发明授权
- 专利标题: Plasma monitoring and control method and system
- 专利标题(中): 等离子体监测与控制方法及系统
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申请号: US328069申请日: 1994-10-24
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公开(公告)号: US5576629A公开(公告)日: 1996-11-19
- 发明人: Terry R. Turner , James D. Spain , John R. Swyers
- 申请人: Terry R. Turner , James D. Spain , John R. Swyers
- 申请人地址: TX Austin
- 专利权人: Fourth State Technology, Inc.
- 当前专利权人: Fourth State Technology, Inc.
- 当前专利权人地址: TX Austin
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; H01J37/32 ; H01L21/66 ; C23C14/00 ; C23C14/34 ; H01L21/306
摘要:
A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further senses the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication. The invention also provides automatic gain control features for applying necessary signal gain control functions during the end point and advanced process control operations.
公开/授权文献
- US5013409A Electrodeposition process 公开/授权日:1991-05-07