公开(公告)号：US20120100785A1

公开(公告)日：2012-04-26

申请号：US13264635

申请日：2010-03-30

申请人： Yukio Ishimasa ,  Ichiro Katayama ,  Tadahiro Kato ,  Kuniaki Oonishi

发明人： Yukio Ishimasa ,  Ichiro Katayama ,  Tadahiro Kato ,  Kuniaki Oonishi

IPC分类号： B24B1/00

CPC分类号： H01L21/02021 ,  B24B9/065

摘要： In a conventional wafer chamfering process, the chamfered shape (cross-sectional shape) of the wafer circumference is uniform. However, in the chamfering step in wafer manufacture, the uniform chamfered shape varies with respective circumferential positions. Therefore, a wafer chamfering method that takes into account deformation in the chamfering step in the wafer manufacture is to be provided. The wafer chamfering method is for chamfering a wafer by bringing a grooveless grindstone into contact with the edge (circumferential end) of a wafer. By this wafer chamfering method, a movement trajectory formed by moving the wafer and the grindstone in a relative manner in the Z-axis and Y-axis directions and forming the same cross-sectional shape on the entire wafer circumference is set as a reference. So as to perform a processing operation in which the relative positions of the wafer and the grindstone are changed from positions on the reference trajectory at least in one of the Z-axis and Y-axis directions depending on wafer rotation angle positions, different cross-sectional shapes are formed depending on the wafer rotation angle positions with the use of a piezoelectric actuator.

摘要翻译： 在传统的晶圆倒角工艺中，晶片圆周的倒角形状（横截面形状）是均匀的。 然而，在晶片制造中的倒角步骤中，均匀的倒角形状随着各个周向位置而变化。 因此，提供考虑到晶片制造中的倒角步骤中的变形的晶片倒角方法。 晶片倒角方法是通过使无槽磨石与晶片的边缘（圆周端）接触来倒角晶片。 通过该晶片倒角方法，设定通过使晶片和砂轮以相对于Z轴方向和Y轴方向移动而形成的移动轨迹，并且在整个晶片圆周上形成相同的横截面形状作为基准。 为了进行根据晶片旋转角位置至少在Z轴和Y轴方向之一上从基准轨迹上的位置改变晶片和磨石的相对位置的处理操作， 使用压电致动器，根据晶片旋转角度位置形成截面形状。

公开(公告)号：US08029339B2

公开(公告)日：2011-10-04

申请号：US12812959

申请日：2009-01-23

申请人： Tadahiro Kato ,  Kenji Kobayashi

发明人： Tadahiro Kato ,  Kenji Kobayashi

IPC分类号： B24B7/26

CPC分类号： B24B41/067 ,  B24B37/28

摘要： A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 μm, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

摘要翻译： 一种工件双盘磨削装置，包括：保持件，其沿着径向方向从外周支撑薄板状工件，并且可旋转; 一对静压支撑构件，其以基于静态流体压力的非接触方式从其两侧沿着其旋转的轴向方向支撑所述保持器; 以及一对磨石，其同时研磨由保持件支撑的工件的两个表面，其中保持器和静压支撑构件之间的间隔不大于50μm，并且流体的静压力不低于 超过0.3MPa。 结果，工件双盘磨削装置和工件双盘磨削方法可以稳定保持器的位置，这可能是在工件的双盘磨削中降低工件的纳米形貌的原因。

公开(公告)号：US20110053470A1

公开(公告)日：2011-03-03

申请号：US12812959

申请日：2009-01-23

申请人： Tadahiro Kato ,  Kenji Kobayashi

发明人： Tadahiro Kato ,  Kenji Kobayashi

IPC分类号： B24B1/00 ,  B24B5/307

CPC分类号： B24B41/067 ,  B24B37/28

摘要： A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 μm, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

摘要翻译： 一种工件双盘磨削装置，包括：保持件，其沿着径向方向从外周支撑薄板状工件，并且可旋转; 一对静压支撑构件，其以基于静态流体压力的非接触方式从其两侧沿着其旋转的轴向方向支撑所述保持器; 以及一对磨石，其同时研磨由保持件支撑的工件的两个表面，其中保持器和静压支撑构件之间的间隔不大于50μm，并且流体的静压力不低于 超过0.3MPa。 结果，工件双盘磨削装置和工件双盘磨削方法可以稳定保持器的位置，这可能是在工件的双盘磨削中降低工件的纳米形貌的原因。

公开(公告)号：US20110039476A1

公开(公告)日：2011-02-17

申请号：US12990236

申请日：2009-04-20

申请人： Kenji Kobayashi ,  Tadahiro Kato

发明人： Kenji Kobayashi ,  Tadahiro Kato

IPC分类号： B24B1/00 ,  B24B41/06

CPC分类号： B24B37/08 ,  B24B37/28

摘要： A double-disc grinding apparatus having at least: a rotatable ring-shaped holder for supporting a sheet-like wafer having a notch for indicating a crystal orientation from an outer circumference side along a radial direction, the holder having a protruding portion to be engaged with the crystal-orientation-indicating notch; and a pair of grindstones for simultaneously grinding both surfaces of the wafer supported by the holder, in which the holder is provided with at least one protruding portion separately from the protruding portion to be engaged with the crystal-orientation-indicating notch, and the both surfaces of the wafer are simultaneously ground by the pair of the grindstones while the wafer is supported and rotated with the at least one protruding portion being engaged with a wafer-supporting notch formed on the wafer.

摘要翻译： 一种双盘磨削装置，至少具有：可旋转的环状保持器，用于支撑具有用于沿着径向从外周侧指示晶体取向的切口的片状晶片，所述保持器具有待接合的突出部分 具有晶体取向指示凹槽; 以及一对砂轮，用于同时研磨由保持器支撑的晶片的两个表面，其中保持器设置有与突出部分分开的至少一个突出部分以与晶体取向指示槽口接合，并且两者 晶片的表面通过一对磨石同时磨削，同时晶片被支撑并旋转，其中至少一个突出部分与形成在晶片上的晶片支撑凹口接合。

公开(公告)号：US06444317B1

公开(公告)日：2002-09-03

申请号：US09369201

申请日：1999-08-06

申请人： Naoya Haruta ,  Tadahiro Kato ,  Takesi Tomiyama ,  Koichi Seike

发明人： Naoya Haruta ,  Tadahiro Kato ,  Takesi Tomiyama ,  Koichi Seike

IPC分类号： B32B2740

CPC分类号： B32B27/32 ,  B29C45/14811 ,  B32B27/08 ,  B32B27/20 ,  B32B27/308 ,  B32B2451/00 ,  B32B2605/08 ,  C08J7/047 ,  C08J2323/02 ,  C08J2475/00 ,  Y10T428/31 ,  Y10T428/3154 ,  Y10T428/31551 ,  Y10T428/31587 ,  Y10T428/31855 ,  Y10T428/31909 ,  Y10T428/31913 ,  Y10T428/31928 ,  Y10T428/31935

摘要： A decorative film for use in plastics molding, the decorative film being a laminate film prepared by outwardly and successively laminating a polyolefin film layer, a primer layer, optionally a topcoating layer and a releasable layer, the primer layer being a coating film formed from an isocyanate-curing type resin composition containing (A) a hydroxyl group-containing resin having a hydroxyl number of 30 to 200 KOH mg/g on an average and a weight average molecular weight of 1000 to 80000, (B) a polyolefin based resin and (C) a (blocked) polyisocyanate compound in such mixing amounts that a number of the isocyanate group in the component (C) is in the range of 0.1 to 0.9 per one hydroxyl group in the component (A) and that the component (B) is in the range of 1 to 90% by weight based on a total weight of the components (A), (B) and (C), and having a static glass transition temperature of 20 to 70° C., an elongation of 10% or more and a tensile strength of 0.5 kgf/mm2 or more; a process for preparing the decorative film and an injection-molded part by use of the decorative film.

摘要翻译： 一种用于塑料成型的装饰膜，该装饰膜是通过向外且相继层压聚烯烃膜层，底漆层，任选的表面涂层和可剥离层制备的层压膜，底漆层是由 异氰酸酯固化型树脂组合物，其含有（A）羟值为30〜200KOHmg / g的含羟基的树脂，平均重均分子量为1000〜80000，（B）聚烯烃类树脂和 （C）以这样的混合量的（封闭的）多异氰酸酯化合物，即组分（C）中的多个异氰酸酯基团在组分（A）中每一个羟基为0.1至0.9，组分（B ）在组分（A），（B）和（C）的总重量的1至90重量％的范围内，并且具有20至70℃的静态玻璃化转变温度， 10％以上，拉伸强度为0.5kgf / mm2以上; 通过使用装饰膜制备装饰膜和注射成型部件的方法。

公开(公告)号：US06358117B1

公开(公告)日：2002-03-19

申请号：US09441783

申请日：1999-11-17

申请人： Tadahiro Kato ,  Hisashi Oshima ,  Keiichi Okabe

发明人： Tadahiro Kato ,  Hisashi Oshima ,  Keiichi Okabe

IPC分类号： B24B4900

CPC分类号： B24B37/105 ,  B24B7/02 ,  B24B7/228 ,  B24B7/241 ,  B24B37/042 ,  B24D3/32

摘要： A surface grinding method is provided by which grinding striations are produced so that the striations can fully be removed by a polish-off amount less than required in a conventional way in mirror polishing following surface grinding using an infeed type surface grinder, in which two circular tables, opposite to each other, which are driven and rotate independently from each other, are arranged so that the peripheral end portion of one table coincides with an axial center of a rotary shaft of the other table all time, the two circular tables being located so as to be shifted sideways from each other; not only is a grinding stone held fixedly on an opposite surface of the one table, but the wafer is fixed on an opposite surface of the other table; the two tables are rotated relatively to each other; and at least one table is pressed on the other while at least one table is relatively moved in a direction, so that a surface of the wafer is ground, wherein the surface of the wafer is ground while controlling a pitch of grinding striations produced across all the surface of the wafer processed by the grinding stone to be 1.6 mm or less.

摘要翻译： 提供了一种表面研磨方法，通过该表面研磨方法可以生产研磨条纹，使得可以通过在使用进给型表面研磨机的表面研磨之后的镜面抛光中以常规方式所需的抛光量完全除去条纹，其中两个圆形 彼此相互驱动和相互旋转的工作台被布置成使得一个工作台的周边端部全部与另一个工作台的旋转轴的轴向中心重合，两个圆形工作台位于 以便彼此横向偏移; 研磨石不仅固定在一个桌子的相对表面上，而且将晶片固定在另一个桌子的相对表面上; 两个表相互旋转; 并且至少一个工作台被压在另一个上，同时至少一个工作台沿一个方向相对移动，使得晶片的表面被研磨，其中晶片的表面被研磨，同时控制所有晶片产生的磨削条纹的间距 由研磨石加工的晶片的表面为1.6mm以下。

公开(公告)号：US06239039B1

公开(公告)日：2001-05-29

申请号：US09207193

申请日：1998-12-08

申请人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

发明人： Takashi Nihonmatsu ,  Seiichi Miyazaki ,  Masahiko Yoshida ,  Hideo Kudo ,  Tadahiro Kato

IPC分类号： H01L21302

CPC分类号： H01L21/02052 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/30608 ,  Y10S438/928 ,  Y10S438/959 ,  Y10S438/974 ,  Y10S438/977

摘要： A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, alkali etching is first performed and then acid etching, preferably reaction-controlled acid etching, is performed. The etching amount of the alkali etching is greater than the etching amount of the acid etching. Alternatively, in the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination.

摘要翻译： 处理从单晶锭切片的半导体晶片的方法至少包括倒角，研磨，蚀刻，镜面抛光和清洁的步骤。 在蚀刻步骤中，首先进行碱蚀刻，然后进行酸蚀刻，优选进行反应控制的酸蚀刻。 碱蚀刻的蚀刻量大于酸蚀刻的蚀刻量。 或者，在蚀刻步骤中，首先进行反应控制的酸蚀刻，然后进行扩散控制的酸蚀刻。 反应控制的酸蚀刻的蚀刻量大于扩散控制的酸蚀刻的蚀刻量。 该方法可以去除机械形成的损伤层，提高表面粗糙度，并有效降低局部形成的深坑的深度，同时通过研磨获得的晶片的平整度得以保持，以便产生具有光滑平坦的化学蚀刻晶片 蚀刻的表面几乎不引起发生颗粒和污染。

公开(公告)号：US4759961A

公开(公告)日：1988-07-26

申请号：US48990

申请日：1987-05-12

申请人： Tadahiro Kato ,  Yasuhiro Fujii ,  Hiroaki Kiyata ,  Masaru Mitsuzi ,  Mototaka Iihashi

发明人： Tadahiro Kato ,  Yasuhiro Fujii ,  Hiroaki Kiyata ,  Masaru Mitsuzi ,  Mototaka Iihashi

IPC分类号： B05D7/26 ,  C08G18/16 ,  C08G18/42 ,  C08G18/62 ,  C08G18/63 ,  C08J7/04 ,  C09D175/04 ,  B05D1/36

CPC分类号： B05D7/26 ,  C08G18/16 ,  C08G18/4263 ,  C08G18/6254 ,  C08G18/633 ,  C08J7/045 ,  C09D175/04 ,  C08J2475/12

摘要： In a method for forming coatings, comprising the steps of applying a base coating containing a coloring pigment and/or a metallic pigment to produce a base coat, applying a topcoating containing a hydroxyl group-containing resin and a polyisocyanate compound over the base coat, and curing the coats at a temperature range between room temperature to about 140.degree. C., the method which is characterized in that the base coating contains the following as a vehicle component;(a) a resin having hydroxyl group and carboxyl group in the molecule,(b) a combination of the resin having hydroxyl group in the molecule and a catalyst for promoting the reaction between the hydroxyl group of the resin and the isocyanate group of the polyisocyanate compound in the topcoating or(c) a combination of the resin having hydroxyl group and carboxyl group in the molecule and a catalyst for promoting the reaction between the hydroxyl group of the resin and the isocyanate group of the polyisocyanate compound in the topcoating.

摘要翻译： 在形成涂层的方法中，包括以下步骤：施加含有着色颜料和/或金属颜料的底涂层以产生底涂层，在底涂层上涂布含有含羟基的树脂和多异氰酸酯化合物的表面涂层， 以及在室温至约140℃的温度范围内固化所述涂层，其特征在于，所述基底涂层包含以下作为载体组分的方法; （a）分子中具有羟基和羧基的树脂，（b）分子中具有羟基的树脂与促进树脂的羟基与多异氰酸酯的异氰酸酯基之间的反应的催化剂的组合 表面涂料中的化合物或（c）分子中具有羟基和羧基的树脂的组合，以及用于促进树脂的羟基与顶涂层中的多异氰酸酯化合物的异氰酸酯基团之间的反应的催化剂。

公开(公告)号：US08603897B2

公开(公告)日：2013-12-10

申请号：US13519218

申请日：2010-12-27

申请人： Tadahiro Kato

发明人： Tadahiro Kato

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76256 ,  H01L21/304

摘要： A method for manufacturing a bonded wafer including bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness.

摘要翻译： 一种接合晶片的制造方法，其特征在于，包括将接合晶片和基板在外周侧具有倒角部分并使所述接合晶片变薄的方法，其中所述接合晶片的薄化包括：第一步骤， 使得接合晶片的厚度达到第一预定厚度; 去除接地晶片的外周部分的第二步骤; 以及在接合晶片上进行表面研磨使得接合晶片的厚度达到第二预定厚度的第三步骤。

公开(公告)号：US20120289025A1

公开(公告)日：2012-11-15

申请号：US13519218

申请日：2010-12-27

申请人： Tadahiro Kato

发明人： Tadahiro Kato

IPC分类号： H01L21/762

CPC分类号： H01L21/76256 ,  H01L21/304

摘要： A method for manufacturing a bonded wafer including bonding together a bond wafer and a base wafer each having a chamfered portion at an outer circumference and thinning the bond wafer, wherein the thinning of the bond wafer includes: a first step of performing surface grinding on the bond wafer such that a thickness of the bond wafer reaches a first predetermined thickness; a second step of removing an outer circumference portion of the ground bond wafer; and a third step of performing surface grinding on the bond wafer such that the thickness of the bond wafer reaches a second predetermined thickness.

摘要翻译： 一种接合晶片的制造方法，其特征在于，包括将接合晶片和基板在外周侧具有倒角部分并使所述接合晶片变薄的方法，其中所述接合晶片的薄化包括：第一步骤， 使得接合晶片的厚度达到第一预定厚度; 去除接地晶片的外周部分的第二步骤; 以及在接合晶片上进行表面研磨使得接合晶片的厚度达到第二预定厚度的第三步骤。