发明授权
- 专利标题: Process for preparing a perovskite Bi-containing superconductor film
- 专利标题(中): 制备钙钛矿Bi超导膜的方法
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申请号: US378087申请日: 1995-01-25
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公开(公告)号: US5585332A公开(公告)日: 1996-12-17
- 发明人: Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
- 申请人: Atsushi Tanaka , Nobuo Kamehara , Koichi Niwa
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX63-301637 19881129; JPX1-114150 19890509; JPX1-144502 19890606; JPX1-144503 19890606
- 主分类号: B32B18/00
- IPC分类号: B32B18/00 ; C04B35/45 ; H01L39/24 ; B05D5/12
摘要:
A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
公开/授权文献
- US4949489A Edge-lit multiple image display device 公开/授权日:1990-08-21
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