Process for preparing a perovskite Bi-containing superconductor film
    2.
    发明授权
    Process for preparing a perovskite Bi-containing superconductor film 失效
    制备钙钛矿Bi超导膜的方法

    公开(公告)号:US5585332A

    公开(公告)日:1996-12-17

    申请号:US378087

    申请日:1995-01-25

    摘要: A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

    摘要翻译: 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 在800℃下至少沉积至少具有蒸气压大于10-4Pa的氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x)的第二材料的至少一个第二膜至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。

    Immersion cooling coolant and electronic device using this coolant
    3.
    发明授权
    Immersion cooling coolant and electronic device using this coolant 失效
    浸入式冷却液和使用这种冷却剂的电子设备

    公开(公告)号:US5349499A

    公开(公告)日:1994-09-20

    申请号:US53452

    申请日:1993-04-28

    IPC分类号: H01L23/427 H05K7/20

    CPC分类号: H01L23/427 H01L2924/0002

    摘要: A coolant for cooling a semiconductor element by direct immersion, cooling, which has an improved cooling capability, is disclosed. The coolant comprises a low boiling point fluorocarbon having a boiling point of 30.degree. C. to 100.degree. C. and a high boiling point fluorocarbon having a boiling point higher than that of the low boiling point fluorocarbon by at least 100.degree. C.; an amount of the high boiling point fluorocarbon being less than 20% by volume, based on the volume of the low boiling point fluorocarbon.

    摘要翻译: 公开了一种用于通过直接浸入,冷却来冷却半导体元件的冷却剂,其具有改进的冷却能力。 冷却剂包括沸点为30℃至100℃的低沸点碳氟化合物和沸点高于低沸点碳氟化合物的沸点至少为100℃的高沸点碳氟化合物; 基于低沸点碳氟化合物的体积,高沸点碳氟化合物的量小于20体积%。

    Process for producing Bi- and Pb-containing oxide superconducting wiring
films
    4.
    发明授权
    Process for producing Bi- and Pb-containing oxide superconducting wiring films 失效
    生产含Bi和Pb的氧化物超导布线膜的工艺

    公开(公告)号:US5312803A

    公开(公告)日:1994-05-17

    申请号:US861823

    申请日:1992-06-16

    IPC分类号: H01L39/24 B05D5/12

    摘要: In an oxide superconducting film wiring, when the line width is reduced, the evaporation of a component during firing becomes so vigorous that it becomes impossible to form a desired single crystal phase, which causes a significant lowering in the properties of the oxide superconducting wiring. This problem can be solved by preventing the evaporation of the evaporable component during the firing. Examples of this include a process wherein plate is placed above the superconductor forming material film wiring pattern on the substrate so as to face each other, the plate comprising a material having no chemical influence on the superconducting wiring, and a pattern of a material containing an evaporable component is arbitrarily formed, a process wherein a pattern having a smaller line width is sandwiched between patterns having a larger line width, and a process wherein the firing atmosphere or the concentration of the evaporable component in the pattern is varied depending upon the line width.

    摘要翻译: PCT No.PCT / JP91 / 01422 Sec。 371日期:1992年6月16日 102(e)日期1992年6月16日PCT 1991年10月17日PCT公布。 第WO92 / 07381号公报 日期:1992年04月30日。在氧化物超导膜布线中,当线宽减小时,焙烧期间的成分的蒸发变得如此剧烈,不可能形成期望的单晶相,这导致了 氧化物超导布线的性能。 这个问题可以通过防止在焙烧期间的蒸发组分的蒸发来解决。 其实例包括其中板被放置在基板上的超导体形成材料膜布线图案之上以彼此面对的方法,该板包括对超导布线不具有化学影响的材料,以及含有 可以任意地形成蒸发部件,其中具有较小线宽的图形被夹在具有较大线宽的图案之间的处理,以及其中烧制气氛或图案中的可蒸发部件的浓度根据线宽变化的处理 。

    Composition for the formation of ceramic vias
    8.
    发明授权
    Composition for the formation of ceramic vias 失效
    用于形成陶瓷通孔的组成

    公开(公告)号:US5443786A

    公开(公告)日:1995-08-22

    申请号:US700163

    申请日:1991-12-17

    摘要: A composition for the formation of vias on a ceramic substrate, the composition including (a) at least one powder containing copper, gold, silver, tungsten, molybdenum, nickel, palladium, platinum, aluminium, or an alloy thereof; and (b) 5 to 40 wt %, based on the weight of the powder in the composition, of one or more of an organosilicic compound, an organoaluminium compound, an organozirconium compound, and an organomagnesium compound. A further embodiment of a composition for the formation of vias includes (a) and (b) above and, in addition, (c) a binder material including a cellulose derivative or a heat decomposable polymethamethyl acrylate binder, and (d) a high boiling point organic solvent. The invention also includes a method for use in the formation of vias on a substrate having perforating holes therein. Such a substrate could be a glass ceramic composite substrate, an alumina substrate, a magnesia substrate, a zirconia substrate, or green sheets thereof. The holes are filled and the substrate is calcinated with the composition.

    摘要翻译: PCT No.PCT / JP90 / 01202 Sec。 371 1991年12月17日第 102(e)1991年12月17日PCT PCT 1990年9月19日PCT公布。 公开号WO91 / 04650 1991年4月4日。用于在陶瓷基材上形成通孔的组合物,所述组合物包含(a)至少一种含有铜,金,银,钨,钼,镍,钯,铂,铝或 合金; 和(b)基于组合物中粉末重量的5-40重量%的一种或多种有机硅化合物,有机铝化合物,有机锆化合物和有机镁化合物。 用于形成通孔的组合物的另一实施方案包括上述(a)和(b),另外,(c)包含纤维素衍生物或可热分解的聚甲基丙烯酸甲酯粘合剂的粘合剂材料,和(d)高沸点 有机溶剂。 本发明还包括用于在其中具有穿孔的基板上形成通孔的方法。 这样的基板可以是玻璃陶瓷复合基板,氧化铝基板,氧化镁基板,氧化锆基板或其生坯片。 填充孔,并用该组合物煅烧底物。