公开(公告)号：US5086333A

公开(公告)日：1992-02-04

申请号：US382056

申请日：1989-07-13

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

摘要翻译： 本发明涉及用于将半导体芯片安装在集成电路中的基板，其中含有2-30重量％的铜的烧结体 ％和钨和/或钼用作有效辐射从其上安装的半导体芯片展开的热的衬底，并且所述衬底具有与半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5708959A

公开(公告)日：1998-01-13

申请号：US635651

申请日：1996-04-22

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  B22F3/26 ,  B22F7/04

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

摘要翻译： 本发明涉及在集成电路装置中加载半导体芯片的半导体装置用基板，其特征在于，含有2〜30重量％ 使用钨和/或钼中的％作为具有能够有效地辐射从负载的半导体芯片显影的热的热辐射的基板和与除了基板以外的半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5563101A

公开(公告)日：1996-10-08

申请号：US368636

申请日：1995-01-04

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  H01L21/60

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

公开(公告)号：US5525428A

公开(公告)日：1996-06-11

申请号：US368657

申请日：1995-01-04

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  B22F7/04

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

摘要翻译： 本发明涉及用于在集成电路装置中加载半导体芯片的半导体装置用基板，其特征在于，含有2〜30重量％ 使用钨和/或钼中的％作为具有能够有效地辐射从负载的半导体芯片显影的热的热辐射的基板和与除了基板以外的半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5409864A

公开(公告)日：1995-04-25

申请号：US284277

申请日：1994-08-02

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtsuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373 ,  H01L21/60

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.

摘要翻译： 本发明涉及用于将半导体芯片安装在集成电路中的基板，其中含有2-30重量％的铜的烧结体 ％和钨和/或钼用作有效辐射从其上安装的半导体芯片展开的热的衬底，并且所述衬底具有与半导体芯片和其它外壳材料相似的热膨胀系数。

公开(公告)号：US5099310A

公开(公告)日：1992-03-24

申请号：US297935

申请日：1989-01-17

申请人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtusuka

发明人： Mituo Osada ,  Yoshinari Amano ,  Nobuo Ogasa ,  Akira Ohtusuka

IPC分类号： B22F3/24 ,  H01L21/52 ,  H01L21/58 ,  H01L23/14 ,  H01L23/373

CPC分类号： H01L24/83 ,  B22F3/24 ,  H01L23/142 ,  H01L23/3733 ,  H01L24/29 ,  H01L2224/29 ,  H01L2224/29298 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  Y10T29/4913 ,  Y10T428/12014 ,  Y10T428/12056 ,  Y10T428/12493

摘要： This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.

公开(公告)号：US07547412B2

公开(公告)日：2009-06-16

申请号：US10533087

申请日：2003-10-28

申请人： Masayuki Itoh ,  Tadashi Arikawa ,  Norio Hirayama ,  Yoshinari Amano ,  Nobuyuki Saitoh

发明人： Masayuki Itoh ,  Tadashi Arikawa ,  Norio Hirayama ,  Yoshinari Amano ,  Nobuyuki Saitoh

IPC分类号： C22C27/04 ,  B22F7/02 ,  H01L29/12 ,  H01L21/00

CPC分类号： C22C9/00 ,  C22C1/0425 ,  C22C1/045 ,  C22C27/04 ,  H01L23/3736 ,  H01L2224/32225 ,  H01L2224/48227 ,  Y10T428/12028 ,  Y10T428/12528

摘要： A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.

摘要翻译： 复合材料是Cu含量为30〜70重量％的Mo-Cu系复合材料，含有铜合金相和Mo-Cu系复合相。 铜池相的含量为10-50重量％。 散热构件使用复合材料。

公开(公告)号：US06233311B1

公开(公告)日：2001-05-15

申请号：US09258077

申请日：1999-02-26

申请人： Masayuki Itoh ,  Koji Asahi ,  Mitsuo Osada ,  Yoshinari Amano ,  Tomohiro Takida

发明人： Masayuki Itoh ,  Koji Asahi ,  Mitsuo Osada ,  Yoshinari Amano ,  Tomohiro Takida

IPC分类号： H01J3510

CPC分类号： H01J35/10 ,  H01J2235/081 ,  H01J2235/085 ,  H01J2235/086

摘要： Provided are a high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.

公开(公告)号：US4072515A

公开(公告)日：1978-02-07

申请号：US485579

申请日：1974-07-03

申请人： Kenya Motoyoshi ,  Masahiro Kume ,  Yoshinari Amano

发明人： Kenya Motoyoshi ,  Masahiro Kume ,  Yoshinari Amano

IPC分类号： C22C5/06 ,  C22C32/00 ,  H01B1/02 ,  H01H1/023 ,  H01H1/0237

CPC分类号： H01H1/02372

摘要： This invention relates to an electrical contact material of silver-indium oxide type, which is produced by the internal oxidation of an alloy consisting of 6-15% by weight indium, at least one of 0.2-8% by weight tin and 0.01-1% by weight magnesium and the balance silver. This alloy may contain further 0.01-1% by weight of nickel.

摘要翻译： 本发明涉及一种银 - 氧化铟类型的电接触材料，其通过由6-15重量％的铟组成的合金的内部氧化，至少一个0.2-8重量％的锡和0.01-1 重量％的镁和余量的银。 该合金还可以含有0.01-1重量％的镍。

公开(公告)号：US4050930A

公开(公告)日：1977-09-27

申请号：US667373

申请日：1976-03-16

申请人： Kenya Motoyoshi ,  Masahiro Kume ,  Yoshinari Amano

发明人： Kenya Motoyoshi ,  Masahiro Kume ,  Yoshinari Amano

IPC分类号： C22C5/06 ,  H01B1/02 ,  H01H1/023 ,  H01H1/0237 ,  H01H11/04

CPC分类号： H01H1/02372 ,  C22C5/06

摘要： A material for an electrical contact is produced by an internal oxidation of an alloy consisting of 1-15% by weight of indium, 0.5-12% by weight of tin, 0.01-5% by weight of one selected from manganese and molybdenum, and the balance silver. In a modification an iron group element may be mixed in a range less than 0.5% by weight.

摘要翻译： 用于电接触的材料通过由1-15重量％的铟，0.5-12重量％的锡，0.01-5重量％的选自锰和钼的合金的内部氧化制备，以及 余额银。 在一种变型中，铁族元素可以在小于0.5重量％的范围内混合。