发明授权
- 专利标题： Tin-indium antimonide infrared detector
- 专利标题（中）： 锑锡铱红外探测器
-
申请号： US305516申请日： 1994-09-13
-
公开(公告)号： US5497029A公开(公告)日： 1996-03-05
- 发明人: Katsuyoshi Fukuda , Fumio Nakata , Keitaro Shigenaka , Keijiro Hirahara
- 申请人： Katsuyoshi Fukuda , Fumio Nakata , Keitaro Shigenaka , Keijiro Hirahara
- 申请人地址： JPX Kanagawa
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX5-229165 19930914
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; C30B29/40 ; H01L21/205 ; H01L31/0304 ; H01L31/09 ; H01L31/10
摘要：
A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.
公开/授权文献
- US4968223A Gas and oil cooling system for a hermetic compressor 公开/授权日：1990-11-06
信息查询
IPC分类:
