发明授权
- 专利标题： Semiconductor device having a planarized surface
- 专利标题（中）： 具有平坦化表面的半导体器件
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申请号： US298296申请日： 1994-08-31
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公开(公告)号： US5500558A公开(公告)日： 1996-03-19
- 发明人: Yoshio Hayashide
- 申请人： Yoshio Hayashide
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-025220 19940223
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/304 ; H01L21/306 ; H01L21/3105 ; H01L21/768 ; H01L23/52 ; H01L21/321 ; H01L23/522
摘要：
An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.
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