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公开(公告)号：US07067810B2
公开(公告)日：2006-06-27
申请号：US10393259
申请日：2003-03-21
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L25/00
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译： 一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。
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公开(公告)号：US07045785B2
公开(公告)日：2006-05-16
申请号：US10960987
申请日：2004-10-12
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J5/20
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, fanning a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.
摘要翻译： 一种制造红外线传感器的方法，包括制备包括由单晶硅制成的支撑构件的基板，形成在支撑构件上的由氧化硅制成的第一层和形成在第一层上的单晶硅制成的第二层， 在所述第二层上嵌入氧化硅层，在所述第二层中形成红外检测像素，所述红外检测像素具有将热量转换为电信号的功能，在所述硅上扇出包括U形导电体的支撑束线 氧化层，同时在第二层上形成外围电路的MOS晶体管的栅电极，栅电极具有U形横截面的导电体，在第二层上形成红外吸收层，红外线吸收层具有 将红外线转换为热的功能，以及蚀刻第二层以形成用于隔离红外线检测pi的孔 从衬底起xel并通过支撑束线将红外检测像素悬挂在孔内。
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公开(公告)号：US07015472B2
公开(公告)日：2006-03-21
申请号：US11063545
申请日：2005-02-24
IPC分类号： H01L31/062 , H01L31/113 , H01L31/058
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译： 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。
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公开(公告)号：US06984856B1
公开(公告)日：2006-01-10
申请号：US10392826
申请日：2003-03-21
IPC分类号： H01L31/0623 , H01L31/113 , H01L31/058
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
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公开(公告)号：US06770881B2
公开(公告)日：2004-08-03
申请号：US10726583
申请日：2003-12-04
申请人： Yoshinori Iida , Keitaro Shigenaka
发明人： Yoshinori Iida , Keitaro Shigenaka
IPC分类号： G01T116
CPC分类号： H04N5/33 , H01L27/14634 , H01L27/14649
摘要： A low noise, high sensitivity and wide dynamic range uncooled type infrared sensor can effectively reduce the influence of fluctuations of the gate of the amplifier transistor. The infrared sensor comprises an imaging region containing thermoelectric conversion pixels arranged two-dimensionally in the form of a matrix of a plurality of row and a plurality of columns on a semiconductor substrate to detect incident infrared rays, column selection lines, vertical signal lines, said column selection lines and said vertical signal lines being arranged the imaging region, amplifier transistors configured to be modulated by the respective signal voltages generated in the signal lines, storage capacities connected respectively to the drains of the amplifier transistors and configured to store signal charges from the transistors, a plurality of reset circuits for resetting the drain potentials of said amplifier transistors and read circuits for reading the respective signal charges stored in said storage capacities, coupling capacitors being arranged between the vertical signal lines and the gate of amplifier transistors, sampling transistors being connected between the drains and the gates of said amplifier transistors.
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公开(公告)号：US20060131506A1
公开(公告)日：2006-06-22
申请号：US11352339
申请日：2006-02-13
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01T1/24
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译： 一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。
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公开(公告)号：US07026617B2
公开(公告)日：2006-04-11
申请号：US10647345
申请日：2003-08-26
IPC分类号： G01J5/00
CPC分类号： G01J5/08 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/0245 , G01J5/0853 , G01J5/14 , G01J5/22 , G01J2005/123 , H04N5/33
摘要： An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.
摘要翻译： 红外图像传感器包括（a）基体，（b）设置在基体上的多条信号线，（c）与信号线交叉的多个地址线，（d）多个检测器部分， 信号线的交叉区域和地址线，每个检测器部分连接在对应的信号线和地址线之间，每个检测器部分被配置为检测红外线，（e）多个支撑梁 每个检测器部分在基体上方，以及（f）多个接触器，其构造成使得每个检测器部分与基体热接触，以便将热能积聚在每个检测器部分中朝向基体 。
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公开(公告)号：US20050139774A1
公开(公告)日：2005-06-30
申请号：US11063545
申请日：2005-02-24
IPC分类号： G01J1/42 , G01J1/02 , G01J1/44 , G01J5/00 , G01J5/20 , G01J5/22 , G01J5/24 , G01J5/48 , H01L27/14 , H01L27/16 , H01L37/00 , H04N5/33 , H04N5/335 , H04N5/369
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译： 成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层 基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择 并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。
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公开(公告)号：US20050061978A1
公开(公告)日：2005-03-24
申请号：US10960987
申请日：2004-10-12
申请人： Yoshinori Ilda , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Ilda , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J1/02 , G01J5/20 , G01J5/24 , H01L21/28 , H01L27/14 , H01L27/146 , H01L27/16 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/09 , H01L37/02
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, forming a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.
摘要翻译： 一种制造红外线传感器的方法，包括制备包括由单晶硅制成的支撑构件的基板，形成在支撑构件上的由氧化硅制成的第一层和形成在第一层上的单晶硅制成的第二层， 在第二层上嵌入氧化硅层，在第二层中形成红外检测像素，红外检测像素具有将热量转换成电信号的功能，在硅上形成包括U形导体的支撑束线 氧化层，同时在第二层上形成外围电路的MOS晶体管的栅电极，栅电极具有U形横截面的导电体，在第二层上形成红外吸收层，红外线吸收层具有 将红外线转换为热的功能，以及蚀刻第二层以形成用于隔离红外线检测pi的孔 从衬底起xel并通过支撑束线将红外检测像素悬挂在孔内。
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公开(公告)号：US20050029454A1
公开(公告)日：2005-02-10
申请号：US10957623
申请日：2004-10-05
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L27/14 , H01L27/146 , H04N5/33 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/374 , G01J5/20
CPC分类号： H01L27/14649 , H04N5/33
摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.
摘要翻译： 固体红外成像器包括红外感测像素的矩阵阵列，其形成为半导体衬底上的成像区域，并且每个都包含用于感测入射的红外辐射的pn结热电转换器元件，每个连接到 相应行的像素，各自连接到相应列的像素的信号线，选择并驱动行选择行中的一个的行选择电路，以及读出从信号线输出到信号线的信号电流的信号读出电路 对应于由行选择电路驱动的行选择线的像素。 特别地，信号读出电路包括使信号线的电位稳定到恒定电平的信号线势势稳定器，以及将在信号线中流动的信号电流转换为信号电压的电流 - 电压转换器。
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