发明授权
- 专利标题： Oxide cathode employing Ba evaporation restraining layer
- 专利标题（中）： 采用Ba蒸发抑制层的氧化物阴极
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申请号： US511838申请日： 1995-08-07
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公开(公告)号： US5548184A公开(公告)日： 1996-08-20
- 发明人: Kwi-seok Choi , Jong-seo Choi , Kyung-cheon Shon , Gyu-nam Ju , Sang-won Lee
- 申请人： Kwi-seok Choi , Jong-seo Choi , Kyung-cheon Shon , Gyu-nam Ju , Sang-won Lee
- 申请人地址： KRX Kyungki-do
- 专利权人： Samsung Display Devices Co., Ltd.
- 当前专利权人： Samsung Display Devices Co., Ltd.
- 当前专利权人地址： KRX Kyungki-do
- 优先权： KRX93-16347 19930823
- 主分类号： H01J1/20
- IPC分类号： H01J1/20 ; H01J1/13 ; H01J1/14 ; H01J1/144 ; H01J29/04 ; H01J29/48 ; H01J19/06
摘要：
An oxide cathode is provided including a metal base, an electron emissive material layer formed on the metal base and having barium as a main component, a heater for heating the electron emissive material layer, and a Ba evaporation restraining layer having a thickness ranging from 10.ANG. to 10,000.ANG. and consisting of at least one titanium compound formed on the electron emissive material layer.
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