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    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films
    1.
    发明授权
    Process for producing Bi-Pb-Sr-Ca-Cu-O superconducting films 失效
    生产Bi-Pb-Sr-Ca-Cu-O超导薄膜的方法

    公开(公告)号：US5306702A

    公开(公告)日：1994-04-26

    申请号：US860505

    申请日：1992-06-17

    申请人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： C04B35/00 ,  C01G1/00 ,  C01G29/00 ,  C04B35/45 ,  C23C14/08 ,  C23C14/35 ,  C23C14/58 ,  H01L39/24 ,  B05D5/12 ,  C23C14/00

    CPC分类号： C23C14/5806 ,  C23C14/087 ,  C23C14/58 ,  C23C14/5853 ,  H01L39/2451 ,  Y10S505/728 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/742

    摘要： A process for producing a Bi-based perovskite superconducting film, comprising the steps of forming on a substrate a Pb-film, containing Bi-base material film comprising Bi, Pb, Sr, Ca and Cu in a Bi:Pb:Sr:Ca:Cu molar ratio of (1.9 to 2.1):(1.2 to 2.2, preferably 1.5 to 1.8):2:(1.9 to 2.2):(3 to 3.5) and sintering the Pb-containing Bi-base material film in an oxygen-containing atmosphere. The sintering step includes a main sintering period of 20 to 120 minutes, in which the temperature is raised from a first temperature to a second temperature, with the second temperature being in a range of 850.degree. to 860.degree. C., and the temperature rise in the main sintering period of 20 to 120 minutes being from 3.degree. to 10.degree. C.

    摘要翻译： PCT No.PCT / JP91 / 01423 Sec。 371日期：1992年6月17日 102（e）日期1992年6月17日PCT 1991年10月17日PCT公布。 出版物WO92 / 06923 日本1992年04月30日。一种Bi系钙钛矿超导膜的制造方法，其特征在于，在基板上形成含有Bi，Pb，Sr，Ca，Cu的Bi基材料膜的Pb膜， Bi：Pb：Sr：Ca：Cu的摩尔比为（1.9〜2.1）：1.2〜2.2，优选为1.5〜1.8）：2：（1.9〜2.2）:( 3〜3.5） 在含氧气氛中的基材膜。 烧结步骤包括20〜120分钟的主烧结期间，其中温度从第一温度升至第二温度，第二温度在850℃至860℃的范围内，温度升高 在20〜120分钟的主烧结时间为3〜10℃。

    Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films
    2.
    发明授权
    Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O Superconducting films 失效
    用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法

    公开(公告)号：US5141917A

    公开(公告)日：1992-08-25

    申请号：US565209

    申请日：1990-08-09

    申请人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： B32B18/00 ,  C04B35/45 ,  H01L39/24

    CPC分类号： C04B35/45 ,  H01L39/2422 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/742

    摘要： A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

    摘要翻译： 通过以下步骤形成具有高含量，几乎单相的高Tc相的钙钛矿型超导体膜：沉积至少一种第一材料的第一膜（例如，Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系），在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料，该第二材料包含氧化物或元素（Bi 2 O 3，Tl 2 O 3，PbO x等，特别是PbO x），其在800℃下蒸气压大于10 -4 Pa至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理，以在基板上形成钙钛矿型超导膜。 此外，确定沉积膜或叠层的优选组成。

    Process for preparing a perovskite Bi-containing superconductor film
    3.
    发明授权
    Process for preparing a perovskite Bi-containing superconductor film 失效
    制备钙钛矿Bi超导膜的方法

    公开(公告)号：US5585332A

    公开(公告)日：1996-12-17

    申请号：US378087

    申请日：1995-01-25

    申请人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Atsushi Tanaka ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： B32B18/00 ,  C04B35/45 ,  H01L39/24 ,  B05D5/12

    CPC分类号： C04B35/45 ,  H01L39/2422 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/742

    摘要： A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10.sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.

    摘要翻译： 通过以下步骤形成具有高含量，几乎单相的高Tc相的钙钛矿型超导体膜：沉积至少一种第一材料的第一膜（例如，Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系），在基板上构成钙钛矿型超导体; 在800℃下至少沉积至少具有蒸气压大于10-4Pa的氧化物或元素（Bi 2 O 3，Tl 2 O 3，PbO x等，特别是PbO x）的第二材料的至少一个第二膜至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理，以在基板上形成钙钛矿型超导膜。 此外，确定沉积膜或叠层的优选组成。

    Process for producing Bi- and Pb-containing oxide superconducting wiring films
    4.
    发明授权
    Process for producing Bi- and Pb-containing oxide superconducting wiring films 失效
    生产含Bi和Pb的氧化物超导布线膜的工艺

    公开(公告)号：US5312803A

    公开(公告)日：1994-05-17

    申请号：US861823

    申请日：1992-06-16

    申请人： Atsushi Tanaka ,  Kazunori Yamanaka ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Atsushi Tanaka ,  Kazunori Yamanaka ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： H01L39/24 ,  B05D5/12

    CPC分类号： H01L39/2464 ,  Y10S505/704 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732 ,  Y10S505/741 ,  Y10S505/742

    摘要： In an oxide superconducting film wiring, when the line width is reduced, the evaporation of a component during firing becomes so vigorous that it becomes impossible to form a desired single crystal phase, which causes a significant lowering in the properties of the oxide superconducting wiring. This problem can be solved by preventing the evaporation of the evaporable component during the firing. Examples of this include a process wherein plate is placed above the superconductor forming material film wiring pattern on the substrate so as to face each other, the plate comprising a material having no chemical influence on the superconducting wiring, and a pattern of a material containing an evaporable component is arbitrarily formed, a process wherein a pattern having a smaller line width is sandwiched between patterns having a larger line width, and a process wherein the firing atmosphere or the concentration of the evaporable component in the pattern is varied depending upon the line width.

    摘要翻译： PCT No.PCT / JP91 / 01422 Sec。 371日期：1992年6月16日 102（e）日期1992年6月16日PCT 1991年10月17日PCT公布。 第WO92 / 07381号公报 日期：1992年04月30日。在氧化物超导膜布线中，当线宽减小时，焙烧期间的成分的蒸发变得如此剧烈，不可能形成期望的单晶相，这导致了 氧化物超导布线的性能。 这个问题可以通过防止在焙烧期间的蒸发组分的蒸发来解决。 其实例包括其中板被放置在基板上的超导体形成材料膜布线图案之上以彼此面对的方法，该板包括对超导布线不具有化学影响的材料，以及含有 可以任意地形成蒸发部件，其中具有较小线宽的图形被夹在具有较大线宽的图案之间的处理，以及其中烧制气氛或图案中的可蒸发部件的浓度根据线宽变化的处理 。

    Process for forming oxide superconducting films with a plurality of metal buffer layers
    5.
    发明授权
    Process for forming oxide superconducting films with a plurality of metal buffer layers 失效
    用多个金属缓冲层形成氧化物超导膜的方法

    公开(公告)号：US5629269A

    公开(公告)日：1997-05-13

    申请号：US332479

    申请日：1994-10-31

    申请人： Kazunori Yamanaka ,  Takuya Uzumaki ,  Nobuo Kamehara ,  Koichi Niwa

    发明人： Kazunori Yamanaka ,  Takuya Uzumaki ,  Nobuo Kamehara ,  Koichi Niwa

    IPC分类号： H01L39/24 ,  B05D5/12 ,  B05D1/32

    CPC分类号： H01L39/2461 ,  Y10S505/741

    摘要： Disclosed is a process for forming a super-conducting film, which a multi-layer metal film (buffer film) is formed at a specific temperature on a ceramic substrate and a superconducting film is formed at a specific temperature on the multi-layer metal film. According to this process, a superconducting film having a high critical temperature can be formed over the ceramic substrate while controlling or suppressing the occurrence of a chemical reaction between the substrate and the superconducting film, and required superconducting performances can be manifested or exhibited.

    摘要翻译： 公开了一种用于形成超导膜的方法，其中在特定温度下在陶瓷基板上形成多层金属膜（缓冲膜），并且在特定温度下在多层金属膜上形成超导膜 。 根据该方法，可以在陶瓷基板上形成具有高临界温度的超导膜，同时控制或抑制基板与超导膜之间的化学反应的发生，并且可以显示或显示所需的超导性能。

    Process of producing multiple-layer glass-ceramic circuit board
    9.
    发明授权
    Process of producing multiple-layer glass-ceramic circuit board 失效
    生产多层玻璃陶瓷电路板的工艺

    公开(公告)号：US5287620A

    公开(公告)日：1994-02-22

    申请号：US894984

    申请日：1992-06-08

    申请人： Hitoshi Suzuki ,  Wataru Yamagishi ,  Koichi Niwa ,  Kaoru Hashimoto ,  Nobuo Kamehara

    发明人： Hitoshi Suzuki ,  Wataru Yamagishi ,  Koichi Niwa ,  Kaoru Hashimoto ,  Nobuo Kamehara

    IPC分类号： H01L23/15 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/40 ,  H05K3/46 ,  H01K3/10

    CPC分类号： H01L21/486 ,  H01L21/4867 ,  H05K3/4061 ,  H05K1/0306 ,  H05K1/092 ,  H05K2201/0266 ,  H05K2203/1126 ,  H05K2203/1476 ,  H05K3/1291 ,  H05K3/4611 ,  H05K3/4629 ,  Y10T29/49165

    摘要： A process of producing a multiple-layer glass-ceramic circuit board having a copper conductor, comprising the steps of: forming throughholes in a glass-ceramic green sheet at sites where via-contacts will be formed; filling the throughholes with a powder mixture of a copper powder blended with a ceramic powder, the copper powder and the ceramic powder having a powder particle size providing a packing density comparable with or greater than that of the glass-ceramic green sheet when filled in the throughholes; printing a conductor paste on the green sheet having the throughholes filled with the powder mixture, to form a circuit conductor pattern on the green sheet; laminating a plurality of the green sheets having the conductor pattern formed thereon, to form a laminate body; heating the laminate body to thereby remove a binder therefrom and preliminary-fire the laminate body; and firing the preliminary-fired body.

    摘要翻译： 一种制造具有铜导体的多层玻璃 - 陶瓷电路板的方法，包括以下步骤：在玻璃 - 陶瓷生片中形成通孔，该通孔将形成通孔接触点; 用与陶瓷粉末混合的铜粉末的粉末混合物填充通孔，所述铜粉末和陶瓷粉末具有提供与玻璃 - 陶瓷生片相当或更大的填充密度的粉末粒度，当填充在 通孔 在具有填充有粉末混合物的通孔的生片上印刷导体膏，以在生片上形成电路导体图案; 层叠形成有导体图案的多个生片，以形成层压体; 加热层压体，从而除去粘合剂，预热层压体; 并开火初烧机构。