公开(公告)号：US5497029A

公开(公告)日：1996-03-05

申请号：US305516

申请日：1994-09-13

申请人： Katsuyoshi Fukuda ,  Fumio Nakata ,  Keitaro Shigenaka ,  Keijiro Hirahara

发明人： Katsuyoshi Fukuda ,  Fumio Nakata ,  Keitaro Shigenaka ,  Keijiro Hirahara

IPC分类号： H01L21/203 ,  C30B29/40 ,  H01L21/205 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/10

CPC分类号： H01L31/09 ,  H01L31/0304 ,  Y02E10/544 ,  Y02P70/521

摘要： A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.

摘要翻译： 适用于红外线检测器的化合物半导体器件包括由铟锑化物（InSb）构成的衬底，沉积在衬底上并由式Snx（InSb）1-x表示的锡 - 铟锑化物组成的第一导电层，其中0.05 作为形成在第一导电层上的半导体区域（有源区域）的第二导电层和设置在第二导电层上的电极以及形成在第一导电层上的表面保护膜，除了 用于电极部分。

公开(公告)号：US06700111B2

公开(公告)日：2004-03-02

申请号：US10235719

申请日：2002-09-06

申请人： Keitaro Shigenaka ,  Fumio Nakata

发明人： Keitaro Shigenaka ,  Fumio Nakata

IPC分类号： H01L2700

CPC分类号： H01L31/1032 ,  H01L27/14652

摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

摘要翻译： 多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.77Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，与n < +区域和连接到光吸收层的接地电极，半导体隔离层与光吸收层电隔离。

公开(公告)号：US06790701B2

公开(公告)日：2004-09-14

申请号：US10235491

申请日：2002-09-06

申请人： Keitaro Shigenaka ,  Fumio Nakata

发明人： Keitaro Shigenaka ,  Fumio Nakata

IPC分类号： H01L3300

CPC分类号： H01L31/1032 ,  H01L27/14652

摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

摘要翻译： 多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.77Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，与n < +区域和连接到光吸收层的接地电极，半导体隔离层与光吸收层电隔离。

公开(公告)号：US06465860B2

公开(公告)日：2002-10-15

申请号：US09386294

申请日：1999-08-31

申请人： Keitaro Shigenaka ,  Fumio Nakata

发明人： Keitaro Shigenaka ,  Fumio Nakata

IPC分类号： H01L310296

CPC分类号： H01L31/1032 ,  H01L27/14652

摘要： A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

摘要翻译： 多波长半导体图像传感器包括形成在单晶CdZnTe衬底上的p型Hg0.7Cd0.3Te光吸收层，沉积在光吸收层上的CdTe隔离层，p型Hg0.7Cd0.23Te 沉积在CdTe隔离层上的光吸收层，形成在这些光吸收层中并与这些光吸收层中的每一个形成pn结的n +区，连接到这些n +区中的每一个的铟电极和地面 电极连接到光吸收层，半导体隔离层与光吸收层电隔离。