发明授权
- 专利标题： Power semiconductor device
- 专利标题（中）： 功率半导体器件
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申请号： US183364申请日： 1994-01-19
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公开(公告)号： US5554862A公开(公告)日： 1996-09-10
- 发明人: Ichiro Omura , Mitsuhiko Kitagawa , Kazuya Nakayama , Masakazu Yamaguchi
- 申请人： Ichiro Omura , Mitsuhiko Kitagawa , Kazuya Nakayama , Masakazu Yamaguchi
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-105674 19920331; JPX5-007415 19930120
- 主分类号： H01L29/745
- IPC分类号： H01L29/745 ; H01L29/749 ; H01L29/74 ; H01L31/111
摘要：
In a power semiconductor device, an n-base is formed on a p-emitter layer. On the n-base layer, a p-base layer, an n-emitter layer, and a high-concentration p-layer are formed laterally. In the p-base layer, an n-source layer is formed a specified distance apart from the n-emitter layer. In the n-emitter layer, a p-source layer is formed a specified distance apart from the high-concentration p-layer. A first gate electrode is formed via a first gate insulating film on the region sandwiched by the n-source layer and the n-emitter layer. A second gate electrode is formed via a second gate insulating film on the region sandwiched by the high-concentration p-layer and the p-source layer. On the p-emitter layer, a first main electrode is formed. A second main electrode is formed so as to be in contact with the p-base layer, the n-source layer, and the p-source layer.
公开/授权文献
- US6089943A Toy 公开/授权日：2000-07-18
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