发明授权
- 专利标题： Deposited film forming apparatus
- 专利标题（中）： 沉积成膜装置
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申请号： US398071申请日： 1995-03-03
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公开(公告)号： US5527396A公开(公告)日： 1996-06-18
- 发明人: Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
- 申请人： Keishi Saitoh , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Jinsho Matsuyama , Toshimitsu Kariya , Yuzou Kouda , Ryou Hayashi , Masahiko Tonogaki
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-196047 19920630
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/511 ; C23C16/517 ; C30B25/02 ; C30B25/16 ; G03G5/082 ; H01L21/205 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; H01L31/04 ; H01L31/052 ; H01L31/075 ; H01L31/20 ; C23C16/00
摘要：
A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.
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