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    Electrodeposition of high moment cobalt iron
    1.
    发明授权
    Electrodeposition of high moment cobalt iron 失效
    高时刻钴铁电沉积

    公开(公告)号：US4756816A

    公开(公告)日：1988-07-12

    申请号：US56089

    申请日：1987-05-29

    申请人： Simon H. Liao ,  Charles H. Tolman

    发明人： Simon H. Liao ,  Charles H. Tolman

    IPC分类号： C25D3/56

    CPC分类号： C25D3/562 ,  Y10S205/922

    摘要： Ferromagnetic cobalt-iron (CoFe) is electrodeposited on a conductive substrate to form a CoFe thin film. The wet electrodeposition process disclosed involves use of a relatively low toxic plating bath solution in which the constituents cobalt and iron are introduced as soluble salts. A lesser amount of iron than cobalt is used to develop an approximately 90% cobalt to 10% iron ratio in the thin film. The plating solution also has sodium saccharin, dodecyl sodium sulfate and wetting and buffering agents. The CoFe thin film that results from using the disclosed process has near zero magnetostriction, acceptable permeability for use as a magnetic head, a highly stabilized magnetic domain and approximately twice the saturation moment of Permalloy. Magnetic heads fabricated from such film are well suited for use with high coercivity media for high density recording.

    Method of making an improved MR sensor
    2.
    发明授权
    Method of making an improved MR sensor 失效
    制造改进的MR传感器的方法

    公开(公告)号：US06706156B1

    公开(公告)日：2004-03-16

    申请号：US08854407

    申请日：1997-05-12

    申请人： Charles H. Tolman

    发明人： Charles H. Tolman

    IPC分类号： C23C1434

    CPC分类号： C23C14/0036

    摘要： A method of making a magnetoresistance sensor which detects stored information from a medium and which provides an output voltage to a auxiliary circuitry is disclosed. The method comprises sputtering a bias layer in a sputtering gas mixture of nitrogen and argon. A spacer layer is also formed in a sputtering gas mixture of nitrogen and argon. Finally, an MR magnetic layer is formed. The spacer layer is positioned between the bias layer and the magnetic layer. The output voltage is provided to auxiliary circuitry when a current flows through the MR magnetic layer.

    摘要翻译： 公开了一种制造磁阻传感器的方法，该传感器从介质检测存储的信息并向辅助电路提供输出电压。 该方法包括在氮气和氩气的溅射气体混合物中溅射偏压层。 在氮气和氩气的溅射气体混合物中也形成间隔层。 最后，形成MR磁性层。 间隔层位于偏置层和磁性层之间。 当电流流过MR磁性层时，输出电压被提供给辅助电路。

    MR sensors with selected resistances for the sensing and biasing layers to enhance reading capabilities
    3.
    发明授权
    MR sensors with selected resistances for the sensing and biasing layers to enhance reading capabilities 失效
    具有用于感测和偏置层的选定电阻的MR传感器增强读取能力

    公开(公告)号：US5828528A

    公开(公告)日：1998-10-27

    申请号：US853262

    申请日：1997-05-09

    申请人： Charles H. Tolman ,  Lin Zhou

    发明人： Charles H. Tolman ,  Lin Zhou

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  G11B5/3932

    摘要： A magnetoresistive sensor for detecting stored information from a magnetic medium and for providing an output voltage to auxiliary circuitry is disclosed. The magnetoresistive sensor includes a magnetoresistive magnetic layer formed from a magnetic material, the magnetic layer having a magnetization, a resistivity and a thickness. A resistance of the magnetic layer equals the resistivity of the layer divided by the thickness of the layer. The magnetic sensor also comprises a bias layer having a resistivity, a thickness and a saturation inductance. A resistance of the bias layer equals the resistivity of the layer divided by the thickness of the layer. The resistance of the bias layer is in parallel with the resistance of the magnetic layer. The saturation inductance of the bias layer helps to bias the magnetic layer from a rest position to a magnetized position. A spacer layer is positioned between the magnetic layer and the bias layer. The spacer layer has a resistivity and a thickness. A resistance of the spacer layer equals the resistivity of the layer divided by the thickness of the layer. The resistance of the spacer layer is in parallel with both the resistances of the magnetic layer and the bias layer. The parallel resistances of the bias layer and the spacer layer is at least twice as large as the resistance of the magnetic layer such that at least two-thirds of the current flows through the magnetic layer and at most one-third of the current flows through the combination of the bias layer and the spacer layer.

    摘要翻译： 公开了一种磁阻传感器，用于检测来自磁介质的存储信息并向辅助电路提供输出电压。 磁阻传感器包括由磁性材料形成的磁阻磁性层，该磁性层具有磁化强度，电阻率和厚度。 磁层的电阻等于层的电阻率除以层的厚度。 磁传感器还包括具有电阻率，厚度和饱和电感的偏置层。 偏置层的电阻等于层的电阻率除以层的厚度。 偏置层的电阻与磁性层的电阻平行。 偏置层的饱和电感有助于将磁性层从静止位置偏置到磁化位置。 间隔层位于磁性层和偏置层之间。 间隔层具有电阻率和厚度。 间隔层的电阻等于层的电阻率除以层的厚度。 间隔层的电阻与磁性层和偏置层的电阻平行。 偏置层和间隔层的平行电阻至少是磁层的电阻的两倍，使得至少三分之二的电流流过磁性层，并且至多三分之一的电流流过 偏置层和间隔层的组合。

    Inductive thin film head having improved readback characteristics
    4.
    再颁专利
    Inductive thin film head having improved readback characteristics 失效
    具有改善的回读特性的感光薄膜头

    公开(公告)号：USRE35228E

    公开(公告)日：1996-05-07

    申请号：US351780

    申请日：1994-12-08

    申请人： Gregory S. Mowry ,  Charles H. Tolman

    发明人： Gregory S. Mowry ,  Charles H. Tolman

    IPC分类号： G11B5/31 ,  G11B5/147

    CPC分类号： G11B5/3113

    摘要： An inductive thin film magnetic head carried on a substrate having a reduced susceptibility to the "glitch" effect or "remote read" effect. The inductive thin film head uses a three point approach using hard axis only drive fields, narrow paddles and shortened pole tips which are spaced apart from a saw alley when the substrate is sliced.

    摘要翻译： 具有对“毛刺”效应或“远程读取”效应的敏感性降低的基板上的感应薄膜磁头。 感应薄膜头使用三点方式，当基片切片时，仅使用硬轴驱动场，窄桨叶和缩小的杆尖，与锯齿分隔开。

    Magnetoresistive sensor with improved performance and processability
    5.
    发明授权
    Magnetoresistive sensor with improved performance and processability 失效
    在有源区域中具有软相邻层的永磁体稳定磁阻传感器

    公开(公告)号：US5495378A

    公开(公告)日：1996-02-27

    申请号：US380820

    申请日：1995-01-30

    申请人： Peter I. Bonyhard ,  James F. Dolejsi ,  Charles H. Tolman ,  William P. Wood

    发明人： Peter I. Bonyhard ,  James F. Dolejsi ,  Charles H. Tolman ,  William P. Wood

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40

    CPC分类号： G11B5/399 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/313 ,  G11B5/40

    摘要： An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.

    摘要翻译： 公开了具有改善的电流密度分布，降低的总体电阻和基本平坦的表面的MR传感器。 MR传感器包括具有第一和第二外部区域以及位于第一和第二外部区域之间的有源区域的MR层。 第一永磁体区域形成在第一MR层外部区域上并且限定MR层有源区域的第一边界。 第二永久磁铁区域形成在第二MR层外部区域上并且限定MR层有源区域的第二边界，使得间隙区域至少部分地位于第一和第二永磁体区域之间。 在第一和第二永磁体区域之间的MR层有源区上形成间隔层。 在有源区和隔离层中形成软相邻层，并且在一些优选实施例中还至少部分地形成在永磁体区域上。

    Magnetoresistive sensor with electrical contacts having variable resistive regions for enhanced sensor sensitivity
    6.
    发明授权
    Magnetoresistive sensor with electrical contacts having variable resistive regions for enhanced sensor sensitivity 失效
    具有电触点的磁阻传感器具有可变电阻区域，以提高传感器灵敏度

    公开(公告)号：US5260652A

    公开(公告)日：1993-11-09

    申请号：US857619

    申请日：1992-03-25

    申请人： Michael M. Collver ,  Charles H. Tolman

    发明人： Michael M. Collver ,  Charles H. Tolman

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  G01R33/06 ,  G11B5/37

    CPC分类号： G11B5/398 ,  G01R33/09 ,  G11B5/399 ,  H01L43/08

    摘要： A magnetoresistive sensor having a magnetization vector M and a current density vector J which form an angle of approximately 45.degree.. Magnetic flux, which enters an active region of the magnetoresistive sensor approximately perpendicular to the magnetization vector M, propagates across the active region with substantially constant length thereby producing a rectangular shaped read sensitivity function. The current density vector J is directed with electrical contacts adjacent the active region which have high resistance regions and low resistance regions.

    摘要翻译： 磁阻传感器具有磁化矢量M和电流密度矢量J，其形成大约45°的角度。 进入大致垂直于磁化矢量M的磁阻传感器的有源区域的磁通以基本恒定的长度传播跨过有源区域，从而产生矩形读出灵敏度函数。 电流密度矢量J与具有高电阻区域和低电阻区域的有源区域相邻的电触点指向。

    Narrow top pole of a write element
    8.
    发明授权
    Narrow top pole of a write element 有权
    写元件的窄顶极

    公开(公告)号：US06788496B2

    公开(公告)日：2004-09-07

    申请号：US09934816

    申请日：2001-08-22

    申请人： Charles H. Tolman ,  Nurul Amin

    发明人： Charles H. Tolman ,  Nurul Amin

    IPC分类号： G11B5147

    CPC分类号： G11B5/3163 ,  G11B5/3116

    摘要： In a method of manufacturing a top pole of a write element for use in a disc drive storage system, a first trench is formed on a top surface of a bottom pole, the first trench includes a first opening defined by opposing first side walls and an exposed portion of the top surface located therebetween. Next, a second trench is formed within the first trench. The second trench includes a second opening defined by opposing second side walls formed adjacent the first side walls and a gap member formed on the exposed portion of the top surface of the bottom pole between the second side walls. Finally, a top pole is formed in the second opening, which is narrower than the first opening.

    摘要翻译： 在制造用于盘驱动存储系统的写元件的顶极的方法中，第一沟槽形成在底极的顶表面上，第一沟槽包括由相对的第一侧壁限定的第一开口和 顶表面的暴露部分位于它们之间。 接下来，在第一沟槽内形成第二沟槽。 第二沟槽包括由邻近第一侧壁形成的相对的第二侧壁限定的第二开口和形成在第二侧壁之间的底极顶表面的暴露部分上的间隙构件。 最后，在比第一开口窄的第二开口中形成顶极。