发明授权
US5539231A Dynamic random access memory device having reduced stepped portions
失效
动态随机存取存储器件具有减小的阶梯部分
- 专利标题： Dynamic random access memory device having reduced stepped portions
- 专利标题（中）： 动态随机存取存储器件具有减小的阶梯部分
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申请号： US397341申请日： 1995-03-02
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公开(公告)号： US5539231A公开(公告)日： 1996-07-23
- 发明人: Toshifumi Suganaga , Eiichi Ishikawa
- 申请人： Toshifumi Suganaga , Eiichi Ishikawa
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-158779 19940711
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/60 ; H01L21/768 ; H01L21/8242 ; H01L23/522 ; H01L23/532 ; H01L27/10 ; H01L27/108 ; H01L27/148 ; H01L29/768
摘要：
A first conductive layer and a second conductive layer are formed apart from each other on a surface of a semiconductor substrate. A first contact hole for exposing a surface of first conductive layer is formed in an interlayer insulating film. A first interconnection layer is buried in first contact hole so as to be in contact with first conductive layer. The position of the surface of first interconnection layer is the same as or lower than the surface of interlayer insulating film. The surface of first interconnection layer is covered with an insulating film. A second contact hole for exposing a surface of second conductive layer is provided in interlayer insulating film. A second conductive layer is connected to second conductive layer through second contact hole.
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