发明授权
- 专利标题： Method for using low dielectric constant material in integrated circuit fabrication
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申请号： US165872申请日： 1993-12-14
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公开(公告)号： US5438022A公开(公告)日： 1995-08-01
- 发明人: Derryl D. J. Allman , Kenneth P. Fuchs , Gayle W. Miller , Samuel C. Gioia
- 申请人： Derryl D. J. Allman , Kenneth P. Fuchs , Gayle W. Miller , Samuel C. Gioia
- 申请人地址： OH Dayton CA Milpitas
- 专利权人： AT&T Global Information Solutions Company,Hyundai Electronics America
- 当前专利权人： AT&T Global Information Solutions Company,Hyundai Electronics America
- 当前专利权人地址： OH Dayton CA Milpitas
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/316 ; H01L21/324 ; H01L21/822 ; H01L23/14 ; H01L23/31 ; H01L23/522 ; H01L27/04 ; H01L21/00
摘要：
A low dielectric material is applied, as by spinning on, over the passivation layer of a semiconductor chip to fill the gaps which may exist between the top layer metal lines, and thereby minimize the possibility of cross talk which might otherwise be present between those lines.
公开/授权文献
- US4842710A Method of making mixed nitride films with at least two metals 公开/授权日：1989-06-27
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