发明授权
- 专利标题: Magnetoresistance effect element
- 专利标题(中): 磁阻效应元件
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申请号: US144258申请日: 1993-11-01
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公开(公告)号: US5549978A公开(公告)日: 1996-08-27
- 发明人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
- 申请人: Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX4-315648 19921030; JPX5-078919 19930312; JPX5-053605 19930315; JPX5-053612 19930315
- 主分类号: G11B5/39
- IPC分类号: G11B5/39 ; H01F10/32 ; H01L43/08 ; H01L43/10 ; G11B5/66 ; B32B9/00
摘要:
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.
公开/授权文献
- US5966336A Semiconductor device having redundancy circuit 公开/授权日:1999-10-12
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