发明授权
- 专利标题： Substrate for semiconductor apparatus
- 专利标题（中）： 半导体装置用基板
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申请号： US368657申请日： 1995-01-04
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公开(公告)号： US5525428A公开(公告)日： 1996-06-11
- 发明人: Mituo Osada , Yoshinari Amano , Nobuo Ogasa , Akira Ohtsuka
- 申请人： Mituo Osada , Yoshinari Amano , Nobuo Ogasa , Akira Ohtsuka
- 申请人地址： JPX Osaka
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX57-131026 19820726
- 主分类号： B22F3/24
- IPC分类号： B22F3/24 ; H01L21/52 ; H01L21/58 ; H01L23/14 ; H01L23/373 ; B22F7/04
摘要：
This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
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