchronize promotional content to any or all of the plurality of secondary sources as well. The system can provide promotional content on a user by user basis, providing uniquely user directed advertising.

    摘要翻译: 该系统提供与广播同步的促销内容的基于计算机的呈现,而不仅仅是事件。 该系统包括可定制的接口,其使用广播和多个次要源向用户呈现数据和信息以增强和优化广播体验。 该系统提供基于主要内容广播的内容和上下文的宣传内容的可定制的传送。 上下文触发器定义广播的状态,并从适合于该状态和用户的促销内容的库中进行选择。 该系统还可以将宣传内容同步到多个次要源中的任何一个或全部。 该系统可以通过用户为用户提供促销内容,提供独特的用户指导的广告。

    SYSTEM FOR PROVIDING SECONDARY CONTENT BASED ON PRIMARY BROADCAST
    4.
    发明申请
    SYSTEM FOR PROVIDING SECONDARY CONTENT BASED ON PRIMARY BROADCAST 审中-公开
    基于主要广播提供二级内容的系统

    公开(公告)号:US20080082922A1

    公开(公告)日:2008-04-03

    申请号:US11849239

    申请日:2007-08-31

    IPC分类号: G06F3/00

    摘要: The system provides a computer based presentation synchronized to a broadcast and not merely to an event. The system includes a customizable interface that uses a broadcast and a plurality of secondary sources to present data and information to a user to enhance and optimize a broadcast experience. The system defines templates that represent a customizable content interface for a user. In one embodiment, the templates comprise triggers, sources, widgets, and filters. In one embodiment the system receives the closed captioning feed (cc feed) of a broadcast and mines the text of the cc feed to identify keywords and triggers that will cause the retrieval, generation, and/or display of content related to the keywords and triggers. The system can also use speech recognition to supplement, or to replace, the cc feed and identify key words and triggers used to initiate content.

    摘要翻译: 该系统提供与广播同步的基于计算机的呈现,而不仅仅是事件。 该系统包括可定制的接口,其使用广播和多个次要源向用户呈现数据和信息以增强和优化广播体验。 系统定义代表用户可定制内容界面的模板。 在一个实施例中,模板包括触发器,源,小部件和过滤器。 在一个实施例中,系统接收广播的隐藏式字幕馈送(cc馈送)并且挖掘cc馈送的文本以识别将导致与关键字和触发相关的内容的检索,生成和/或显示的关键字和触发 。 该系统还可以使用语音识别来补充或替换cc进料,并识别用于启动内容的关键词和触发器。

    Display device
    5.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号:US20080055885A1

    公开(公告)日:2008-03-06

    申请号:US11822163

    申请日:2007-07-03

    申请人: Jeffrey Marks

    发明人: Jeffrey Marks

    IPC分类号: F21V33/00

    CPC分类号: G09F19/12 F21S10/002

    摘要: A multi-functional decorative display device as shown and described.

    摘要翻译: 如图所示的多功能装饰性显示装置。

    Reduction of feature critical dimensions using multiple masks
    6.
    发明授权
    Reduction of feature critical dimensions using multiple masks 有权
    使用多个掩模降低功能关键尺寸

    公开(公告)号:US07271107B2

    公开(公告)日:2007-09-18

    申请号:US11050985

    申请日:2005-02-03

    IPC分类号: H01L21/311

    摘要: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.

    摘要翻译: 提供了一种在蚀刻层中形成特征的方法。 在蚀刻层上形成第一掩模,其中第一掩模限定具有宽度的多个空间。 在第一掩模上形成侧壁层。 特征通过侧壁蚀刻到蚀刻层中,其中特征具有小于由第一掩模限定的空间的宽度的宽度。 去除掩模和侧壁层。 在蚀刻层上形成另外的掩模,其中附加掩模限定具有宽度的多个空间。 侧壁层形成在附加掩模上。 特征通过侧壁蚀刻到蚀刻层中,其中宽度小于由第一掩模限定的空间的宽度。 去除掩模和侧壁层。

    Normalization methods for genotyping analysis
    7.
    发明申请
    Normalization methods for genotyping analysis 审中-公开
    基因分型分析的归一化方法

    公开(公告)号:US20060178835A1

    公开(公告)日:2006-08-10

    申请号:US11057321

    申请日:2005-02-10

    申请人: Jeffrey Marks

    发明人: Jeffrey Marks

    IPC分类号: G06F19/00

    CPC分类号: G16B40/00 G16B25/00 G16B30/00

    摘要: In arrays and other high density analysis platforms variabilities between data points and/or data sets may arise for a number of reasons. Disclosed are methods for addressing these variabilities and generating correction factors that may be used in conforming the data to expected or desired distributions. The methods may be adapted to operate with existing data analysis approaches and software applications to improve downstream analysis.

    摘要翻译: 在阵列和其他高密度分析平台中,数据点和/或数据集之间的变化可能由于多种原因而出现。 公开了用于解决这些变异性并产生可用于使数据符合预期或期望分布的校正因子的方法。 这些方法可以适应于使用现有数据分析方法和软件应用来改进下游分析。

    Method and apparatus for detecting endpoint during plasma etching of thin films
    8.
    发明授权
    Method and apparatus for detecting endpoint during plasma etching of thin films 有权
    用于在薄膜等离子体蚀刻期间检测端点的方法和装置

    公开(公告)号:US06908846B2

    公开(公告)日:2005-06-21

    申请号:US10401114

    申请日:2003-03-27

    摘要: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

    摘要翻译: 公开了一种用于在蚀刻具有设置在端点产生层上方的第一层的层堆叠的同时控制等离子体蚀刻工艺的方法。 该方法包括:在监测穿过等离子体处理室的内部部分的光束的吸收率的同时,蚀刻穿过第一层并且至少部分地穿过端点产生层,其中端点产生层选自材料 其在蚀刻时产生可检测的吸收速率变化。 端点产生层的特征在于第一特征和第二特性中的至少一个。 第一特征是不足以用作蚀刻停止层的厚度,并且第二特性对于用于蚀刻通过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。 该方法还包括在检测到可检测变化时产生端点信号。

    High temperature silicon surface providing high selectivity in an oxide etch process
    9.
    发明授权
    High temperature silicon surface providing high selectivity in an oxide etch process 失效
    高温硅表面在氧化蚀刻工艺中提供高选择性

    公开(公告)号:US06399514B1

    公开(公告)日:2002-06-04

    申请号:US09645924

    申请日:2000-08-24

    IPC分类号: H01L21302

    摘要: A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.

    摘要翻译: 一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺,包括流入等离子体反应室中的含氟蚀刻气体,并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度 蚀刻气体的实例包括SiF 4和碳氟化合物气体。 等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器(诸如电感耦合等离子体发生器)产生。 通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器,其进而允许在1至30毫托之间的低压下进行蚀刻工艺,导致蚀刻氧化物层中的垂直侧壁。