发明授权
- 专利标题: Monolithically integrated storage device
- 专利标题(中): 单片集成存储设备
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申请号: US347653申请日: 1994-11-30
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公开(公告)号: US5535157A公开(公告)日: 1996-07-09
- 发明人: Giovanni Campardo , Raffaele Costa , Piero Torricelli
- 申请人: Giovanni Campardo , Raffaele Costa , Piero Torricelli
- 申请人地址: ITX Milan
- 专利权人: SGS-Thomson Microelectronics S.r.l.
- 当前专利权人: SGS-Thomson Microelectronics S.r.l.
- 当前专利权人地址: ITX Milan
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/02 ; G11C16/04 ; G11C16/16 ; G11C16/22 ; G11C7/00
摘要:
An integrated device with electrically programmable and erasable memory cells, including one time programmable (OTP) read-only memory cells. A matrix of user memory cells is added at least one row of OTP cells sharing the column selection lines with the other cells. Similarly to the other cells, these have a selection terminal connected to a row selection line. The source terminals of such OTP cells in the row are connected to the device ground through a common selection transistor which is driven from the same row selection line.
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