发明授权
- 专利标题： Magnetoresistance effect element with improved antiferromagnetic layer
- 专利标题（中）： 具有改进反铁磁层的磁阻效应元件
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申请号： US204676申请日： 1994-03-02
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公开(公告)号： US5552949A公开(公告)日： 1996-09-03
- 发明人: Susumu Hashimoto , Yuzo Kamiguchi , Hitoshi Iwasaki , Atsuhito Sawabe , Masashi Sahashi
- 申请人： Susumu Hashimoto , Yuzo Kamiguchi , Hitoshi Iwasaki , Atsuhito Sawabe , Masashi Sahashi
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX5-043025 19930303
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01L43/08
摘要：
An exchange coupled film is presented, which has an antiferromagnetic film being made of N.sub.100-z Mn.sub.z (where N is at least one selected from the group consisting of Cu, Ru, Rh, Re, Pd, Pt, Ag, Au, Os, and Ir; and 24.ltoreq.z.ltoreq.75) and having a tetragonal crystalline structure or being made of Cr.sub.100-x M.sub.x (where M is at least one selected from the group consisting of elements of group 3b of periodic table, Cu, Ru, Rh, Re, Pt, Pd, Ag, Au, Os, Ir, Mn, Fe, Co, and V; and x is in the range of 0
公开/授权文献
- US06092568A Product valve complex for dual stream filling system 公开/授权日：2000-07-25
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