利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.01 秒)

    Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
    1.
    发明授权
    Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell 失效
    用于制造多晶硅的工艺和设备，以及用于制造太阳能电池用硅晶片的工艺

    公开(公告)号：US5961944A

    公开(公告)日：1999-10-05

    申请号：US894030

    申请日：1997-08-08

    申请人： Fukuo Aratani ,  Yoshiei Kato ,  Yasuhiko Sakaguchi ,  Noriyoshi Yuge ,  Hiroyuki Baba ,  Naomichi Nakamura ,  Kazuhiro Hanazawa

    发明人： Fukuo Aratani ,  Yoshiei Kato ,  Yasuhiko Sakaguchi ,  Noriyoshi Yuge ,  Hiroyuki Baba ,  Naomichi Nakamura ,  Kazuhiro Hanazawa

    IPC分类号： C01B33/021 ,  C30B11/00 ,  H01L31/18 ,  C01B33/02

    CPC分类号： C30B29/06 ,  C01B33/021 ,  C30B11/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

    摘要： An object of the present invention is to provide a process and apparatus for the continuous flow production of polycrystalline silicon from metallic silicon or silicon oxide as a raw material and also for the manufacture of a wafer by using it, which process and apparatus permit the mass production at a low cost. The above object can be attained by the manufacture of polycrystalline silicon and a silicon wafer for a solar cell by the following steps: (A) smelting metallic silicon under reduced pressure, carrying out solidification for the removal of the impurity components from the melt, thereby obtaining a first ingot, (B) removing the impurity concentrated portion from the ingot by cutting, (C) re-melting the remaining portion, removing boron and carbon from the melt by oxidizing under an oxidizing atmosphere, and blowing a mixed gas of argon and water to carry out deoxidization, (D) casting the deoxidized melt into a mold, and carried out directional solidification to obtain a second ingot, and (E) removing the impurity concentrated portion of the ingot obtained by directional solidification by cutting.

    摘要翻译： PCT No.PCT / JP96 / 02965 Sec。 371日期：1997年8月8日 102（e）日期1997年8月8日PCT PCT 1996年10月14日PCT公布。 公开号WO98 / 16466 日本1998年4月23日本发明的目的是提供一种用于从作为原料的金属硅或氧化硅连续流动生产多晶硅并且还通过使用它来制造晶片的方法和装置，该方法 并且设备允许以低成本进行批量生产。 上述目的可以通过以下步骤制造太阳能电池的多晶硅和硅晶片来实现：（A）在减压下熔融金属硅，进行凝固以从熔体中除去杂质成分，由此 （B）通过切割从锭中除去杂质浓缩部分，（C）再熔融剩余部分，在氧化气氛下氧化从熔体中除去硼和碳，并吹入氩气的混合气体 和水进行脱氧，（D）将脱氧后的熔体铸造到模具中，进行定向凝固以获得第二锭，（E）通过切割去除通过定向凝固获得的锭的杂质浓缩部分。

    Production of high-purity silicon ingot
    2.
    发明授权
    Production of high-purity silicon ingot 失效
    生产高纯硅锭

    公开(公告)号：US5510095A

    公开(公告)日：1996-04-23

    申请号：US139633

    申请日：1993-10-19

    申请人： Fukuo Aratani ,  Kyojiro Kaneko

    发明人： Fukuo Aratani ,  Kyojiro Kaneko

    IPC分类号： C01B33/037 ,  B22D11/11 ,  C30B11/00 ,  C30B13/00 ,  H01L21/208 ,  H01L31/04 ,  C30B15/12 ,  C30B13/20

    CPC分类号： C30B11/00 ,  B22D11/11 ,  C30B13/00 ,  C30B29/06 ,  Y02E10/546

    摘要： A process for producing high-purity silicon for solar cells continuously directly from inexpensive silicon containing a comparatively large amount of impurities. This process comprises melting continuously supplied raw material silicon in a bottomless crucible placed in an induction coil, while blowing a hot plasma gas incorporated with an oxygen-containing substance on the surface of the melt for purification, and continuously discharging the solidified silicon downward from said bottomless crucible, with at least an axial part of said bottomless crucible being divided into a plurality of electrically conductive pieces spaced circumferentially.

    摘要翻译： 从含有相当大量杂质的廉价硅连续地直接生产用于太阳能电池的高纯度硅的方法。 该方法包括将放置在感应线圈中的无底坩埚中的连续供给的原料硅熔化，同时在熔融物表面上吹入含有含氧物质的热等离子体气体进行净化，并将固化硅从所述 无底坩埚，其中所述无底坩埚的至少轴向部分被分成周向间隔开的多个导电件。

    Method and apparatus for preparing high-purity metallic silicon
    3.
    发明授权
    Method and apparatus for preparing high-purity metallic silicon 失效
    制备高纯度金属硅的方法和装置

    公开(公告)号：US5244639A

    公开(公告)日：1993-09-14

    申请号：US753005

    申请日：1991-08-23

    申请人： Fukuo Aratani ,  Tsuyoshi Fukutake

    发明人： Fukuo Aratani ,  Tsuyoshi Fukutake

    IPC分类号： C01B33/021 ,  C01B33/023 ,  C01B33/025

    CPC分类号： C01B33/023 ,  C01B33/021 ,  C01B33/025

    摘要： High-yield preparation of high-purity metallic silicon at is performed by subjecting a stream of oxides of silicon (e.g. in an aerosol) to reaction heat in the presence of a mixture of a material of the group including silicon carbide and silicon dioxide; and a material of the group including carbon and carbon-containing substance. Preferably, silicon oxide produced by the reaction is scavenged from exhaust gas leaving the reaction chamber, re-condensed, and returned to the reaction chamber.

    摘要翻译： 高纯度金属硅的高产率制备方法是通过在含碳化硅和二氧化硅的基团的材料的混合物的存在下使硅（例如气溶胶）的氧化物流进行反应热; 和包含碳和含碳物质的组的材料。 优选地，通过反应产生的氧化硅从离开反应室的废气中被清除，再冷凝并返回到反应室。

    Method and apparatus for purifying silicon
    5.
    发明授权
    Method and apparatus for purifying silicon 失效
    用于净化硅的方法和装置

    公开(公告)号：US5182091A

    公开(公告)日：1993-01-26

    申请号：US706990

    申请日：1991-05-29

    申请人： Noriyoshi Yuge ,  Hiroyuki Baba ,  Fukuo Aratani

    发明人： Noriyoshi Yuge ,  Hiroyuki Baba ,  Fukuo Aratani

    IPC分类号： C01B33/037 ,  H01L31/04

    CPC分类号： C01B33/037

    摘要： Disclosed herein are a method and apparatus for purifying silicon, which are suitable for economical and mass production of high-purity silicon for solar cells from regular-grade silicon containing boron and carbon in large quantities. The method comprises directing a plasma jet stream of an inert gas toward the surface of molten silicon held in a container lined with silica or a silica-based refractory. For improved purification, the inert gas as the plasma gas is mixed with 0.1-10 vol % steam and/or less than 1 g of silica powder per liter of the inert gas at normal state. Alternatively, the container may have a bottom opening and is provided with an electrode having a cooling means underneath the bottom of the container, with the electrode and the cathode of the plasma torch connected to a power source for plasma generation, so that the plasma jet and electron beam are directed toward the surface of molten silicon.