发明授权
- 专利标题: Method of making a magnetoresistive sensor
- 专利标题(中): 制造磁阻传感器的方法
-
申请号: US421543申请日: 1995-04-13
-
公开(公告)号: US5554265A公开(公告)日: 1996-09-10
- 发明人: Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
- 申请人: Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
- 申请人地址: CA Scotts Valley
- 专利权人: Seagate Technology, Inc.
- 当前专利权人: Seagate Technology, Inc.
- 当前专利权人地址: CA Scotts Valley
- 主分类号: G11B5/31
- IPC分类号: G11B5/31 ; G11B5/39 ; G11B5/40 ; C23C14/34 ; B05D5/12 ; G11B5/42
摘要:
An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
公开/授权文献
信息查询
IPC分类: