公开(公告)号：US5840619A

公开(公告)日：1998-11-24

申请号：US586528

申请日：1996-01-16

申请人： Yoshio Hayashide

发明人： Yoshio Hayashide

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/52 ,  H01L21/44

CPC分类号： H01L21/31056 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76819 ,  H01L2924/0002

摘要： An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.

摘要翻译： 本发明的目的是在大幅度水平扩展的凸形图案中，在短时间内完全降低水平差，得到具有平坦化面的半导体装置。 绝缘膜形成在半导体衬底上以覆盖水平展开的凸形图案并填充凹部。 选择性地蚀刻位于凸形图案的平坦化部分上的绝缘膜的一部分，以便至少在凸形图案的外周部分上留出宽度为1-500μm的框状绝缘膜。 通过化学/机械抛光方法蚀刻残留在半导体衬底上的绝缘膜，从而使半导体衬底的表面平坦化。

公开(公告)号：US5500558A

公开(公告)日：1996-03-19

申请号：US298296

申请日：1994-08-31

申请人： Yoshio Hayashide

发明人： Yoshio Hayashide

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/768 ,  H01L23/52 ,  H01L21/321 ,  H01L23/522

CPC分类号： H01L21/31056 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76819 ,  H01L2924/0002

摘要： An object of the present invention is to completely reduce a difference in level in a short time at a convex pattern spreading horizontally on a large scale and obtain a semiconductor device having a planarized surface. An insulating film is formed on a semiconductor substrate to cover a horizontally spreading convex pattern and to fill in a concave portion. A portion of insulating film located on a planarized portion of convex pattern is selectively etched away so as to leave a frame-shaped insulating film having a width of 1-500 .mu.m at least on the outer periphery portion of convex pattern. Insulating film left on semiconductor substrate is etched by chemical/mechanical polishing method, thereby planarizing a surface of the semiconductor substrate.

摘要翻译： 本发明的目的是在大幅度水平扩展的凸形图案中，在短时间内完全降低水平差，得到具有平坦化面的半导体装置。 绝缘膜形成在半导体衬底上以覆盖水平展开的凸形图案并填充凹部。 选择性地蚀刻位于凸形图案的平坦化部分上的绝缘膜的一部分，以便至少在凸形图案的外周部分上留出宽度为1-500μm的框状绝缘膜。 通过化学/机械抛光方法蚀刻残留在半导体衬底上的绝缘膜，从而使半导体衬底的表面平坦化。

公开(公告)号：US5318920A

公开(公告)日：1994-06-07

申请号：US956225

申请日：1992-10-05

申请人： Yoshio Hayashide

发明人： Yoshio Hayashide

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/265

CPC分类号： H01L27/10817 ,  Y10S148/014 ,  Y10S148/138 ,  Y10S438/964

摘要： A silicon layer having semispherical protrusions of about 100 nm is formed as a lower electrode of a capacitor by low pressure vapor deposition method. A silicon oxide film is formed by oxidizing the surface of this silicon layer. The intervals between the rough portions of the silicon layer are increased by removing this silicon oxide film. Thereafter, a dielectric layer and an upper electrode are formed. In other methods, after the formation of the silicon layer having the roughness, thermal treatment is continuously carried out in oxygen-free atmosphere to increase radius of curvature of the roughness of the silicon layer. Thereafter, the dielectric layer and the upper electrode are formed.

摘要翻译： 通过低压气相沉积法形成具有约100nm的半球形突起的硅层作为电容器的下电极。 通过氧化该硅层的表面形成氧化硅膜。 通过去除该氧化硅膜来增加硅层的粗糙部分之间的间隔。 此后，形成电介质层和上电极。 在其他方法中，在形成具有粗糙度的硅层之后，在无氧气氛中连续进行热处理以增加硅层粗糙度的曲率半径。 此后，形成电介质层和上电极。

公开(公告)号：US07465216B2

公开(公告)日：2008-12-16

申请号：US11878028

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24B51/00 ,  B24B1/00 ,  B24B57/00

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

摘要翻译： 第一供应单元将含有磨粒的研磨浆料喷射并供应到混合单元中。 第二供应单元喷雾并将混合单元中的添加剂供应。 第三供应单元喷雾并将纯水供应到混合单元中。 混合单元混合研磨浆料雾，添加剂雾和纯水雾以制备抛光溶液，并将抛光溶液供应到抛光台的主表面上。

公开(公告)号：US20070270086A1

公开(公告)日：2007-11-22

申请号：US11878030

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24C1/08

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

公开(公告)号：US20070264908A1

公开(公告)日：2007-11-15

申请号：US11878028

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24B1/00

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

公开(公告)号：US07258598B2

公开(公告)日：2007-08-21

申请号：US09934474

申请日：2001-08-23

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24B1/00 ,  B24B5/00

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

摘要翻译： 第一供应单元将含有磨粒的研磨浆料喷射并供应到混合单元中。 第二供应单元喷雾并将混合单元中的添加剂供应。 第三供应单元喷雾并将纯水供应到混合单元中。 混合单元混合研磨浆料雾，添加剂雾和纯水雾以制备抛光溶液，并将抛光溶液供应到抛光台的主表面上。

公开(公告)号：US5488246A

公开(公告)日：1996-01-30

申请号：US229273

申请日：1994-04-18

申请人： Yoshio Hayashide ,  Kouichirou Tsujita

发明人： Yoshio Hayashide ,  Kouichirou Tsujita

IPC分类号： G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/318 ,  H01L23/532 ,  H01L27/12

CPC分类号： H01L21/31105 ,  H01L23/5329 ,  H01L2924/0002

摘要： A semiconductor device and method of manufacturing the same includes the steps of forming silicon nitride films including much silicon than a stoichiometric silicon nitride (Si.sub.3 N.sub.4) and which will be an anti-reflection film, forming a resist film on the plasma silicon nitride films and, and concurrently patterning plasma silicon nitride films and conductive layers and using the resist film as a mask. As a result, high integration of the semiconductor device can be attained.

摘要翻译： 半导体器件及其制造方法包括以下步骤：形成包含比化学计量氮化硅（Si 3 N 4）多的硅的氮化硅膜，并且其将是抗反射膜，在等离子体氮化硅膜上形成抗蚀剂膜， 并且同时构图等离子体氮化硅膜和导电层，并使用抗蚀剂膜作为掩模。 结果，可以实现半导体器件的高集成度。

公开(公告)号：US07465221B2

公开(公告)日：2008-12-16

申请号：US11878030

申请日：2007-07-20

申请人： Masanobu Iwasaki ,  Yoshio Hayashide

发明人： Masanobu Iwasaki ,  Yoshio Hayashide

IPC分类号： B24B5/00 ,  B24B1/00 ,  B24B57/00

CPC分类号： B24B37/04 ,  B24B57/02 ,  B24C11/005

摘要： A first supply unit sprays and supplies abrasive slurry containing abrasive grains into a mixing unit. A second supply unit sprays and supplies additive into the mixing unit. A third supply unit sprays and supplies pure water into the mixing unit. The mixing unit mixes the mist of abrasive slurry, the mist of additive and the mist of pure water to prepare polishing solution, and supplies the polishing solution onto the major surface of a polishing stage.

公开(公告)号：US06914011B2

公开(公告)日：2005-07-05

申请号：US10640331

申请日：2003-08-14

申请人： Yoshio Hayashide ,  Kazuo Kobayashi ,  Yasufumi Morimoto

发明人： Yoshio Hayashide ,  Kazuo Kobayashi ,  Yasufumi Morimoto

IPC分类号： H01L21/31 ,  C23C16/48 ,  H01L21/316

CPC分类号： H01L21/02271 ,  C23C16/481 ,  H01L21/02129 ,  H01L21/31625

摘要： A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to the internal space and a heating part heating the substrate. After an oxide film is formed on the substrate, the gas supply part supplies oxygen or a gas mixture of oxygen and ozone to the internal space while the heating part heats the substrate. Thus provided is a film deposition system capable of flattening an oxide film.

摘要翻译： 薄膜沉积系统包括具有内部空间的室，设置在用于支撑基板的室的内部空间中的支撑部分，向内部空间供应气体的气体供应部分和加热基板的加热部分。 在基板上形成氧化膜之后，气体供给部分在加热部分加热基板的同时向内部空间供给氧气或氧气和臭氧的气体混合物。 由此提供能够使氧化膜平坦化的膜沉积系统。