发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
-
申请号: US209120申请日: 1994-03-11
-
公开(公告)号: US5508963A公开(公告)日: 1996-04-16
- 发明人: Akihiro Sawada , Hiroyuki Yamauchi , Hironori Akamatsu , Shunichi Iwanari , Masashi Agata , Hirohito Kikukawa , Hisakazu Kotani
- 申请人: Akihiro Sawada , Hiroyuki Yamauchi , Hironori Akamatsu , Shunichi Iwanari , Masashi Agata , Hirohito Kikukawa , Hisakazu Kotani
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX5-051881 19930312; JPX5-115795 19930518; JPX5-212667 19930827
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C7/00
摘要:
N-piece redundant address comparing circuits are individually composed of impedance converting circuits, so that information using redundancy is transmitted as an impedance value. Consequently, even though the N becomes larger as the capacity of a memory becomes larger, a signal line having large capacitance and the node of a redundant judging circuit are not charged or discharged. A high-speed operation can be realized without being affected by the capacitance of the signal line or by the capacitance of the node of the redundant judging circuit.
公开/授权文献
- US6016265A Fuse-latch circuit having high integration density 公开/授权日:2000-01-18
信息查询