Invention Grant
US5446275A Electron multiplying device having multiple dynode stages encased by a
housing
失效
具有由壳体封装的多个倍增电极级的电子倍增装置
- Patent Title: Electron multiplying device having multiple dynode stages encased by a housing
- Patent Title (中): 具有由壳体封装的多个倍增电极级的电子倍增装置
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Application No.: US63418Application Date: 1993-05-19
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Publication No.: US5446275APublication Date: 1995-08-29
- Inventor: Shiro Sakai , Takehisa Okamoto , Makoto Nakamura , Haruhisa Yamaguchi , Tetsuya Morita
- Applicant: Shiro Sakai , Takehisa Okamoto , Makoto Nakamura , Haruhisa Yamaguchi , Tetsuya Morita
- Applicant Address: JPX Hamamatsu
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JPX Hamamatsu
- Priority: JPX4-127702 19920520
- Main IPC: H01J43/04
- IPC: H01J43/04 ; H01J43/28 ; H01J40/14
Abstract:
The electron multiplying device according to this invention comprises an electron multiplying unit including dynodes arranged in a plurality of stages. The electron multiplying unit has an incidence opening for an energy beam to be multiplied to enter through, and has the proximal end secured to a base. There is provided a casing for housing the electron multiplying unit. The forward edge of the casing is secured to the base, and a space defined by the base and the casing houses the electron multiplying unit. The casing has an entrance window formed at a position opposed to the incidence opening. Energy beams enter the electron multiplying unit through the entrance window, but the electron multiplying unit itself is housed in the casing to be protected from surrounding air flow and unnecessary energy beams not to be measured.
Public/Granted literature
- US5898635A Power-up circuit responsive to supply voltage transients Public/Granted day:1999-04-27
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