公开(公告)号：US5563101A

公开(公告)日：1996-10-08

申请号：US368636

申请日：1995-01-04

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  H01L21/60

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

公开(公告)号：US5708959A

公开(公告)日：1998-01-13

申请号：US635651

申请日：1996-04-22

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  B22F3/26 ,  B22F7/04

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

摘要翻译： 本发明涉及在集成电路装置中加载半导体芯片的半导体装置用基板，其特征在于，含有2〜30重量％ 使用钨和/或钼中的％作为具有能够有效地辐射从负载的半导体芯片显影的热的热辐射的基板和与除了基板以外的半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5525428A

公开(公告)日：1996-06-11

申请号：US368657

申请日：1995-01-04

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  B22F7/04

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

摘要翻译： 本发明涉及用于在集成电路装置中加载半导体芯片的半导体装置用基板，其特征在于，含有2〜30重量％ 使用钨和/或钼中的％作为具有能够有效地辐射从负载的半导体芯片显影的热的热辐射的基板和与除了基板以外的半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5409864A

公开(公告)日：1995-04-25

申请号：US284277

申请日：1994-08-02

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  H01L21/60

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

摘要翻译： 本发明涉及用于将半导体芯片安装在集成电路中的基板，其中含有2-30重量％的铜的烧结体 ％和钨和/或钼用作有效辐射从其上安装的半导体芯片展开的热的衬底，并且所述衬底具有与半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5086333A

公开(公告)日：1992-02-04

申请号：US382056

申请日：1989-07-13

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

摘要翻译： 本发明涉及用于将半导体芯片安装在集成电路中的基板，其中含有2-30重量％的铜的烧结体 ％和钨和/或钼用作有效辐射从其上安装的半导体芯片展开的热的衬底，并且所述衬底具有与半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US4480013A

公开(公告)日：1984-10-30

申请号：US398871

申请日：1982-07-14

申请人： Yoshihiko Doi ,  Nobuo Ogasa ,  Akira Ohtsuka ,  Tadashi Igarashi

发明人： Yoshihiko Doi ,  Nobuo Ogasa ,  Akira Ohtsuka ,  Tadashi Igarashi

IPC分类号： H01L21/52 ,  H01L23/14 ,  H01L23/31 ,  H01L23/373 ,  H01L23/495 ,  H01L23/498 ,  H05K1/05 ,  C23C17/00

CPC分类号： H01L23/49827 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/49534 ,  H05K1/053 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/181 ,  Y10T428/125 ,  Y10T428/12507 ,  Y10T428/12514 ,  Y10T428/12521 ,  Y10T428/12535 ,  Y10T428/12569 ,  Y10T428/12736 ,  Y10T428/12764

摘要： The invention relates to semiconductor chip mounting substrate for use in semiconductor apparatus, wherein metal material or multi-laminated metal material is coated on its surface and/or lateral faces with thin film of insulated inorganic matter in order to obtain an insulated substrate not only capable of efficiently radiating the heat developed in the semiconductor chip but also having thermal expansion coefficient approximate to that of the semiconductor chip, or further coated with film of Cu or Al so that the substrate is provided with high thermal conductivity and required thermal expansion characteristics thereby enabling to produce semiconductor apparatus highly effective for the acceleration of increase of density, reduction of size and improvement of radiation of IC.

摘要翻译： 本发明涉及用于半导体装置的半导体芯片安装基板，其中金属材料或多层金属材料在其表面和/或侧面上涂覆有绝缘无机物质的薄膜，以便获得绝缘基板，不仅能够 有效地辐射在半导体芯片中显影的热量，而且具有接近于半导体芯片的热膨胀系数，或者进一步涂覆有Cu或Al的膜，使得衬底具有高导热性和所需的热膨胀特性，从而使得 生产半导体装置，对于加速密度的增加，尺寸的减小和IC的辐射的改善而言是非常有效的。

公开(公告)号：US07343401B2

公开(公告)日：2008-03-11

申请号：US09813962

申请日：2001-03-22

申请人： Ikuko Tachibana ,  Akira Ohtsuka ,  Hideki Ise ,  Kazuhiro Matsushita ,  Hideki Yoshida ,  Kazuhiko Itoh

发明人： Ikuko Tachibana ,  Akira Ohtsuka ,  Hideki Ise ,  Kazuhiro Matsushita ,  Hideki Yoshida ,  Kazuhiko Itoh

IPC分类号： G06F15/177

CPC分类号： G06F11/2294 ,  G06F11/0709 ,  G06F11/0748

摘要： A remote maintenance apparatus is provided. The remote maintenance apparatus includes: a first obtaining part which obtains configuration information of terminals sent from the terminals; a storing part which stores the configuration information while bringing the configuration information into correspondence with generation information; a second obtaining part which obtains configuration information of a failed terminal; and an extraction part which extracts difference information between configuration information obtained by the second obtaining part and configuration information stored in the storing part which has older generation.

摘要翻译： 提供远程维护设备。 远程维护装置包括：第一获取部，其获得从终端发送的终端的配置信息; 存储部，其在将所述配置信息与生成信息对应的同时存储所述配置信息; 获取故障终端的配置信息的第二获取部; 以及提取部，其提取由第二获取部获得的配置信息与存储在具有较早一代的存储部中的配置信息之间的差分信息。

公开(公告)号：US4588836A

公开(公告)日：1986-05-13

申请号：US526031

申请日：1983-08-24

申请人： Kunio Matsumoto ,  Yoshitaka Kagimoto ,  Tsutomu Hirata ,  Susumu Watanabe ,  Akira Ohtsuka ,  Kiyoharu Takahashi

发明人： Kunio Matsumoto ,  Yoshitaka Kagimoto ,  Tsutomu Hirata ,  Susumu Watanabe ,  Akira Ohtsuka ,  Kiyoharu Takahashi

IPC分类号： C12Q1/26 ,  C12Q1/37 ,  C12Q1/52 ,  C07C101/72 ,  C12Q1/48

CPC分类号： C12Q1/52 ,  C12Q1/26 ,  C12Q1/37 ,  C12Q2337/10 ,  Y10S435/817

摘要： A compound of the formula ##STR1## wherein R is L-leucyl or .gamma.-L-glutamyl and X and Y are halogen and are the same or different, or a salt thereof. These compounds are useful as synthetic substrates for assaying peptidase activity.

摘要翻译： 其中R为L-亮氨酰或γ--L-谷氨酰基且X和Y为卤素并且相同或不同，或其盐的式IMA化合物。 这些化合物可用作测定肽酶活性的合成底物。

公开(公告)号：US5758686A

公开(公告)日：1998-06-02

申请号：US864846

申请日：1997-05-29

申请人： Akira Ohtsuka ,  Chosei Kaseda

发明人： Akira Ohtsuka ,  Chosei Kaseda

IPC分类号： G01M13/00 ,  G05B23/02 ,  G05D16/20 ,  F16K31/12

CPC分类号： G05D7/005 ,  Y10T137/7762 ,  Y10T137/7769 ,  Y10T137/777

摘要： In a control valve abnormality detection method of detecting abnormality in a control valve, a characteristic expression representing the relationship between three factors in the normal state of the control valve is pre-set. The three factors consist of the displacement of the valve stem, a driving force from the valve stem driving device which changes upon displacement of the valve stem, and the force of the fluid which acts on one end of the valve stem through the valve. The three factors are detected on the basis of measurement result. On the basis of two factors selected from the detected three factors, the estimated value of one factor, which is not selected, is calculated by using the pre-set characteristic expression. The detected value of one factor, which is not selected, is compared with the calculated estimated value, and abnormality in the control valve is determined on the basis of the comparison result. A control valve abnormality detection apparatus is also disclosed.

摘要翻译： 在检测控制阀的异常的控制阀异常检测方法中，预先设定代表控制阀的正常状态的三个因素之间的关系的特征表达式。 这三个因素包括阀杆的位移，来自阀杆驱动装置的驱动力，其在阀杆的位移上变化，以及通过阀门作用在阀杆的一端上的流体的力。 在测量结果的基础上检测出三个因素。 基于从检测到的三个因素中选择的两个因素，通过使用预设的特征表达式来计算未选择的一个因子的估计值。 将未选择的一个因子的检测值与计算出的估计值进行比较，并且基于比较结果确定控制阀中的异常。 还公开了一种控制阀异常检测装置。

公开(公告)号：US5750879A

公开(公告)日：1998-05-12

申请号：US864242

申请日：1997-05-28

申请人： Akira Ohtsuka ,  Chosei Kaseda

发明人： Akira Ohtsuka ,  Chosei Kaseda

IPC分类号： G01M13/00 ,  F15B20/00 ,  G01N19/02 ,  G01N19/04

CPC分类号： G01N19/02

摘要： In a stick-slip detection method, the displacement of a movable member having a slidable contact portion is detected. A first quantity of state is calculated on the basis of the detected displacement of the movable member. A second quantity of state, which can be estimated from the first quantity of state, is calculated on the basis of the detected displacement of the movable member. An estimated quantity of state is calculated by estimating a second quantity of state from the calculated first quantity of state by using the relationship between the first and second predetermined quantities of state which are obtained from the displacement of the movable member in a normal sliding state. The calculated second quantity of state is compared with the estimated quantity of state to determine an abnormal sliding operation of the movable member on the basis of the comparison result. A stick-slip detection apparatus is also disclosed.

摘要翻译： 在粘滑检测方法中，检测具有可滑动接触部分的可移动部件的位移。 基于检测到的可动构件的位移来计算第一数量的状态。 基于检测到的可动构件的位移来计算可以从第一数量状态估计的第二数量的状态。 通过使用从正常滑动状态下的可动件的位移获得的第一和第二预定状态量之间的关系，通过从计算的第一状态量估计第二数量的状态来计算估计的状态量。 将计算出的第二状态量与估计的状态量进行比较，以根据比较结果确定可动构件的异常滑动操作。 还公开了粘滑检测装置。