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公开(公告)号：US5554265A
公开(公告)日：1996-09-10
申请号：US421543
申请日：1995-04-13
CPC分类号： G11B5/399 , G11B5/3903 , G11B5/3967 , G11B5/313 , G11B5/40
摘要： An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
摘要翻译： 公开了具有改善的电流密度分布，降低的总体电阻和基本平坦的表面的MR传感器。 MR传感器包括具有第一和第二外部区域以及位于第一和第二外部区域之间的有源区域的MR层。 第一永磁体区域形成在第一MR层外部区域上并且限定MR层有源区域的第一边界。 第二永久磁铁区域形成在第二MR层外部区域上并且限定MR层有源区域的第二边界，使得间隙区域至少部分地位于第一和第二永磁体区域之间。 在第一和第二永磁体区域之间的MR层有源区上形成间隔层。 在有源区和隔离层中形成软相邻层，并且在一些优选实施例中还至少部分地形成在永磁体区域上。
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2.发明授权
公开(公告)号：US5495378A
公开(公告)日：1996-02-27
申请号：US380820
申请日：1995-01-30
CPC分类号： G11B5/399 , G11B5/3903 , G11B5/3967 , G11B5/313 , G11B5/40
摘要： An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
摘要翻译： 公开了具有改善的电流密度分布，降低的总体电阻和基本平坦的表面的MR传感器。 MR传感器包括具有第一和第二外部区域以及位于第一和第二外部区域之间的有源区域的MR层。 第一永磁体区域形成在第一MR层外部区域上并且限定MR层有源区域的第一边界。 第二永久磁铁区域形成在第二MR层外部区域上并且限定MR层有源区域的第二边界，使得间隙区域至少部分地位于第一和第二永磁体区域之间。 在第一和第二永磁体区域之间的MR层有源区上形成间隔层。 在有源区和隔离层中形成软相邻层，并且在一些优选实施例中还至少部分地形成在永磁体区域上。
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公开(公告)号：US4756816A
公开(公告)日：1988-07-12
申请号：US56089
申请日：1987-05-29
申请人： Simon H. Liao , Charles H. Tolman
发明人： Simon H. Liao , Charles H. Tolman
IPC分类号： C25D3/56
CPC分类号： C25D3/562 , Y10S205/922
摘要： Ferromagnetic cobalt-iron (CoFe) is electrodeposited on a conductive substrate to form a CoFe thin film. The wet electrodeposition process disclosed involves use of a relatively low toxic plating bath solution in which the constituents cobalt and iron are introduced as soluble salts. A lesser amount of iron than cobalt is used to develop an approximately 90% cobalt to 10% iron ratio in the thin film. The plating solution also has sodium saccharin, dodecyl sodium sulfate and wetting and buffering agents. The CoFe thin film that results from using the disclosed process has near zero magnetostriction, acceptable permeability for use as a magnetic head, a highly stabilized magnetic domain and approximately twice the saturation moment of Permalloy. Magnetic heads fabricated from such film are well suited for use with high coercivity media for high density recording.
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4.发明授权Magnetoresistive sensor with electrical contacts having variable resistive regions for enhanced sensor sensitivity 失效具有电触点的磁阻传感器具有可变电阻区域，以提高传感器灵敏度
公开(公告)号：US5260652A
公开(公告)日：1993-11-09
申请号：US857619
申请日：1992-03-25
摘要： A magnetoresistive sensor having a magnetization vector M and a current density vector J which form an angle of approximately 45.degree.. Magnetic flux, which enters an active region of the magnetoresistive sensor approximately perpendicular to the magnetization vector M, propagates across the active region with substantially constant length thereby producing a rectangular shaped read sensitivity function. The current density vector J is directed with electrical contacts adjacent the active region which have high resistance regions and low resistance regions.
摘要翻译： 磁阻传感器具有磁化矢量M和电流密度矢量J，其形成大约45°的角度。 进入大致垂直于磁化矢量M的磁阻传感器的有源区域的磁通以基本恒定的长度传播跨过有源区域，从而产生矩形读出灵敏度函数。 电流密度矢量J与具有高电阻区域和低电阻区域的有源区域相邻的电触点指向。
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公开(公告)号：US4821133A
公开(公告)日：1989-04-11
申请号：US152792
申请日：1988-02-05
CPC分类号： G11B5/398 , G01R33/09 , G11B5/3903
摘要： A magnetoresistive sensor element having bottleneck shaped ends. The sensor element has a highly stable, single domain central region, which eliminates Barkhausen noise.
摘要翻译： 具有瓶颈形状的磁阻传感器元件。 传感器元件具有高度稳定的单域中心区域，可消除巴克豪森噪声。
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6.发明授权Method of making inductive transducer with closed-loop pole circumscribing I-shaped pole 失效制造具有闭环极点的电感式换能器外接I形极的方法
公开(公告)号：US5598309A
公开(公告)日：1997-01-28
申请号：US438684
申请日：1995-05-11
申请人： Charles H. Tolman
发明人： Charles H. Tolman
CPC分类号： G11B5/3123 , G11B5/312 , G11B5/313 , Y10T29/49046
摘要： A magnetic pole assembly for a transducer includes a first pole piece having first and second arms joined to form front and back regions. The first and second arms are spaced between the front and back regions to form a region of low leakage-flux density. A second pole piece having front and back regions lies partly in the region of low leakage-flux density between the first and second arms of the first pole. The back region of the second pole is joined to the back region of the first pole, and the front regions of the first and second poles confront to form a gap. In one embodiment, the first and second poles are each formed of first and second portions with the first portion of the first pole and the second portion of the second pole formed in a first thin-film layer and the second portion of the first pole and the first portion of the second pole formed in a second thin-film layer spaced apart and substantially parallel to the first layer. Vias join the first and second portions of the poles together as well as the back portions of the poles. An inductive coil has a plurality of convolutions lying between the two layers, each convolution passing between the poles twice.
摘要翻译： 用于换能器的磁极组件包括第一极靴，其具有连接以形成前部区域和后部区域的第一和第二臂。 第一和第二臂在前部区域和后部区域间隔开以形成低漏磁通密度的区域。 具有前区和后区的第二极片部分地位于第一极的第一和第二臂之间的低漏磁通密度区域。 第二极的后部区域连接到第一极的后部区域，第一和第二极的前部区域形成间隙。 在一个实施例中，第一和第二极分别由第一和第二部分形成，其中第一极的第一部分和第二极的第二部分形成在第一薄膜层中，第二部分形成在第一极的第二部分 第二极的第一部分形成在间隔开并基本上平行于第一层的第二薄膜层中。 通孔连接极的第一和第二部分以及极的后部。 感应线圈具有位于两层之间的多个卷积，每个卷积在两极之间通过。
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公开(公告)号：US5170303A
公开(公告)日：1992-12-08
申请号：US516158
申请日：1990-04-30
IPC分类号： G11B5/31
CPC分类号： G11B5/3113
摘要： An inductive thin film magnetic head carried on a substrate having a reduced susceptibility to the "glitch" effect or "remote read" effect. The inductive thin film head uses a three point approach using hard axis only drive fields, narrow paddles and shortened pole tips which are spaced apart from a saw alley when the substrate is sliced.
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公开(公告)号：US06706156B1
公开(公告)日：2004-03-16
申请号：US08854407
申请日：1997-05-12
申请人： Charles H. Tolman
发明人： Charles H. Tolman
IPC分类号： C23C1434
CPC分类号： C23C14/0036
摘要： A method of making a magnetoresistance sensor which detects stored information from a medium and which provides an output voltage to a auxiliary circuitry is disclosed. The method comprises sputtering a bias layer in a sputtering gas mixture of nitrogen and argon. A spacer layer is also formed in a sputtering gas mixture of nitrogen and argon. Finally, an MR magnetic layer is formed. The spacer layer is positioned between the bias layer and the magnetic layer. The output voltage is provided to auxiliary circuitry when a current flows through the MR magnetic layer.
摘要翻译： 公开了一种制造磁阻传感器的方法，该传感器从介质检测存储的信息并向辅助电路提供输出电压。 该方法包括在氮气和氩气的溅射气体混合物中溅射偏压层。 在氮气和氩气的溅射气体混合物中也形成间隔层。 最后，形成MR磁性层。 间隔层位于偏置层和磁性层之间。 当电流流过MR磁性层时，输出电压被提供给辅助电路。
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9.发明授权MR sensors with selected resistances for the sensing and biasing layers to enhance reading capabilities 失效具有用于感测和偏置层的选定电阻的MR传感器增强读取能力
公开(公告)号：US5828528A
公开(公告)日：1998-10-27
申请号：US853262
申请日：1997-05-09
申请人： Charles H. Tolman , Lin Zhou
发明人： Charles H. Tolman , Lin Zhou
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B5/3932
摘要： A magnetoresistive sensor for detecting stored information from a magnetic medium and for providing an output voltage to auxiliary circuitry is disclosed. The magnetoresistive sensor includes a magnetoresistive magnetic layer formed from a magnetic material, the magnetic layer having a magnetization, a resistivity and a thickness. A resistance of the magnetic layer equals the resistivity of the layer divided by the thickness of the layer. The magnetic sensor also comprises a bias layer having a resistivity, a thickness and a saturation inductance. A resistance of the bias layer equals the resistivity of the layer divided by the thickness of the layer. The resistance of the bias layer is in parallel with the resistance of the magnetic layer. The saturation inductance of the bias layer helps to bias the magnetic layer from a rest position to a magnetized position. A spacer layer is positioned between the magnetic layer and the bias layer. The spacer layer has a resistivity and a thickness. A resistance of the spacer layer equals the resistivity of the layer divided by the thickness of the layer. The resistance of the spacer layer is in parallel with both the resistances of the magnetic layer and the bias layer. The parallel resistances of the bias layer and the spacer layer is at least twice as large as the resistance of the magnetic layer such that at least two-thirds of the current flows through the magnetic layer and at most one-third of the current flows through the combination of the bias layer and the spacer layer.
摘要翻译： 公开了一种磁阻传感器，用于检测来自磁介质的存储信息并向辅助电路提供输出电压。 磁阻传感器包括由磁性材料形成的磁阻磁性层，该磁性层具有磁化强度，电阻率和厚度。 磁层的电阻等于层的电阻率除以层的厚度。 磁传感器还包括具有电阻率，厚度和饱和电感的偏置层。 偏置层的电阻等于层的电阻率除以层的厚度。 偏置层的电阻与磁性层的电阻平行。 偏置层的饱和电感有助于将磁性层从静止位置偏置到磁化位置。 间隔层位于磁性层和偏置层之间。 间隔层具有电阻率和厚度。 间隔层的电阻等于层的电阻率除以层的厚度。 间隔层的电阻与磁性层和偏置层的电阻平行。 偏置层和间隔层的平行电阻至少是磁层的电阻的两倍，使得至少三分之二的电流流过磁性层，并且至多三分之一的电流流过 偏置层和间隔层的组合。
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公开(公告)号：USRE35228E
公开(公告)日：1996-05-07
申请号：US351780
申请日：1994-12-08
CPC分类号： G11B5/3113
摘要： An inductive thin film magnetic head carried on a substrate having a reduced susceptibility to the "glitch" effect or "remote read" effect. The inductive thin film head uses a three point approach using hard axis only drive fields, narrow paddles and shortened pole tips which are spaced apart from a saw alley when the substrate is sliced.
摘要翻译： 具有对“毛刺”效应或“远程读取”效应的敏感性降低的基板上的感应薄膜磁头。 感应薄膜头使用三点方式，当基片切片时，仅使用硬轴驱动场，窄桨叶和缩小的杆尖，与锯齿分隔开。
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