发明授权
- 专利标题： Apparatus for biasing a FET with a single voltage supply
- 专利标题（中）： 用于使用单个电压源施加FET的装置
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申请号： US311224申请日： 1994-09-23
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公开(公告)号： US5483191A公开(公告)日： 1996-01-09
- 发明人: James R. Blodgett
- 申请人： James R. Blodgett
- 申请人地址： NJ Murray Hill
- 专利权人： AT&T Corp.
- 当前专利权人： AT&T Corp.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H03F1/30
- IPC分类号： H03F1/30 ; H03F3/193 ; H03L5/00 ; H03K17/14
摘要：
Embodiments of the present invention bias a field effect transistor with only a single voltage source and generally do not have the disadvantages of traditional "floated source" bias techniques. Furthermore, some embodiments of the present invention are capable of automatically compensating for the normal manufacturing variations that occur in the physical characteristics of individual FETs.
公开/授权文献
- US5060086A Apparatus for assembling of video tapes 公开/授权日：1991-10-22
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