发明授权
- 专利标题: Production of high-purity silicon ingot
- 专利标题(中): 生产高纯硅锭
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申请号: US139633申请日: 1993-10-19
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公开(公告)号: US5510095A公开(公告)日: 1996-04-23
- 发明人: Fukuo Aratani , Kyojiro Kaneko
- 申请人: Fukuo Aratani , Kyojiro Kaneko
- 申请人地址: JPX Kobe
- 专利权人: Kawasaki Steel Corporation
- 当前专利权人: Kawasaki Steel Corporation
- 当前专利权人地址: JPX Kobe
- 优先权: JPX2-248883 19900920
- 主分类号: C01B33/037
- IPC分类号: C01B33/037 ; B22D11/11 ; C30B11/00 ; C30B13/00 ; H01L21/208 ; H01L31/04 ; C30B15/12 ; C30B13/20
摘要:
A process for producing high-purity silicon for solar cells continuously directly from inexpensive silicon containing a comparatively large amount of impurities. This process comprises melting continuously supplied raw material silicon in a bottomless crucible placed in an induction coil, while blowing a hot plasma gas incorporated with an oxygen-containing substance on the surface of the melt for purification, and continuously discharging the solidified silicon downward from said bottomless crucible, with at least an axial part of said bottomless crucible being divided into a plurality of electrically conductive pieces spaced circumferentially.
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