发明授权
- 专利标题: Method for production of wafer
- 专利标题(中): 晶圆生产方法
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申请号: US210437申请日: 1994-03-21
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公开(公告)号: US5447890A公开(公告)日: 1995-09-05
- 发明人: Tadahiro Kato , Sunao Shima , Masami Nakano , Hisashi Masumura , Hideo Kudo
- 申请人: Tadahiro Kato , Sunao Shima , Masami Nakano , Hisashi Masumura , Hideo Kudo
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-064896 19930324
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/302 ; H01L21/304
摘要:
A wafer which allows manufacture of a device to proceed at an exalted yield by preventing the resolution of exposure at the step of photolithography during the manufacture of the device from being impaired is obtained by a method which comprises a slicing step for slicing a single crystal ingot thereby obtaining wafers of the shape of a thin disc, a chamfering step for chamfering the wafer obtained by the slicing step, a lapping step for imparting a flat surface to the chamfered wafer, an etching step for removing mechanical strain remaining in the lapped wafer, an obverse surface-polishing step for polishing one side of the etched wafer, and a cleaning step for cleaning the polished wafer, which method is characterized by interposing between the etching step and the obverse surface-polishing step a reverse surface-preparing step for preparing the shape of the reverse side of the wafer.
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