公开(公告)号：US5576629A

公开(公告)日：1996-11-19

申请号：US328069

申请日：1994-10-24

申请人： Terry R. Turner ,  James D. Spain ,  John R. Swyers

发明人： Terry R. Turner ,  James D. Spain ,  John R. Swyers

IPC分类号： C23C16/52 ,  H01J37/32 ,  H01L21/66 ,  C23C14/00 ,  C23C14/34 ,  H01L21/306

CPC分类号： H01J37/32963 ,  B24B37/013 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/3299 ,  H01L22/26 ,  H01J2237/334

摘要： A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further senses the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication. The invention also provides automatic gain control features for applying necessary signal gain control functions during the end point and advanced process control operations.

摘要翻译： 等离子体监视和控制方法以及系统通过在电子设备制造反应器的等离子体生成环境的输入处感测被引导到等离子体产生气体中的射频功率的电压来监视和控制电子设备制造反应器中的等离子体。 所述方法和系统进一步感测在等离子体产生环境的输入处的等离子体产生气体的射频功率的电流和相位角。 测量全负载阻抗并用于确定等离子体环境的特性，不仅包括放电和护套阻抗，还包括卡盘和晶片阻抗，初级接地路径阻抗和与等离子体环境相关的次级接地路径阻抗。 这允许沉积和蚀刻工艺的终点检测以及电子器件制造的先进工艺控制。 本发明还提供了用于在终点和高级过程控制操作期间应用必要的信号增益控制功能的自动增益控制特征。