公开(公告)号：US11725299B2

公开(公告)日：2023-08-15

申请号：US17384977

申请日：2021-07-26

申请人： NOVEL CRYSTAL TECHNOLOGY, INC.

发明人： Kimiyoshi Koshi

IPC分类号： C30B13/20 ,  C30B15/08 ,  C30B15/00 ,  C30B15/14 ,  C30B29/16

CPC分类号： C30B15/08 ,  C30B15/002 ,  C30B15/14 ,  C30B29/16

摘要： A single crystal manufacturing apparatus to grow a single crystal upward from a seed crystal, the apparatus including an insulated space thermally insulated from a space outside the single crystal manufacturing apparatus, an induction heating coil placed outside the insulated space, a thermal insulation plate that divides the insulated space into a first space including a crystal growth region to grow the single crystal and a second space above the first space and includes a hole above the crystal growth region, a heating element that is placed in the second space and generates heat by induction heating using the induction heating coil to heat the inside of the insulated space, and a support shaft to vertically movably support the seed crystal from below.

公开(公告)号：US20170069482A1

公开(公告)日：2017-03-09

申请号：US15354957

申请日：2016-11-17

申请人： Rayton Solar Inc.

发明人： Andrew X. Yakub ,  James Benjamin Rosenzweig ,  Mark Stanley Goorsky

IPC分类号： H01L21/02 ,  H01L21/263 ,  C30B33/02 ,  C30B13/20 ,  C30B29/06

CPC分类号： H01L21/02035 ,  B28D5/00 ,  C30B13/20 ,  C30B13/24 ,  C30B29/06 ,  C30B29/64 ,  C30B33/02 ,  C30B33/06 ,  H01L21/263 ,  Y10T117/1088

摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

摘要翻译： 用于制造硅晶片的工艺包括用于安装用于剥离的浮动区硅工件的步骤，为微波装置通电以产生足以穿透浮动区硅工件的外表面层的通电束，使外表面层 具有通电束的浮区硅工件，并且将硅剥离的外表面层从浮区硅工件中去除，其厚度小于100微米。

公开(公告)号：US08834627B2

公开(公告)日：2014-09-16

申请号：US12913970

申请日：2010-10-28

申请人： Wilfried von Ammon ,  Ludwig Altmannshofer ,  Martin Wasner

发明人： Wilfried von Ammon ,  Ludwig Altmannshofer ,  Martin Wasner

IPC分类号： C30B9/04 ,  C30B29/06 ,  C30B13/20

CPC分类号： C30B13/20 ,  C30B29/06

摘要： Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.

摘要翻译： 通过利用设置在由硅组成的旋转板下方的感应加热线圈结晶单晶的锥形延伸部分，通过重新熔化硅颗粒的方法来生长硅单晶; 通过板中的锥形管馈送感应熔融的硅，管包围板的中心开口并在板下方延伸到位于单晶的锥形延伸部分处的熔体，其与锥形管的管端接触 其中，通过板下方的感应加热线圈，提供足够的能量以确保管端的外径不小于15mm，只要单晶的锥形延伸部分的直径为15至 30毫米。

公开(公告)号：US6136091A

公开(公告)日：2000-10-24

申请号：US102373

申请日：1998-06-23

申请人： Motoharu Yamazaki ,  Tetsuhiro Okuno

发明人： Motoharu Yamazaki ,  Tetsuhiro Okuno

IPC分类号： C01B33/02 ,  C01B33/037 ,  C30B11/00 ,  C30B21/02 ,  C30B28/06 ,  C30B29/06 ,  H01L21/208 ,  H01L31/04 ,  C30B13/20

CPC分类号： C30B29/06 ,  C30B11/002

摘要： A silicon semiconductor material is charged in a double-structured crucible of an outer crucible and an inner crucible. The crucible is heated from the upper side thereof by the heat radiated from a heating member energized by an induction heating coil, so that the silicon raw semiconductor material is melted. The bottom of the crucible is mounted on a supporting bed cooled by cooling water supplied from a cooling medium tank. The silicon semiconductor material is melted in the inner crucible and starts solidifying from the bottom portion thereof. The silicon semiconductor material expands in volume at the time of solidification. Since a gap is formed between the inner crucible and the outer crucible, however, the outward extension of the inner crucible with the silicon semiconductor material alleviates a strain generated at the time of solidification, thereby producing an excellent polycrystalline semiconductor ingot. As a result, the strain in the polycrystalline semiconductor ingot produced by the unidirectional solidification process is reduced to improve the quality.

摘要翻译： 将硅半导体材料装入外坩埚和内坩埚的双结构坩埚中。 通过由感应加热线圈激励的加热部件发出的热量从其上侧加热坩埚，使硅原料半导体材料熔化。 坩埚的底部安装在由冷却介质罐供应的冷却水冷却的支撑床上。 硅半导体材料在内坩埚中熔化并从其底部开始凝固。 在固化时硅半导体材料体积膨胀。 由于在内坩埚和外坩埚之间形成间隙，所以内坩埚与硅半导体材料的向外延伸减轻了固化时产生的应变，从而制造了优异的多晶半导体晶锭。 结果，通过单向凝固工艺生产的多晶半导体锭中的应变被降低以提高质量。

公开(公告)号：US5499598A

公开(公告)日：1996-03-19

申请号：US208864

申请日：1994-03-11

申请人： Hiroyuki Oda

发明人： Hiroyuki Oda

IPC分类号： C30B1/08 ,  C30B13/00 ,  C30B13/20 ,  C30B29/06 ,  H01L21/208 ,  C30B13/06

CPC分类号： C30B29/06 ,  C30B13/20

摘要： Silicon granules filled in a nonconductive cylinder are locally heated from outside of the cylinder using a local heating means, for example, a radio-frequency induction heating coil etc. to form a silicon granule sintering portion and a silicon melting portion, with gradually moving the local heating means in such a manner that the positions of the sintering portion and of the melting portion can be moved gradually. Concomitantly with the movement of the positions of the sintering portion and the melting portion, the melting portion in the original position is solidified to produce a silicon rod. According to this method, molten silicon is formed without contacting the inner wall surface of the cylinder and then solidified so that there can be obtained a silicon rod containing no impurities derived from the material of the cylinder.

摘要翻译： 填充在非导电圆柱体中的硅颗粒使用局部加热装置（例如射频感应加热线圈等）从气缸的外部局部加热，以形成硅颗粒烧结部分和硅熔化部分，逐渐移动 局部加热装置，使得烧结部分和熔化部分的位置能够逐渐移动。 伴随着烧结部分和熔化部分的位置的运动，原始位置的熔化部分被固化以产生硅棒。 根据该方法，在不与圆筒的内壁面接触的状态下形成熔融硅，然后固化，从而得到不含有来自圆筒的材料的杂质的硅棒。

公开(公告)号：US5089082A

公开(公告)日：1992-02-18

申请号：US591703

申请日：1990-10-02

申请人： Peter Dreier ,  Wilfried von Ammon ,  Heinz Winterer

发明人： Peter Dreier ,  Wilfried von Ammon ,  Heinz Winterer

IPC分类号： C30B13/00 ,  C30B13/08 ,  C30B13/10 ,  C30B13/20 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B13/10 ,  C30B13/20

摘要： Silicon ingots, in particular, with diameters of approximately 75 mm and greater, can be produced by zone pulling with an oxygen content comparable to crucible-pulled material if a flat quartz element is brought into contact with the molten cap during the pulling operation. A quartz ring which is arranged concentrically beneath the induction heating coil and can be lowered from a rest position into its working position on the molten cap is suitable as a flat element. The ingot material obtained in this manner and also the silicon wafers produced therefrom combine the purity advantages of zone-pulled silicon with the beneficial gettering and hardening action of the incorporated oxygen which otherwise distinguishes only crucible-pulled silicon.

摘要翻译： 如果在牵引操作期间平坦的石英元件与熔融盖接触，则可以通过具有与坩埚拉动材料相当的氧含量的区域拉伸来生产直径大约为75mm或更大的硅锭。 同心地设置在感应加热线圈下方并且可以从静止位置降低到其熔融帽上的工作位置的石英环适合作为平坦元件。 以这种方式获得的锭材料以及由此产生的硅晶片将区域拉硅的纯度优点与引入的氧的有益的吸气和硬化作用相结合，否则仅区分坩埚拉硅。

公开(公告)号：US4797525A

公开(公告)日：1989-01-10

申请号：US76254

申请日：1987-07-21

申请人： Wolfgang Keller

发明人： Wolfgang Keller

IPC分类号： H05B6/32 ,  C30B13/20 ,  H05B6/40

CPC分类号： C30B13/20

摘要： When semiconductor rods during floating zone melting are doped with dopants having a very low distribution coefficient, the non-homogeneous temperature distribution causes a relatively strong non-homogeneous separation of the dopants (striation). The homogeneity can be improved through an after-heater (6) connected to the heating coil (4) and arranged on the side of the monocrystalline rod part (2), the heater being coaxial with the coil and connected parallel to it.

摘要翻译： 当浮置区熔化期间的半导体棒掺杂有具有非常低的分布系数的掺杂剂时，非均匀温度分布导致掺杂剂的相对强烈的非均匀分离（条纹）。 可以通过连接到加热线圈（4）并布置在单晶棒部分（2）侧面的后加热器（6）来改善均匀性，加热器与线圈同轴并且与其平行连接。

公开(公告)号：US4749837A

公开(公告)日：1988-06-07

申请号：US11067

申请日：1987-02-04

申请人： Wilfried von Ammon ,  Heinz Klinger

发明人： Wilfried von Ammon ,  Heinz Klinger

IPC分类号： C30B13/18 ,  C30B13/20 ,  H01L21/18 ,  H01L21/208 ,  H05B6/30 ,  H05B6/36 ,  H01F27/28 ,  H01F27/30

CPC分类号： H05B6/30 ,  C30B13/20 ,  H05B6/362

摘要： An induction heating coil for a zone pulling of semiconductor rods assures the disturbance-free performance of the pulling process even at the high power densities required for large rod diameters (approximately 10 to 12 cm). According to the invention, the arc-over paths between surfaces in the region of the coil slot, which are at differing potentials, are covered by one or more movable planar structures of temperature-stable insulating material which are introduced into the coil slot.

摘要翻译： 用于拉伸半导体棒的感应加热线圈即使在大棒直径（大约10cm至12cm）所需的高功率密度下也能确保牵引过程的无干扰性能。 根据本发明，处于不同电位的线圈槽区域中的表面之间的弧过路径被引入到线圈槽中的一个或多个温度稳定的绝缘材料的可移动的平面结构覆盖。

公开(公告)号：US4325777A

公开(公告)日：1982-04-20

申请号：US178063

申请日：1980-08-14

申请人： John C. Yarwood ,  Derek E. Tyler ,  Joseph Winter

发明人： John C. Yarwood ,  Derek E. Tyler ,  Joseph Winter

IPC分类号： C30B13/20 ,  C30B13/18

CPC分类号： C30B13/20 ,  Y10S117/90 ,  Y10S117/901 ,  Y10S117/917 ,  Y10T117/1084 ,  Y10T117/1088

摘要： A process and apparatus for reforming an improved strip (12) of material from a starting strip (16) of material. An electromagnetic device (18) maintains a floating molten zone (20) of the material in the starting strip (16) of the material and also forms the floating zone into the improved strip (12). The apparatus is provided with a susceptor device (80) arranged adjacent to the starting strip and operatively associated with the electromagnetic device (18) for initially heating the starting strip to be sufficiently conductive so that the starting strip can be directly heated by the electromagnetic device. Further, a control device (67) provides relative movement between the susceptor device (80) and the electromagnetic device by positioning the susceptor device in and out of the field of the electromagnetic device.

摘要翻译： 一种用于从材料的起始条（16）重整改进的材料条（12）的工艺和装置。 电磁装置（18）将材料的浮动熔融区（20）保持在材料的起始条（16）中，并且还将浮动区形成改进的条（12）。 设备设置有邻近起始带设置并与电磁装置（18）可操作地相关联的基座装置（80），用于初始加热起始带以使其具有足够的导电性，使起动带可以被电磁装置 。 此外，控制装置（67）通过将基座装置定位在电磁装置的外部和外部来提供感受器装置（80）和电磁装置之间的相对移动。

公开(公告)号：US4072556A

公开(公告)日：1978-02-07

申请号：US297903

申请日：1972-10-16

申请人： Otto Schmidt

发明人： Otto Schmidt

IPC分类号： C30B13/20 ,  B01J17/10

CPC分类号： C30B13/20 ,  Y10T117/1084 ,  Y10T117/1088

摘要： Device for crucible-free zone melting a crystalline rod, end-supported by holders, one of the holders being rotatable about the longitudinal axis thereof, includes an induction heating coil disposed between the end holders and coaxial to the longitudinal axis, the induction heating coil being energizable for heating a molten zone formed in the crystalline rod and comprising at least one winding disposed in a single plane, and a connecting lead to the induction heating coil, the connecting lead being formed as a partial winding and disposed outside the plane on a side thereof facing the rotatable holder; and method of operating the device.

摘要翻译： 用于无坩埚区域熔化结晶棒的装置，由支架端部支撑，其中一个保持器可围绕其纵向轴线旋转，包括设置在端部支架之间并与纵向轴线同轴的感应加热线圈，感应加热线圈 能够加热形成在所述结晶棒中的熔融区，并且包括设置在单个平面中的至少一个绕组，以及连接引线到所述感应加热线圈，所述连接引线形成为部分绕组并且设置在所述平面上 其面向可旋转保持器; 以及操作该设备的方法。