公开(公告)号：US06369992B1

公开(公告)日：2002-04-09

申请号：US08909687

申请日：1997-08-12

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3977 ,  G11B2005/3996

摘要： A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.

摘要翻译： 磁阻效应头记录和再现记录的磁性材料。 磁阻效应头具有连接到一对引线的磁阻效应膜。 此外，具有第一和第二磁轭构件的磁轭将来自记录介质的信号磁场引导到磁阻效应膜。 磁阻效应头被构造成使得第一和第二磁轭构件具有面向记录介质的表面。 第一和第二磁轭构件的表面之间具有磁隙。 此外，磁阻效应膜从面向介质的表面凹陷预定距离。 此外，第一和第二磁轭构件几乎与从记录介质到第一磁轭构件，磁阻效应膜和第二磁轭构件的磁通流平行排列。

公开(公告)号：US6115216A

公开(公告)日：2000-09-05

申请号：US780328

申请日：1997-01-08

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/265

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

摘要翻译： 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US5583474A

公开(公告)日：1996-12-10

申请号：US248679

申请日：1994-05-25

申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC分类号： G05F1/40 ,  H01F5/00 ,  H01F17/00 ,  H01F27/30 ,  H01F41/00

CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

公开(公告)号：US5187561A

公开(公告)日：1993-02-16

申请号：US545870

申请日：1990-06-29

申请人： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

发明人： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

IPC分类号： C30B25/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/532 ,  H01L27/04 ,  H01L29/41

CPC分类号： H01L21/28556 ,  H01L21/32051 ,  H01L23/532 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002

摘要： The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.

公开(公告)号：US09353458B2

公开(公告)日：2016-05-31

申请号：US12225570

申请日：2007-02-05

申请人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC分类号： C30B23/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  H01J37/32 ,  H01J37/34

CPC分类号： C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

摘要： The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

摘要翻译： 本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石， 用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。 通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al 2 O 3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺 通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。

公开(公告)号：US06362940B1

公开(公告)日：2002-03-26

申请号：US09520633

申请日：2000-03-07

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996

摘要： A recording-reproducing magnetic head comprising a magnetoresistance effect reproducing head and an inductive recording head. The magnetoresistance effect reproducing head having a magnetoresistance effect element and the inductive recording head having a lower magnetic core, an upper magnetic core, coils sandwiched between the lower and upper magnetic cores at their mid-parts, and a recording magnetic cores at leading end parts. The leading end parts of the lower and upper magnetic cores having a protruding part protruding to the recording magnetic gap layer and the upper magnetic core having a continuous magnetic body which extends from the protruding part to the mid-part. A center line of the protruding part of the lower magnetic core, which extends in a track length direction on a surface opposite a medium, intersecting the protruding part of the upper magnetic core.

摘要翻译： 一种记录再现磁头，包括磁阻效应再现头和感应记录头。 具有磁阻效应元件的磁电阻效应再现头和具有下磁芯，上磁芯，夹在下磁芯和上磁心之间的线圈的感应记录头及其前端部的记录磁芯 。 下磁芯和上磁芯的前端部具有突出部分，突出部分到记录磁隙层，上磁芯具有从突出部分延伸到中间部分的连续磁体。 下磁芯的突出部分的中心线，其在与介质相对的表面上的轨道长度方向上延伸，与上磁芯的突出部分相交。

公开(公告)号：US06198597B1

公开(公告)日：2001-03-06

申请号：US09153858

申请日：1998-09-16

申请人： Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

发明人： Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

IPC分类号： G11B531

CPC分类号： G11B5/3113 ,  G11B5/3116 ,  G11B5/3163

摘要： A thin-film magnetic head comprises a magnetic gap disposed to be positioned on an air bearing surface of the magnetic head, a pair of magnetic poles disposed to hold the magnetic gap therebetween, and a coil positioned between the pair of the magnetic poles to intersect the magnetic poles, wherein at least one of the magnetic poles being composed of a T-shaped magnetic pole, the T-shaped magnetic pole comprising a front part of a magnetic pole contacting with the magnetic gap, an intermediate part of a magnetic pole lying on the front part, and a rear part of a magnetic pole lying on the intermediate part, wherein a width of the front part roughly defines a track width, the rear part has a wider width in a direction of track width than a width of the front part, and the intermediate part contacts with the rear part at an entire width of the rear part at the air bearing surface and has a narrower width at a contacting face with the front part than the width of the rear part.

摘要翻译： 薄膜磁头包括设置在磁头的空气轴承表面上的磁隙，设置成保持磁隙的一对磁极和位于一对磁极之间的线圈，以相交 磁极，其中至少一个磁极由T形磁极组成，T形磁极包括与磁隙接触的磁极的前部，位于磁极的中间部分 在前部的前部和位于中间部的磁极的后部，前部的宽度大致限定轨道宽度，后部在轨道宽度方向上的宽度比宽度宽 前部，并且中间部分在后部的空气轴承表面的整个宽度处与后部接触，并且在与前部的接触面处具有比后部的宽度更窄的宽度。

公开(公告)号：US6056996A

公开(公告)日：2000-05-02

申请号：US358465

申请日：1999-07-22

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B5/31 ,  G11B5/39 ,  B05D5/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

摘要翻译： 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US5652054A

公开(公告)日：1997-07-29

申请号：US500365

申请日：1995-07-10

申请人： Akira Kikitsu ,  Katsutaro Ichihara ,  Hitoshi Iwasaki ,  Atsuhito Sawabe

发明人： Akira Kikitsu ,  Katsutaro Ichihara ,  Hitoshi Iwasaki ,  Atsuhito Sawabe

IPC分类号： G11B5/64

CPC分类号： G11B5/653 ,  G11B5/656 ,  Y10S428/90 ,  Y10T428/256

摘要： This invention provides a magnetic recording medium having a magnetic thin film made of magnetic metal grains and a nonmagnetic matrix, wherein the hardness of the nonmagnetic matrix is larger than that of the magnetic metal grains, the magnetic metal grains have shape magnetic anisotropy and magneto-crystalline anisotropy, and in the nonmagnetic matrix the content of a magnetic metal element in a central portion between the magnetic metal grains is 20 atomic % or less. This invention also provides a magnetic recording/reproduction apparatus including a magnetic recording medium consisting of a nonmagnetic matrix, which is continuously present in the direction of film thickness and the in-plane direction of a magnetic thin film, and magnetic metal grains held in the nonmagnetic matrix, and a magnetic head for reproducing a signal from the magnetic recording medium by using a resistance change caused by a magnetic field.

摘要翻译： 本发明提供一种具有由磁性金属颗粒和非磁性基体制成的磁性薄膜的磁记录介质，其中非磁性基体的硬度大于磁性金属颗粒的硬度，磁性金属颗粒具有磁各向异性和磁 - 晶体各向异性，在非磁性基体中，磁性金属颗粒之间的中心部分的磁性金属元素的含量为20原子％以下。 本发明还提供一种磁记录/再现装置，其包括磁性记录介质，该磁记录介质由薄膜厚度方向和磁性薄膜的面内方向连续存在的非磁性矩阵组成，并且磁性金属颗粒保持在 非磁性矩阵，以及用于通过使用由磁场引起的电阻变化来再现来自磁记录介质的信号的磁头。

公开(公告)号：US5110405A

公开(公告)日：1992-05-05

申请号：US363788

申请日：1989-06-09

申请人： Atsuhito Sawabe ,  Tadao Inuzuka

发明人： Atsuhito Sawabe ,  Tadao Inuzuka

IPC分类号： C01B31/06 ,  C30B25/00 ,  C30B25/10 ,  C30B29/04

CPC分类号： C30B25/00 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/90

摘要： A method of manufacturing single-crystal diamond particles, according to the present invention, comprises the steps of introducing a reaction gas containing at least one organic compound into a reaction vessel having an anode and a cathode, producing a plasma by DC discharge caused between the anode and the cathode, and vibrating inorganic single-crystal particles in the plasma and depositing single-crystal diamond on the surface of the single-crystal particles. According to the method of the present invention, single-crystal diamond particles can be manufactured at high growth rate and with excellent reproducibility.

摘要翻译： 根据本发明的制造单晶金刚石颗粒的方法包括以下步骤：将含有至少一种有机化合物的反应气体引入具有阳极和阴极的反应容器中，通过在 阳极和阴极，并在等离子体中振动无机单晶颗粒，并在单晶颗粒的表面上沉积单晶金刚石。 根据本发明的方法，可以以高生长速度和优异的再现性制造单晶金刚石颗粒。