发明授权
- 专利标题: Flash-erase-type nonvolatile semiconductor storage device
- 专利标题(中): 闪存擦除型非易失性半导体存储器件
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申请号: US119916申请日: 1993-09-10
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公开(公告)号: US5509018A公开(公告)日: 1996-04-16
- 发明人: Hideto Niijima , Takashi Toyooka , Akashi Satoh , Yoshinori Sakaue
- 申请人: Hideto Niijima , Takashi Toyooka , Akashi Satoh , Yoshinori Sakaue
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 优先权: JPX4-243118 19920911
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G06F11/10 ; G11C16/02 ; G11C16/06 ; G11C16/16 ; G11C16/22 ; G11C29/00 ; G11C29/04 ; G11C29/42 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; G06F11/00 ; G11C11/40
摘要:
An array of memory cells is physically divided into a data area and a tag area so that respective parts of the two areas share a word line but can be separately erased en bloc. The data area and tag area sharing one word line constitute a single logical unit. In the logical unit, the tag area stores location information for defective memory cells in the corresponding data area. On the basis of this information, the system avoids the use of the defective memory cells. The defective memory cell information is programmed in a test step performed after chip manufacture and, at the same time, ECCs are generated for the defective memory cell information and written to the tag area. Furthermore, the system is informed of the validity of the data area that shares a word line with a tag area by writing predetermined data to the tag area. Even when the data area is erased en bloc, the tag area is not erased and the defective memory cell information is retained there.
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